Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method

Nadia Bachir; Abdelkader Hamdoune; Nasr Eddine Chabane Sari

doi:doi:10.11648/j.ijmsa.20140302.12

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Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method

Nadia Bachir, Abdelkader Hamdoune, Nasr Eddine Chabane Sari

Published in International Journal of Materials Science and Applications (Volume 3, Issue 2)

Received: 20 December 2013 Accepted: Published: 20 February 2014

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Abstract

Al-bearing III-nitride semiconductor materials are essential for the development of high-frequency and high-power electronic devices and optoelectronic devices operating in the ultraviolet spectral region, because of their wide band gap and unique electronic characteristics. The InAlN alloy is attracting much attention, due to its lattice matching capability to GaN substrates or buffer layers and its variable band gap energy which can be changed from 1.9 to 6.2 eV [1]; it can potentially be used for the fabrication of advanced electronic and optoelectronic devices. AlGaN is being replaced by InAlN which is more advantageous and possesses quite remarkable properties. Unlike AlGaN which, for example, in its use in HEMT structures is in high stress, InAlN can be used in its unstressed state. Thus, the generation of defects introduced by the constraints is greatly reduced. This has the advantages of limiting the electrical performance degradation associated with the presence of such defects and improving the reliability of the material. In this work, the ternary compound InxAl1-xN in the stationary mode is studied, using the Monte Carlo simulation method. The steady-state electron drift velocity is investigated for different mole fractions of indium in the alloy, for various temperatures. The same calculation is performed at 300K for AlGaN and InGaN alloys, in order to compare them.

Published in	International Journal of Materials Science and Applications (Volume 3, Issue 2)
DOI	10.11648/j.ijmsa.20140302.12
Page(s)	20-24
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Aluminum Nitride (AlN), Iindium Nitride (InN), Aluminum Indium Nitride InAlN, Stationary Mode, Monte Carlo Simulation Method

References

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[4]	J. Zimmermann, étude par la méthode de Monte Carlo des phénomènes de transport électronique dans le Silicium de type N en régimes stationnaire et non stationnaire. Application à la simulation des composants submicroniques, Thèse de doctorat d’état, U.de Lille 1,1980.
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[6]	P. J. Price, IBM Journal of Research and Development, Vol 17 (1973) 39
[7]	O. Mouton, J. L. Thobel, and R. Fauquemberg "Monte Carlo simulation of high-field electron transport in GaAs using an analytical band structure model", J. Appl.Phys., 74 (10) (1993)
[8]	Fabrice Enjalbert, thesis of doctorat, "Etude des hétérostructures semi-conductrices III-nitrures et application au laser UV pompé par cathode à micropointes," University of Grenoble 1, 2004.
[9]	Pugh S. K, Dugdale D. J, Brand S and Abram R.A, "Electronic structure calculation on nitride semiconductors," Semicond. SCI, Technol, vol 14, 1999, pp. 23–31.
[10]	Y. Zhang et al., "Anomalous strains in the cubic phase GaN films grown on GaAs (001) by metalorganic chemical vapour deposition," J.Appl, Phys, vol. 88, N° 6, 2000, pp. 3762–3764.
[11]	Stephen K. O’Leary, Brian E. Foutz, Michael S. Shur, Lester F. Eastman, "Steady-State and Transient Electron Transport within the III–V Nitride Semiconductors, GaN, AlN, and InN," A Review J Mater Sci: Mater Electron, vol. 17, 2006, pp. 87–126.
[12]	R. Castagné, J. P. Duchemin, M. Gloanie, Ch. Rhumelhard, "Circuits intégrés en arsenic de gallium, Physique, technologie et conception," Rev. Masson, 1989.
[13]	N. Garro, A. Cros, A. Garcia, A. Cantarero, "Optical and vibrational properties of self-assembled GaN quantum dots," Institute of Materials Science, University of Valencia, 2007.
[14]	A.F.M. Anwar, Senior Member, Shangli Wu, and Richard T, Webster, "Temperature dependent transport properties in GaN, AlxGa1-xN, and InxGa1-xN semiconductors," IEEE Transactions on Electron Devices, vol. 48, No 3, March 2001, pp. 567–572.
[15]	A. Hamdoune, N. Bachir, Effects of Temperature and Concentration of Indium within Bulk Cubic InxGa1-XN: Calculation of Steady State Electron Transport by Method of Monte Carlo Simulation, International Journal of Computer and Electrical Engineering, Vol. 2, No. 5, October, 2010, 1793-8163.
[16]	Rezaee Rokn-Abadi; Steady-state and transient electron transport within bulk ternary nitride semiconductors including GaInN, AlGaN and AlInN using a three-valley Monte Carlo method; M. Indian Journal of Science and Technology; Vol. 3 No. 8 (Aug 2010).

