Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique
International Journal of Materials Science and Applications
Volume 4, Issue 1, January 2015, Pages: 31-34
Received: Nov. 14, 2014; Accepted: Nov. 27, 2014; Published: Jan. 26, 2015
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Md. Hafijur Rahman, Department of Physics, Pabna University of Science and Technology, Pabna-6600, Bangladesh
Abu Bakar Md. Ismail, Department of Applied Physics & Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh
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Effect of Light intensity on the I-V characteristics of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The current increases with light intensity. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.
Porous Silicon, Passivation, Photonics, Chemical Bath Deposition (CBD), Light Intensity
To cite this article
Md. Hafijur Rahman, Abu Bakar Md. Ismail, Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique, International Journal of Materials Science and Applications. Vol. 4, No. 1, 2015, pp. 31-34. doi: 10.11648/j.ijmsa.20150401.16
T.Pilvi, E. Puukilainen, K. Arstila, M. Leskela, and M. Ritala, “ Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors” che. Vap. Deposition,14, 85-91,(2008).
Boukherroub R et al. (2000). “Thermal route for chemical modification and photoluminescence stabilization of porous silicon”, Phys. Stat. Sol. (A), 182, 117-121.
Andrea Edit Pap, Faculty of Technology, University of oulu, P.O. Box 4000, FIN-90014 University of oulu Finland.(http://herkules.oulu.fi/isbn9514277759/).
Yimin Fan, School of Materials Science and Engineering, Shanghai University Shanghai 201 800, China.
R.H. Hopkins, R.A. Hoffman, W.E. Kramer, Appl.Opt 14, (1975), 2631.
Abdul Al Mortuza, Md. Hafijur Rahman, Sinthia Shabnam Mou, Md. JulkarNain and Abu Bakar Md. Ismail, "Passivation of Porous Silicon by LaF3 Using a Simple Single-Source Chemical Bath Technique", International Journal of Materials and Chemistry, Vol.2, No.4, August 2012, pp 111-115 .
A. Halimaoui ‘Porous silicon formation by anodisation’. In: Properties of porous silicon, ed. by L.T. Chanham (IEE INSPEC, The Institution of Electrical Engineers, London) (1997) 12-13.
Patnaik P (2002). “Handbook of Inorganic Chemicals”, McGraw-Hill Professional, New York. 448.
Herino R (2000). “Nanocomposite materials from porous silicon”, Mater. Sc. Eng. B, 69–70, 70–76.
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