Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method
International Journal of Materials Science and Applications
Volume 2, Issue 2, March 2013, Pages: 74-77
Received: Apr. 4, 2013; Published: Mar. 10, 2013
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L. S. Chuah, Physics Section, School of Distance Education, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
Asmiet Ramizy, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
M. A. Mahdi, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
Z. Hassan, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
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To date, no approaches have been reported to fabricate the ZnO nano-stripes arrays on zinc foil substrate. In this method, zinc (Zn) foil was applied as substrates. The ZnO nano-stripes arrays on zinc foil substrate were prepared via photoelectrochemical (PEC) wet etching method without using templates and catalysts. To prepare ZnO nano-stripes structures, the samples were dipped into a mixture of HNO3:Ethanol (1:5) with current densities of 127 mA/cm2, and subjected to external illumination from a 100W lamp. The constant etch time is 30 min. After etching, the surface morphology and the nano-stripes structure of the ZnO films were characterized by scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). XRD pattern confirmed that the hexagonal wurtzite structure of ZnO nano-stripes were of polycrystalline structure. The optical properties of the ZnO nano-stripes arrays were characterized by Raman and photoluminescence spectroscopies at room temperature (RT). Micro-Raman results showed that A1(LO) of hexagonal ZnO nano-stripes have been observed at 520 cm-1. PL spectrum peak is obvious at 368 cm-1 for ZnO film grown on zinc foil substrate. The PL spectrum peak position in ZnO nano-stripe is blue-shifted with respect to that in unstrained ZnO bulk (381nm). This can be clarified by the approximately smaller statistical area spreading of the nano-stripes. Nano-stripes ZnO can be used as a buffer or intermediate layer to lessen substrate-induced strain, similar to porous silicon.
Nano-Stripes, Zno, PEC, SEM, XRD, Raman, PL
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L. S. Chuah, Asmiet Ramizy, M. A. Mahdi, Z. Hassan, Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method, International Journal of Materials Science and Applications. Vol. 2, No. 2, 2013, pp. 74-77. doi: 10.11648/j.ijmsa.20130202.17
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