Volume 5, Issue 1, February 2017, Pages: 1-6
Received: Feb. 9, 2017;
Published: Feb. 10, 2017
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Tahir Mehmood, The State Key Laboratory of Refractories and Metallurgy, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan, P. R. China
Aiman Mukhtar, The State Key Laboratory of Refractories and Metallurgy, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan, P. R. China
To understand the growth mechanism of Ag and Cu nanowires we have studied the effect of workfunction on the metal nanowire growth by XRD, SEM and Potentiostat. Under the same potential and overpotential, the metal with a smaller workfunction has a higher current density, i.e. current density for Ag is higher than of Cu nanowires. Likewise metals, the plane with smaller workfunction grows faster than with the larger workfunction, thus the preferential growth plane is (220) for both metals. We argued that the current arises from electrons tunneling from metal surface to hydrated metal and hydrogen ions. The metal with a smaller workfunction has a thinner barrier for tunneling, thus leading to a higher current density. It is found that deposition method have no such effect on the structure of deposited nanowires.
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