Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals
American Journal of Modern Physics
Volume 4, Issue 3-1, May 2015, Pages: 48-52
Received: Apr. 29, 2015; Accepted: May 11, 2015; Published: May 16, 2015
Views 3928      Downloads 79
Authors
Hamid Shafeghat, Department of Physics, Payame Noor University, Tehran, Iran
Alireza Abbasnia, Department of Physics, Payame Noor University, Tehran, Iran
Saeed Mohammadi, Department of Physics, Payame Noor University, Tehran, Iran
Article Tools
Follow on us
Abstract
Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in crystals is investigated.
Keywords
Channeling Radiation, Fokker-Planck Equation, Dechanneling, Radiation Spectra
To cite this article
Hamid Shafeghat, Alireza Abbasnia, Saeed Mohammadi, Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals, American Journal of Modern Physics. Special Issue:Many Particle Simulations. Vol. 4, No. 3-1, 2015, pp. 48-52. doi: 10.11648/j.ajmp.s.2015040301.21
References
[1]
Carrigan R. A., Negative Particle Planar and Axial Channeling and Channeling Collimation, in the book "Charged and Neutral Particles ChannelingPheno mena- Channeling 2008", Dabagov S.B., and Pa lumbo L., Eds., World Scientific Publ. (2010) 129.
[2]
DabagovS.B., and ZhevagoN.K., NuovoCimento 31(9)(2008) 491.
[3]
Kumakhov M.A., and Shirmer G., Atomic Collisions in Crystals, Moscow: Atomizdat, 1980 (in Russian).
[4]
BeloshitskyVV, KomarovFF, and Kumakhov MA, Dechanneling, flux-peaking and energy losses of fast charged particles penetrating through thick crystals, Phys. Rep. 139 (6)(1986) 293-364.
[5]
Kostyuk A., Korol A., Solov’yovA.and Greiner W., J. Phys. B: At. Mol. Opt. Phys. 44(2011) 075208.
[6]
Ohtsuki Y.-H., Charged Beam Interaction With Solids, New York, 1983.
[7]
BackeH.et al. Nucl. Instr. Meth. in Phys. Res. B266 (2008) 3835.
[8]
BogdanovO.V., KorotchenkoK.B. and Pi vovarovYu.L., J. Phys. B: At. Mol. Opt. Phys. 41 (2008) 055004.
[9]
BabaevA.A., et al., On Crystal-Assisted Processes by Means of 20–800 MeV e-/e+ LNF Beams, PreprintLNF 22 (IR)(2008) pp. 1-42.
[10]
Gemmell D.S., Rev. Mod. Phys. 46(1974) 129.
[11]
Doyle P.A. and Turner P. S., ActaCrystallogr. A 24, 390 (1968).
[12]
Baier V. N., V. M. Katkov and V. M. Strakhovenko 1998, Electromagnetic Processes at High Energies in Oriented Single Crystals. World Scien tific, Singapore.
[13]
AkhiezerA.I., and Shu’lga N.F. High Energy Elec trodynamics in Matter, Gordon and Breach, Lux emburg, 1996.
ADDRESS
Science Publishing Group
1 Rockefeller Plaza,
10th and 11th Floors,
New York, NY 10020
U.S.A.
Tel: (001)347-983-5186