International Journal of Materials Science and Applications

| Peer-Reviewed |

AgInSe2 Thin Films Prepared by Electrodeposition Process

Received: 29 November 2014    Accepted: 14 December 2014    Published: 26 January 2015
Views:       Downloads:

Share This Article

Abstract

In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO3, 6x10-2 M InCl3 and 3x10-2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.

DOI 10.11648/j.ijmsa.20150401.17
Published in International Journal of Materials Science and Applications (Volume 4, Issue 1, January 2015)
Page(s) 35-38
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Thin Films, Electrodeposition, AgInSe2, Physical Properties

References
[1] M.A. Contreras, M.J. Romero, “Characterization of Cu(In,Ga)Se2 materials used in record performance solar cells”, Thin Solid Films 511-512 (2006) 51-54
[2] C.M. Joseph, C.S. Menon, “Electrical conductivity, optical absorption and structural studies in AgInSe2 thin films”, Semicond. Sci. Technol. 11 (1996) 1668-1671.
[3] M.C. Santhosh Kumar and B. Pradeep, “Effect of H+ irradiation on the optical properties of vacuum evaporated AgInSe2 thin films”, Appl. Surf. Sci. 255 (2009) 8324-8327.
[4] P. Ramesh, O.O. Hussain, S. Uthanna, B.S. Naidu, P.J. Reddy, “Photovoltaic performance of p-AgInSe2/n-CdS thin film heterojunctions”, Mater. Letters 34 (1998) 217-221.
[5] K. Yamada, N. Hoshino, T. Nakada, “Crystallographic and electrical properties of wide gap Ag(In1−x,Gax)Se2 thin films and solar cells”, Sci. Technol. Adv. Mater. 7 (2006) 42-45.
[6] P.P. Ramesh, O.Md. Hussain, S. Uthanna, B.S. Naidu, P.J. Reddy, “Characterization of p-AglnSe2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions” Mat; Sci. Eng. B, 49 (1997) 27-30.
[7] G.V. Rao, G.H. Chandra, O.M. Hussain, S. Uthama, B.S. Naidu, “Characteristics of Al/p-Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes”, Cryst. Res. Technol. 36 (2001) 571-576.
[8] P. Ramesh, S. Uthanna, B.S. Naidu, P.J. Reddy, “Characteristics of Ni/n-AgInSe2 polycrystalline thin film Schottky barrier diodes”, Thin Solid Films 292 (1997) 290-292.
[9] Y. Jin, K. Tang, C. An, L. Huang, “Hydrothermal synthesis and characterization of AgInSe2 nanorods”, J. Cryst. Growth 253 (2003) 429-434.
[10] J.J. Lee, J.D. Lee, B.Y. Ahn, H.S. Kim, K.H. Kim, “Structural and Optical Properties of AgInSe2 Films Prepared on Indium Tin Oxide Substrates”, J. Kor. Phys. Soc. 50 (2007) 1099-1103.
[11] H. Matsmo, K. Yoshino, T. Ikari, “Preparation of AgInSe2 thin films grown by vacuum evaporation method”, physica status solidi (c) 3 (2006) 2644-2647.
[12] C.A. Arredondo, G. Gordillo, “Photoconductive and electrical transport properties of AgInSe2 thin films prepared by co-evaporation”, Phys. B: Cond. Matter 405 (2010) 3694-3699.
[13] H. Mustafa, D. Hunter, A.K. Pradhan, U.N. Roy, Y. Cui, A. Burger, “Synthesis and characterization of AgInSe2 for application in thin film solar cells”, Thin Solid Films 515 (2007) 7001-7004.
[14] I.V. Bodnar, “Properties of AgGaxIn1–xSe2 Solid Solutions”, Inorg. Mater. 40 (2004) 914-918.
[15] K. Yoshino, N. Mitani, M. Sugiyama, S.F. Chichibu, H. Komaki, T. Ikari, “Optical and electrical properties of AgIn(SSe)2 crystals”, Phys. B: Cond. Matter 302-303 (2001) 349-356.
[16] J.W. Lekse, A.M. Pischera, J.A. Aitken, “Understanding solid-state microwave synthesis using the diamond-like semiconductor, AgInSe2, as a case study”, Mater. Res. Bull. 42 (2007) 395-403.
[17] E. Tzvetkova, V. Stratieva, M. Ganchev, I. Tomov, K. Ivanova, K. Kochev, “Preparation and structure of annealed CuInSe2 electrodeposited films”, Thin Solid Films 311 (1997) 101-106.
[18] H. Cesiulis, M. Ziomek-Moroz, “Electrocrystallization and electrodeposition of silver on titanium nitride”, J. Appl. Electrochem. 30 (2000) 1261-1268.
[19] R. Diaz, G. S. Vicente, J.M. Merino, F. Rueda, P. Ocon, P. Herrasti, “Simultaneous electrodeposition of Cu–In–Se–Te thin films”, J. Mater. Chem. 10 (2000) 1623-1627.
[20] Y. Ueno, Y. Kojima, T. Sugiura, H. Minoura, “Electrodeposition of AgInSe2 films from a sulphate bath”, Thin Solid Films 189 (1990) 91-101.
[21] G.E. Delgado, A.J. Mora, T. Tinoco, C. Pineda, “Crystal structure study of the semiconducting system Ag-In-X (X = S, Se, Te) by X-ray powder diffraction”, 9th European Powder Diffraction Conference (EPDIC-9), Praha, Czech Republic, 2-5 Sept. (2004).
[22] A.H. Ammar, A.M. Farid, M.A.M. Seyam, “Heat treatment effect on the structural and optical properties of AgInSe2 thin films”, Vacuum 66 (2002) 27-38.
[23] P. Scherrer, “Bestimmung der Größe und der inneren Struktur von Kolloidteilchen mittels Röntgenstrahlen”, Nachrichten von der Gesellschaft der Wissenschaften zu Göttingen 2 (1918) 98-100.
[24] G.V. Rao, G.H. Chandra, P.S. Reddy, O.M. Hussain, K.T. Ramakrishma, S.J. Uthanna, “Influence of substrate temperature on the structural and optical properties of Cu0.5Ag0.5InSe2 films”, J. Optoelectron. Adv. Mater. 4 (2002) 387-392.
[25] S. Murugan, K.R. Murali, “Structural, Optical, and Electrical Studies on Pulse Plated AgInSe Films”, Acta Phys. Polon. A 126 (2014) 727-731.
[26] D. Pathak, T. Wagner, J. Šubrt, J. Kupcik "Characterization of mechanically synthesized AgInSe2 nanostructures", Canad. J. Phys. 92 (2014) 789-796.
[27] M. A. Abdullaev, A. B. Alhasov, D. Kh. Magomedova, Fabrication and Properties of CuInSe2/AgInSe2/CdS Double Heterojunction Cascade Solar Cells", Inorg. Mater. 50 (2014) 228–232.
Author Information
  • Laboratoire de Physique des Matériaux, Université Mohammed V, B.P. 1014, Rabat, Morocco

