Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals
American Journal of Modern Physics
Volume 4, Issue 3-1, May 2015, Pages: 48-52
Received: Apr. 29, 2015;
Accepted: May 11, 2015;
Published: May 16, 2015
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Hamid Shafeghat, Department of Physics, Payame Noor University, Tehran, Iran
Alireza Abbasnia, Department of Physics, Payame Noor University, Tehran, Iran
Saeed Mohammadi, Department of Physics, Payame Noor University, Tehran, Iran
Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in crystals is investigated.
Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals, American Journal of Modern Physics. Special Issue: Many Particle Simulations.
Vol. 4, No. 3-1,
2015, pp. 48-52.
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