Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique
International Journal of Materials Science and Applications
Volume 4, Issue 1, January 2015, Pages: 31-34
Received: Nov. 14, 2014; Accepted: Nov. 27, 2014; Published: Jan. 26, 2015
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Authors
Md. Hafijur Rahman, Department of Physics, Pabna University of Science and Technology, Pabna-6600, Bangladesh
Abu Bakar Md. Ismail, Department of Applied Physics & Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh
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Abstract
Effect of Light intensity on the I-V characteristics of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The current increases with light intensity. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.
Keywords
Porous Silicon, Passivation, Photonics, Chemical Bath Deposition (CBD), Light Intensity
To cite this article
Md. Hafijur Rahman, Abu Bakar Md. Ismail, Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique, International Journal of Materials Science and Applications. Vol. 4, No. 1, 2015, pp. 31-34. doi: 10.11648/j.ijmsa.20150401.16
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