This paper reports the study on structural, morphology and optical properties of electrodeposited tin disulphide (SnS2) thin films. The thin films were synthesise from SnSO4, Na2S2O3 and H2SO4 and were deposited on Indium tin oxide coated glass slide. The films were characterized using X-Ray Diffractometer (XRD), SEM-EDS, AFM and UV-Visible spectrophotometer in the visible region. The EDS shows the presence of Sn and S. The SEM result reveals that, the film is continuous, pin-hole and crack free. The grain size of 0.31 µm was calculated for the film. The XRD result reveals the films to be crystalized with hexagonal structure and lattice parameters a=b= 3.645 Å and c = 11.802 Å. The crystal size was estimated to be 52.3 nm and inter-planar spacing was estimated to be 0.5 nm. The AFM confirms the film to be continuous, pin-hole and crack free. The average growth height of the film is estimated to be 90.5 nm. The transmittance of the films is about 78% and is a direct band gap material with band gap energy of 2.8 eV. Thus, the film can be used as a buffer layer in thin film solar cells and other optoelectronic devices.
| Published in | International Journal of Materials Science and Applications (Volume 5, Issue 5) |
| DOI | 10.11648/j.ijmsa.20160505.12 |
| Page(s) | 188-193 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2024. Published by Science Publishing Group |
Tin Disulphide, Thin Films, Electrodeposited, Structural and Optical Properties
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APA Style
A. Ramoni Lasisi, Olayinka. A. Babalola, Bidini. A. Taleatu, Aderemi. B. Alabi, Ezekiel Omotoso, et al. (2016). Synthesis and Characterization of Electrodeposited Tin Disulphide (SnS2) Thin Films for Photovoltaic Application. International Journal of Materials Science and Applications, 5(5), 188-193. https://doi.org/10.11648/j.ijmsa.20160505.12
ACS Style
A. Ramoni Lasisi; Olayinka. A. Babalola; Bidini. A. Taleatu; Aderemi. B. Alabi; Ezekiel Omotoso, et al. Synthesis and Characterization of Electrodeposited Tin Disulphide (SnS2) Thin Films for Photovoltaic Application. Int. J. Mater. Sci. Appl. 2016, 5(5), 188-193. doi: 10.11648/j.ijmsa.20160505.12
AMA Style
A. Ramoni Lasisi, Olayinka. A. Babalola, Bidini. A. Taleatu, Aderemi. B. Alabi, Ezekiel Omotoso, et al. Synthesis and Characterization of Electrodeposited Tin Disulphide (SnS2) Thin Films for Photovoltaic Application. Int J Mater Sci Appl. 2016;5(5):188-193. doi: 10.11648/j.ijmsa.20160505.12
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author = {A. Ramoni Lasisi and Olayinka. A. Babalola and Bidini. A. Taleatu and Aderemi. B. Alabi and Ezekiel Omotoso and Taye Akomolafe},
title = {Synthesis and Characterization of Electrodeposited Tin Disulphide (SnS2) Thin Films for Photovoltaic Application},
journal = {International Journal of Materials Science and Applications},
volume = {5},
number = {5},
pages = {188-193},
doi = {10.11648/j.ijmsa.20160505.12},
url = {https://doi.org/10.11648/j.ijmsa.20160505.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160505.12},
abstract = {This paper reports the study on structural, morphology and optical properties of electrodeposited tin disulphide (SnS2) thin films. The thin films were synthesise from SnSO4, Na2S2O3 and H2SO4 and were deposited on Indium tin oxide coated glass slide. The films were characterized using X-Ray Diffractometer (XRD), SEM-EDS, AFM and UV-Visible spectrophotometer in the visible region. The EDS shows the presence of Sn and S. The SEM result reveals that, the film is continuous, pin-hole and crack free. The grain size of 0.31 µm was calculated for the film. The XRD result reveals the films to be crystalized with hexagonal structure and lattice parameters a=b= 3.645 Å and c = 11.802 Å. The crystal size was estimated to be 52.3 nm and inter-planar spacing was estimated to be 0.5 nm. The AFM confirms the film to be continuous, pin-hole and crack free. The average growth height of the film is estimated to be 90.5 nm. The transmittance of the films is about 78% and is a direct band gap material with band gap energy of 2.8 eV. Thus, the film can be used as a buffer layer in thin film solar cells and other optoelectronic devices.},
year = {2016}
}
TY - JOUR T1 - Synthesis and Characterization of Electrodeposited Tin Disulphide (SnS2) Thin Films for Photovoltaic Application AU - A. Ramoni Lasisi AU - Olayinka. A. Babalola AU - Bidini. A. Taleatu AU - Aderemi. B. Alabi AU - Ezekiel Omotoso AU - Taye Akomolafe Y1 - 2016/09/05 PY - 2016 N1 - https://doi.org/10.11648/j.ijmsa.20160505.12 DO - 10.11648/j.ijmsa.20160505.12 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 188 EP - 193 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20160505.12 AB - This paper reports the study on structural, morphology and optical properties of electrodeposited tin disulphide (SnS2) thin films. The thin films were synthesise from SnSO4, Na2S2O3 and H2SO4 and were deposited on Indium tin oxide coated glass slide. The films were characterized using X-Ray Diffractometer (XRD), SEM-EDS, AFM and UV-Visible spectrophotometer in the visible region. The EDS shows the presence of Sn and S. The SEM result reveals that, the film is continuous, pin-hole and crack free. The grain size of 0.31 µm was calculated for the film. The XRD result reveals the films to be crystalized with hexagonal structure and lattice parameters a=b= 3.645 Å and c = 11.802 Å. The crystal size was estimated to be 52.3 nm and inter-planar spacing was estimated to be 0.5 nm. The AFM confirms the film to be continuous, pin-hole and crack free. The average growth height of the film is estimated to be 90.5 nm. The transmittance of the films is about 78% and is a direct band gap material with band gap energy of 2.8 eV. Thus, the film can be used as a buffer layer in thin film solar cells and other optoelectronic devices. VL - 5 IS - 5 ER -
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