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APA Style

Nadia Bachir, Abdelkader Hamdoune, Nasr Eddine Chabane Sari. (2014). Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method. International Journal of Materials Science and Applications, 3(2), 20-24. https://doi.org/10.11648/j.ijmsa.20140302.12

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ACS Style

Nadia Bachir; Abdelkader Hamdoune; Nasr Eddine Chabane Sari. Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method. Int. J. Mater. Sci. Appl. 2014, 3(2), 20-24. doi: 10.11648/j.ijmsa.20140302.12

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AMA Style

Nadia Bachir, Abdelkader Hamdoune, Nasr Eddine Chabane Sari. Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method. Int J Mater Sci Appl. 2014;3(2):20-24. doi: 10.11648/j.ijmsa.20140302.12

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@article{10.11648/j.ijmsa.20140302.12,
  author = {Nadia Bachir and Abdelkader Hamdoune and Nasr Eddine Chabane Sari},
  title = {Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {2},
  pages = {20-24},
  doi = {10.11648/j.ijmsa.20140302.12},
  url = {https://doi.org/10.11648/j.ijmsa.20140302.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140302.12},
  abstract = {Al-bearing III-nitride semiconductor materials are essential for the development of high-frequency and high-power electronic devices and optoelectronic devices operating in the ultraviolet spectral region, because of their wide band gap and unique electronic characteristics. The InAlN alloy is attracting much attention, due to its lattice matching capability to GaN substrates or buffer layers and its variable band gap energy which can be changed from 1.9 to 6.2 eV [1]; it can potentially be used for the fabrication of advanced electronic and optoelectronic devices. AlGaN is being replaced by InAlN which is more advantageous and possesses quite remarkable properties. Unlike AlGaN which, for example, in its use in HEMT structures is in high stress, InAlN can be used in its unstressed state. Thus, the generation of defects introduced by the constraints is greatly reduced. This has the advantages of limiting the electrical performance degradation associated with the presence of such defects and improving the reliability of the material. In this work, the ternary compound InxAl1-xN in the stationary mode is studied, using the Monte Carlo simulation method. The steady-state electron drift velocity is investigated for different mole fractions of indium in the alloy, for various temperatures. The same calculation is performed at 300K for AlGaN and InGaN alloys, in order to compare them.},
 year = {2014}
}

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TY  - JOUR
T1  - Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method
AU  - Nadia Bachir
AU  - Abdelkader Hamdoune
AU  - Nasr Eddine Chabane Sari
Y1  - 2014/02/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ijmsa.20140302.12
DO  - 10.11648/j.ijmsa.20140302.12
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 20
EP  - 24
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140302.12
AB  - Al-bearing III-nitride semiconductor materials are essential for the development of high-frequency and high-power electronic devices and optoelectronic devices operating in the ultraviolet spectral region, because of their wide band gap and unique electronic characteristics. The InAlN alloy is attracting much attention, due to its lattice matching capability to GaN substrates or buffer layers and its variable band gap energy which can be changed from 1.9 to 6.2 eV [1]; it can potentially be used for the fabrication of advanced electronic and optoelectronic devices. AlGaN is being replaced by InAlN which is more advantageous and possesses quite remarkable properties. Unlike AlGaN which, for example, in its use in HEMT structures is in high stress, InAlN can be used in its unstressed state. Thus, the generation of defects introduced by the constraints is greatly reduced. This has the advantages of limiting the electrical performance degradation associated with the presence of such defects and improving the reliability of the material. In this work, the ternary compound InxAl1-xN in the stationary mode is studied, using the Monte Carlo simulation method. The steady-state electron drift velocity is investigated for different mole fractions of indium in the alloy, for various temperatures. The same calculation is performed at 300K for AlGaN and InGaN alloys, in order to compare them.
VL  - 3
IS  - 2
ER  -

