Impact of Electron-Beam Radiation on Electrical Properties of Pb1-xMnxTe Epitaxial Films
Nuclear Science
Volume 1, Issue 1, December 2016, Pages: 1-5
Received: Nov. 1, 2016; Accepted: Nov. 14, 2016; Published: Dec. 17, 2016
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M. A. Mehrabova, Institute of Radiation Problems of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
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It has been obtained Pb1-xMnxTe (x=0.04) epitaxial films on BaF2 substrates at 10-4Pa vacuum by molecular beam condensation method and studied the impact of electron-beam radiation on their electrical properties. From temperature dependence curves of electrical conductivity it has been determined that the electrical conductivity decreases with an increase of Mn concentration. İnfluence of electron flux Ф=2·1015см-2 (E=4.5MeV,) leads to a decrease of electrical conductivity due to the compensation of local level, further increase of radiation dose up to Ф=1016см-2 increases the electrical conductivity. It has been investigated the impact of electron-beam radiation on VAC.
Semimagnetic Semiconductor, Thin Film, Epitaxial Film, Substrate, VAC, Electrical Conductivity, Electron-Beam Radiation
To cite this article
M. A. Mehrabova, Impact of Electron-Beam Radiation on Electrical Properties of Pb1-xMnxTe Epitaxial Films, Nuclear Science. Vol. 1, No. 1, 2016, pp. 1-5. doi: 10.11648/j.ns.20160101.11
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