Analysis of Series-Connected IGBTs Protection Method under Short Circuit II
Journal of Electrical and Electronic Engineering
Volume 4, Issue 5, October 2016, Pages: 139-144
Received: Nov. 22, 2016;
Published: Nov. 24, 2016
Views 4018 Downloads 121
Mei Guifang, Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Xu Guancheng, Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Lv Miao, Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Lang Xuebin, Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Dong Xiaoshuai, Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Yang Xinran, Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Follow on us
The difference between single and series-connected insulated gate bipolar transistor (IGBTs) during short circuit II (SC II) is analyzed contrastively, and requirements for an improved protection have been advanced to solve the SC II problem of series-connected IGBTs. A new principle of short circuit protection based on the logic of SC II fault processing used by the main control unit was proposed, using an active voltage clamping circuit to balance the dynamic voltage during breakdown, using an RC circuit to balance the voltage during tail current stage, and a formula to estimate the absorption capacitance and the selection principle of static voltage balancing resistance was proposed. The parameters under the actual test condition was given, the short circuit test system of series-connected IGBTs established, and the experimental verification carried out under the actual conditions. The result shows that under a Vbus of 1400V (2.65kV maximum peak voltage for each IGBT), the new protection method can provide synchronization of protect operation and voltage balancing during turning-off process, and the unbalance of steady stage voltage is under 5%.
Series-Connected IGBTs, Short Circuit in Series, SC II, Fault Detection, Voltage-Balancing in Fault
To cite this article
Analysis of Series-Connected IGBTs Protection Method under Short Circuit II, Journal of Electrical and Electronic Engineering.
Vol. 4, No. 5,
2016, pp. 139-144.
ZHANG Fan, YANG Xu, REN Yu, CHEN Ying, GOU Ruifeng. Voltage Balancing Circuit for Series-connected IGBTs in Solid-state Breaker [J]. Proceedings of the CSEE, 2016, 36(3): 656-663.
ZHAOF Dong-yuan, LIU Jiang. Application Analysis of the Press-pack IGBT in the Power Electronic Field [J]. Power Electronics. 2015, 49(12): 46-48.
Dou Zechun, Rupert Stevens, Xin Lanyuan, et al. Design and characteristic analysis of novel press-contact IGBT module [J]. Electric Drive for Locomtives, 2013, 1(01): 10-13.
FENG LEI, GOU Ruifeng, ZHUO Fang. Development of 10 kV Solid State DC Breaker Based on IGBT Series-connected Technique [J]. SOUTHERN POWER SYSTEM TECHNOLOGY. 2016, 10(4): 43-49.
Nakatake H, Iwata A. Series connection of IGBTs used multilevel clamp circuit and turn off timing adjustment circuit [C]. Proceedings of IEEE 34th Annual Power Electronics Specialist Conference, 2003, 4: 1910-1915.
LUTing, Zhao Zhengming, JiShiqi, et al. Active clamping circuit with status feedback for series-connected HV-IGBTs [J]. IEEE Transactions on Industry Applications, 2014, 50(5): 3579-3590.
YU Hualong, LU Ting, JI Shiqi, YUAN Liqiang, ZHAO Zhengming. Active Clamping Circuit Threshold Voltage Design for Series-connected HVIGBTs [J]. Proceedings of the CSEE, 2016, 36(5):1357-1365.
Zhang Bingjing. Research on the unbalancing dynamic voltage of Serial Press-contact IGBT [D]. North China Electric Power University, 2014.03.
Xingyu Li. The Research of Series Connected Diode Clamping IGBT Equalizing [D]. Beijing Institute of Technology, 2016. 01.
Liu Zhouzhou, Tong Xiangqian. Analysis of short circuit protection mechanism of high power IGBT device [J]. Electric drive, 2015, 45(3): 77-80.
Yao Wenhai, Cheng Shanmei, Sun Dejin. Soft turn-off short circuit protection strategy applied to high power IGBT module [J]. Electric drive, 2015, 45(3): 77-80.
Lutz J, Dobler R, Mari J, et al. Short circuit III in high power IGBTs [C]. Proceeding of the EPE 13th European conference, 2009: 1-8.
PANG Hui, WEN Jialiang, HE Zhiyuan, et al. Unbalancing Voltage of High Power Series Connected IGBT Valve [J]. Proceeding of the CSEE, 2011, 31(21): 1-8.
Yao Wenhai, Cheng Shanmei, Li Wujie, et al. Short-circuit strategy of IGBT based on di/dt and voltage combination detection [J]. Power Electronics, 2013, 47(12): 57-59.
WEI Feng, LI Li. Short-circuit Features of High Voltage IGBT in di/dt Buffer Circuit [J]. The World of Power Supply, 2013, 06: 32-35.