  • Departamento de Física Aplicada C-XII, Universidad Autónoma de Madrid, Madrid, Spain

  • Equipe Batteries Lithium et Dép?ts Electrolytiques, Faculté des Sciences, B.P. 1014, Rabat, Morocco

  • Apartado Postal 20, 52176, Metepec 3, Estado de México, México

  • Laboratoire de Physique des Matériaux, Université Mohammed V, B.P. 1014, Rabat, Morocco

Cite This Article
  • APA Style

    Mounir Ait Aouaj, Raquel Diaz, Fouzia Cherkaoui El Moursli, Arturo Tiburcio-Silver, Mohammed Abd-Lefdil. (2015). AgInSe2 Thin Films Prepared by Electrodeposition Process. International Journal of Materials Science and Applications, 4(1), 35-38. https://doi.org/10.11648/j.ijmsa.20150401.17

    Copy | Download

    ACS Style

    Mounir Ait Aouaj; Raquel Diaz; Fouzia Cherkaoui El Moursli; Arturo Tiburcio-Silver; Mohammed Abd-Lefdil. AgInSe2 Thin Films Prepared by Electrodeposition Process. Int. J. Mater. Sci. Appl. 2015, 4(1), 35-38. doi: 10.11648/j.ijmsa.20150401.17

    Copy | Download

    AMA Style

    Mounir Ait Aouaj, Raquel Diaz, Fouzia Cherkaoui El Moursli, Arturo Tiburcio-Silver, Mohammed Abd-Lefdil. AgInSe2 Thin Films Prepared by Electrodeposition Process. Int J Mater Sci Appl. 2015;4(1):35-38. doi: 10.11648/j.ijmsa.20150401.17

    Copy | Download

  • @article{10.11648/j.ijmsa.20150401.17,
      author = {Mounir Ait Aouaj and Raquel Diaz and Fouzia Cherkaoui El Moursli and Arturo Tiburcio-Silver and Mohammed Abd-Lefdil},
      title = {AgInSe2 Thin Films Prepared by Electrodeposition Process},
      journal = {International Journal of Materials Science and Applications},
      volume = {4},
      number = {1},
      pages = {35-38},
      doi = {10.11648/j.ijmsa.20150401.17},
      url = {https://doi.org/10.11648/j.ijmsa.20150401.17},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ijmsa.20150401.17},
      abstract = {In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO3, 6x10-2 M InCl3 and 3x10-2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.},
     year = {2015}
    }
    

    Copy | Download

  • TY  - JOUR
    T1  - AgInSe2 Thin Films Prepared by Electrodeposition Process
    AU  - Mounir Ait Aouaj
    AU  - Raquel Diaz
    AU  - Fouzia Cherkaoui El Moursli
    AU  - Arturo Tiburcio-Silver
    AU  - Mohammed Abd-Lefdil
    Y1  - 2015/01/26
    PY  - 2015
    N1  - https://doi.org/10.11648/j.ijmsa.20150401.17
    DO  - 10.11648/j.ijmsa.20150401.17
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 35
    EP  - 38
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20150401.17
    AB  - In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO3, 6x10-2 M InCl3 and 3x10-2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.
    VL  - 4
    IS  - 1
    ER  - 

    Copy | Download

  • Sections