International Journal of Materials Science and Applications

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New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

Received: 01 May 2014    Accepted: 17 May 2014    Published: 30 May 2014
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Abstract

In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).

DOI 10.11648/j.ijmsa.20140303.15
Published in International Journal of Materials Science and Applications (Volume 3, Issue 3, May 2014)
Page(s) 100-105
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Microcrystalline Silicon, Atmospheric Adsorption Instability, Stretched-Exponential Decay, Band-Bending

References
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Author Information
  • Department of Physics, Mokpo National University, Muan, Jeonnam, Republic of Korea, 534-729

  • Department of Physics, Mokpo National University, Muan, Jeonnam, Republic of Korea, 534-729

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  • APA Style

    Tae-Hyeon Lim, Hyuk-Ryeol Park. (2014). New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. International Journal of Materials Science and Applications, 3(3), 100-105. https://doi.org/10.11648/j.ijmsa.20140303.15

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    ACS Style

    Tae-Hyeon Lim; Hyuk-Ryeol Park. New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. Int. J. Mater. Sci. Appl. 2014, 3(3), 100-105. doi: 10.11648/j.ijmsa.20140303.15

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    AMA Style

    Tae-Hyeon Lim, Hyuk-Ryeol Park. New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. Int J Mater Sci Appl. 2014;3(3):100-105. doi: 10.11648/j.ijmsa.20140303.15

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  • @article{10.11648/j.ijmsa.20140303.15,
      author = {Tae-Hyeon Lim and Hyuk-Ryeol Park},
      title = {New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films},
      journal = {International Journal of Materials Science and Applications},
      volume = {3},
      number = {3},
      pages = {100-105},
      doi = {10.11648/j.ijmsa.20140303.15},
      url = {https://doi.org/10.11648/j.ijmsa.20140303.15},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ijmsa.20140303.15},
      abstract = {In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).},
     year = {2014}
    }
    

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    T1  - New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films
    AU  - Tae-Hyeon Lim
    AU  - Hyuk-Ryeol Park
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    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
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    UR  - https://doi.org/10.11648/j.ijmsa.20140303.15
    AB  - In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).
    VL  - 3
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