Investigation of Positron Annihilation Diffusion Length in Gallium Nitride
American Journal of Modern Physics
Volume 3, Issue 1, January 2014, Pages: 24-28
Received: Dec. 12, 2013; Published: Jan. 10, 2014
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Authors
Abdulnasser Sagr Saleh, Physics department, Faculty of Science, University of Benghazi, Benghazi, Libya
Awla Moftah Elhasi, Physics department, Faculty of Science, University of Benghazi, Benghazi, Libya
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Abstract
A number of authors reported values for positron diffusion length in Gallium nitride less than 60 nm where the expected values in semiconductors are in the range of 200 nm to 300 nm. As these values are usually obtained from fitting a theoretical diffusion model to experimental Doppler broadening results, a possibility of fitting errors exist. In this study, positron annihilation experimental results for two MBE Gallium nitride samples are used to determine diffusion length. Several models are examined and fitted to the data in order to find reasons behind such short values. The study concluded to rule out errors in theoretical fittings, confirmed the shortness and owed the shortness to trapping of positrons by line defects which have high density in this material.
Keywords
Gallium Nitride, Diffusion Length, Defects, Positron Annihilation
To cite this article
Abdulnasser Sagr Saleh, Awla Moftah Elhasi, Investigation of Positron Annihilation Diffusion Length in Gallium Nitride, American Journal of Modern Physics. Vol. 3, No. 1, 2014, pp. 24-28. doi: 10.11648/j.ajmp.20140301.15
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