As a virtual experimental device for research and the modelling of grown-in microdefects formation in dislocation-free silicon single crystals the software is proposed. The software is built on the basis on diffusion model of grown-in microdefects formation and allows the use of computer to investigate the defect structure of silicon monocrystals with a diameter up to 400 mm.
| Published in | Engineering and Applied Sciences (Volume 3, Issue 1) |
| DOI | 10.11648/j.eas.20180301.11 |
| Page(s) | 1-5 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
Silicon, Grown-in Microdefects, Diffusion Model, Software
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APA Style
Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko. (2018). The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals. Engineering and Applied Sciences, 3(1), 1-5. https://doi.org/10.11648/j.eas.20180301.11
ACS Style
Vitalyi Igorevich Talanin; Igor Evgenievich Talanin; Vladislav Igorevich Lashko. The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals. Eng. Appl. Sci. 2018, 3(1), 1-5. doi: 10.11648/j.eas.20180301.11
AMA Style
Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko. The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals. Eng Appl Sci. 2018;3(1):1-5. doi: 10.11648/j.eas.20180301.11
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Download@article{10.11648/j.eas.20180301.11,
author = {Vitalyi Igorevich Talanin and Igor Evgenievich Talanin and Vladislav Igorevich Lashko},
title = {The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals},
journal = {Engineering and Applied Sciences},
volume = {3},
number = {1},
pages = {1-5},
doi = {10.11648/j.eas.20180301.11},
url = {https://doi.org/10.11648/j.eas.20180301.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.eas.20180301.11},
abstract = {As a virtual experimental device for research and the modelling of grown-in microdefects formation in dislocation-free silicon single crystals the software is proposed. The software is built on the basis on diffusion model of grown-in microdefects formation and allows the use of computer to investigate the defect structure of silicon monocrystals with a diameter up to 400 mm.},
year = {2018}
}
TY - JOUR T1 - The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals AU - Vitalyi Igorevich Talanin AU - Igor Evgenievich Talanin AU - Vladislav Igorevich Lashko Y1 - 2018/01/11 PY - 2018 N1 - https://doi.org/10.11648/j.eas.20180301.11 DO - 10.11648/j.eas.20180301.11 T2 - Engineering and Applied Sciences JF - Engineering and Applied Sciences JO - Engineering and Applied Sciences SP - 1 EP - 5 PB - Science Publishing Group SN - 2575-1468 UR - https://doi.org/10.11648/j.eas.20180301.11 AB - As a virtual experimental device for research and the modelling of grown-in microdefects formation in dislocation-free silicon single crystals the software is proposed. The software is built on the basis on diffusion model of grown-in microdefects formation and allows the use of computer to investigate the defect structure of silicon monocrystals with a diameter up to 400 mm. VL - 3 IS - 1 ER -
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