In the present work, a systematic investigation of crystallization kinetics of In60Se40 alloy has been made. Thin films of In60Se40 alloy were prepared by thermal evaporation using Edward Auto 306 evaporation system. Electrical measurements at room temperature and upon annealing at different heating rates were done by four point probe method using Keithley 2400 source meter interfaced with computer using Lab View software. The dependence of sheet resistance on temperature showed a sudden drop in resistance at a specific temperature corresponding to the transition temperature at which the alloy change from amorphous to crystalline. The transition temperature was also found to increase with the heating rates. From the heating rate dependence of peak crystallization temperature (Tp) the activation energy for crystallization was determined using the Kissinger analysis. The films were found to have an electrical contrast of about six orders of magnitude between the as-deposited and the annealed states, a good quality for PRAM applications. The activation energies were determined to be 0.354 ± 0.018 eV.
| Published in | Advances in Materials (Volume 5, Issue 4) |
| DOI | 10.11648/j.am.20160504.11 |
| Page(s) | 18-22 |
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Chalcogenide Materials, Phase Change Memory, Crystallization Temperature, Transition Temperature
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APA Style
Irene W. Muchira, Walter K. Njoroge, Patrick M. Karimi. (2016). Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications. Advances in Materials, 5(4), 18-22. https://doi.org/10.11648/j.am.20160504.11
ACS Style
Irene W. Muchira; Walter K. Njoroge; Patrick M. Karimi. Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications. Adv. Mater. 2016, 5(4), 18-22. doi: 10.11648/j.am.20160504.11
AMA Style
Irene W. Muchira, Walter K. Njoroge, Patrick M. Karimi. Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications. Adv Mater. 2016;5(4):18-22. doi: 10.11648/j.am.20160504.11
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Download@article{10.11648/j.am.20160504.11,
author = {Irene W. Muchira and Walter K. Njoroge and Patrick M. Karimi},
title = {Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications},
journal = {Advances in Materials},
volume = {5},
number = {4},
pages = {18-22},
doi = {10.11648/j.am.20160504.11},
url = {https://doi.org/10.11648/j.am.20160504.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20160504.11},
abstract = {In the present work, a systematic investigation of crystallization kinetics of In60Se40 alloy has been made. Thin films of In60Se40 alloy were prepared by thermal evaporation using Edward Auto 306 evaporation system. Electrical measurements at room temperature and upon annealing at different heating rates were done by four point probe method using Keithley 2400 source meter interfaced with computer using Lab View software. The dependence of sheet resistance on temperature showed a sudden drop in resistance at a specific temperature corresponding to the transition temperature at which the alloy change from amorphous to crystalline. The transition temperature was also found to increase with the heating rates. From the heating rate dependence of peak crystallization temperature (Tp) the activation energy for crystallization was determined using the Kissinger analysis. The films were found to have an electrical contrast of about six orders of magnitude between the as-deposited and the annealed states, a good quality for PRAM applications. The activation energies were determined to be 0.354 ± 0.018 eV.},
year = {2016}
}
TY - JOUR T1 - Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications AU - Irene W. Muchira AU - Walter K. Njoroge AU - Patrick M. Karimi Y1 - 2016/07/28 PY - 2016 N1 - https://doi.org/10.11648/j.am.20160504.11 DO - 10.11648/j.am.20160504.11 T2 - Advances in Materials JF - Advances in Materials JO - Advances in Materials SP - 18 EP - 22 PB - Science Publishing Group SN - 2327-252X UR - https://doi.org/10.11648/j.am.20160504.11 AB - In the present work, a systematic investigation of crystallization kinetics of In60Se40 alloy has been made. Thin films of In60Se40 alloy were prepared by thermal evaporation using Edward Auto 306 evaporation system. Electrical measurements at room temperature and upon annealing at different heating rates were done by four point probe method using Keithley 2400 source meter interfaced with computer using Lab View software. The dependence of sheet resistance on temperature showed a sudden drop in resistance at a specific temperature corresponding to the transition temperature at which the alloy change from amorphous to crystalline. The transition temperature was also found to increase with the heating rates. From the heating rate dependence of peak crystallization temperature (Tp) the activation energy for crystallization was determined using the Kissinger analysis. The films were found to have an electrical contrast of about six orders of magnitude between the as-deposited and the annealed states, a good quality for PRAM applications. The activation energies were determined to be 0.354 ± 0.018 eV. VL - 5 IS - 4 ER -
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