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Author Information

Nadia Bachir

Faculty of Science, University of Abou-bekr BELKAID, Unity of Research Materials and Renewable Energies, Tlemcen. ALGERIA
Abdelkader Hamdoune

Faculty of Science, University of Abou-bekr BELKAID, Unity of Research Materials and Renewable Energies, Tlemcen. ALGERIA
Nasr Eddine Chabane Sari

Faculty of Science, University of Abou-bekr BELKAID, Unity of Research Materials and Renewable Energies, Tlemcen. ALGERIA

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Plain Text BibTeX RIS

APA Style

Nadia Bachir, Abdelkader Hamdoune, Nasr Eddine Chabane Sari. (2014). Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method. International Journal of Materials Science and Applications, 3(2), 20-24. https://doi.org/10.11648/j.ijmsa.20140302.12

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ACS Style

Nadia Bachir; Abdelkader Hamdoune; Nasr Eddine Chabane Sari. Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method. Int. J. Mater. Sci. Appl. 2014, 3(2), 20-24. doi: 10.11648/j.ijmsa.20140302.12

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AMA Style

Nadia Bachir, Abdelkader Hamdoune, Nasr Eddine Chabane Sari. Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method. Int J Mater Sci Appl. 2014;3(2):20-24. doi: 10.11648/j.ijmsa.20140302.12

Copy | Download

@article{10.11648/j.ijmsa.20140302.12,
  author = {Nadia Bachir and Abdelkader Hamdoune and Nasr Eddine Chabane Sari},
  title = {Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {2},
  pages = {20-24},
  doi = {10.11648/j.ijmsa.20140302.12},
  url = {https://doi.org/10.11648/j.ijmsa.20140302.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140302.12},
  abstract = {Al-bearing III-nitride semiconductor materials are essential for the development of high-frequency and high-power electronic devices and optoelectronic devices operating in the ultraviolet spectral region, because of their wide band gap and unique electronic characteristics. The InAlN alloy is attracting much attention, due to its lattice matching capability to GaN substrates or buffer layers and its variable band gap energy which can be changed from 1.9 to 6.2 eV [1]; it can potentially be used for the fabrication of advanced electronic and optoelectronic devices. AlGaN is being replaced by InAlN which is more advantageous and possesses quite remarkable properties. Unlike AlGaN which, for example, in its use in HEMT structures is in high stress, InAlN can be used in its unstressed state. Thus, the generation of defects introduced by the constraints is greatly reduced. This has the advantages of limiting the electrical performance degradation associated with the presence of such defects and improving the reliability of the material. In this work, the ternary compound InxAl1-xN in the stationary mode is studied, using the Monte Carlo simulation method. The steady-state electron drift velocity is investigated for different mole fractions of indium in the alloy, for various temperatures. The same calculation is performed at 300K for AlGaN and InGaN alloys, in order to compare them.},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - Steady-State Electron Transport within InAlN Bulk Ternary Nitride, using the Monte Carlo Method
AU  - Nadia Bachir
AU  - Abdelkader Hamdoune
AU  - Nasr Eddine Chabane Sari
Y1  - 2014/02/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ijmsa.20140302.12
DO  - 10.11648/j.ijmsa.20140302.12
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 20
EP  - 24
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140302.12
AB  - Al-bearing III-nitride semiconductor materials are essential for the development of high-frequency and high-power electronic devices and optoelectronic devices operating in the ultraviolet spectral region, because of their wide band gap and unique electronic characteristics. The InAlN alloy is attracting much attention, due to its lattice matching capability to GaN substrates or buffer layers and its variable band gap energy which can be changed from 1.9 to 6.2 eV [1]; it can potentially be used for the fabrication of advanced electronic and optoelectronic devices. AlGaN is being replaced by InAlN which is more advantageous and possesses quite remarkable properties. Unlike AlGaN which, for example, in its use in HEMT structures is in high stress, InAlN can be used in its unstressed state. Thus, the generation of defects introduced by the constraints is greatly reduced. This has the advantages of limiting the electrical performance degradation associated with the presence of such defects and improving the reliability of the material. In this work, the ternary compound InxAl1-xN in the stationary mode is studied, using the Monte Carlo simulation method. The steady-state electron drift velocity is investigated for different mole fractions of indium in the alloy, for various temperatures. The same calculation is performed at 300K for AlGaN and InGaN alloys, in order to compare them.
VL  - 3
IS  - 2
ER  -

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