International Journal of Materials Science and Applications
Volume 3, Issue 1, January 2014, Pages: 1-5
Received: Nov. 8, 2013;
Published: Dec. 30, 2013
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Dixit Prasher, School of Studies in Physics, Jiwaji University, Gwalior 474011- India
Kavita Dhakad, School of Studies in Physics, Jiwaji University, Gwalior 474011- India
Ashok k. Sharma, School of Studies in Physics, Jiwaji University, Gwalior 474011- India
Vikas Thakur, School of Studies in Physics, Jiwaji University, Gwalior 474011- India
Poolla Rajaram, School of Studies in Physics, Jiwaji University, Gwalior 474011- India
CuInTe2 thin films were electrochemically deposited on fluorine-doped tin oxide (<10 Ω/□) coated glass. The electrochemical bath used for the electrodeposition of CuInTe2 thin films consisted of aqueous solution mixture of 0.025 M CuCl2, 0.1 M InCl3 and pre-reacted 0.01M tellurium with HNO3.Linear and cyclic sweep voltammograms were analysed to find out the suitable deposition potentials and growth parameters. Acetronitrile was added as a supporting electrolyte and growth was carried out at the constant deposition potentials of -350 mV and - 450 mV with and without stirring. X-ray diffraction (XRD) results obtained in this work show films that were grown under stirring conditions are more oriented in the (112) direction. CuInTe2 were also analyzed by scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX). SEM study revealed the formation of uniformly covered nanoflakes of 40-50 nanometers in width and compositional analysis show that CuInTe2 film grown had an excess of indium content, but (Cu %+In%):Te% is close to stoichiometry.
Ashok k. Sharma,
Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films, International Journal of Materials Science and Applications.
Vol. 3, No. 1,
2014, pp. 1-5.
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