International Journal of Materials Science and Applications

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Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3

Received: 18 May 2014    Accepted: 07 June 2014    Published: 20 June 2014
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Abstract

Processes of oxidation in the films Bi2Te3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi2Te3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х1018 up to 6х1019 cm-3. The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi2O3. The method of diffraction electron with high energy – electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi - S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi2S3 from conditions of reception of thin layers - besieged as under influence on molecular pair an external electric field intensity 3000Vxcm-1, and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.

DOI 10.11648/j.ijmsa.20140303.17
Published in International Journal of Materials Science and Applications (Volume 3, Issue 3, May 2014)
Page(s) 111-115
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Structure, Oxide Layers, Component, Monocrystal, Surface, Electric Field

References
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[3] Abdullaev G., Isgenderov S., Axmedov Q. // Abstracts IV-Union Conference on the Chemistry and Technology of chalcogenides and chalcogen. Karaganda. (1990). pp. 405.
[4] Boykov Yu., Qribanov О., Danilov V. // Inorganic materials (1990). v. 26. no. 8. pp. 1628.
[5] Fillips C. Mutual diffusion and reaction. M., Mir, (1982), p. 576
[6] Skakov Yu., Edneral N., Mazzora X., Kropasin V. N Scientific papers. Moscow, Metallurgy, (1983) p. 8 (in Russian)
[7] Andries М., Ponomar V., Smirnov, Смирнов V, Mironos A. Quantum Electronics, (1986), v.13, no 6, pp.1093-1117
[8] Kalinin S. Ivanichkiy V., Chiminech V., Dov-qoshey N. Surface. Physics, chemistry, mechanics, (1984), no 12, p.100-1035.
[9] Boqolyubov N. Problems of dynamical theory in statistical physics. Moscow: Gostekhizdat, (1946) 359p.
[10] Fisher I. Statistical theory of liquids. M. IFML, (1961) 284p.
[11] Tatarinova L. The structure of amorphous solid and liquid substances. Moscow: Nauka, 1983, 151p.
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Author Information
  • Department of Physics, Azerbaijan State Oil Academy, Baku, Azerbaijan

  • Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan

  • Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan

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    Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. (2014). Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. International Journal of Materials Science and Applications, 3(3), 111-115. https://doi.org/10.11648/j.ijmsa.20140303.17

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    Musaver Musayev; Sedreddin Axmedov; Gurban Axmedov. Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. Int. J. Mater. Sci. Appl. 2014, 3(3), 111-115. doi: 10.11648/j.ijmsa.20140303.17

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    AMA Style

    Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. Int J Mater Sci Appl. 2014;3(3):111-115. doi: 10.11648/j.ijmsa.20140303.17

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  • @article{10.11648/j.ijmsa.20140303.17,
      author = {Musaver Musayev and Sedreddin Axmedov and Gurban Axmedov},
      title = {Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3},
      journal = {International Journal of Materials Science and Applications},
      volume = {3},
      number = {3},
      pages = {111-115},
      doi = {10.11648/j.ijmsa.20140303.17},
      url = {https://doi.org/10.11648/j.ijmsa.20140303.17},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ijmsa.20140303.17},
      abstract = {Processes of oxidation in the films Bi2Te3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi2Te3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х1018 up to 6х1019 cm-3. The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi2O3. The method of diffraction electron with high energy – electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi - S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi2S3 from conditions of reception of thin layers - besieged as under influence on molecular pair an external electric field intensity 3000Vxcm-1, and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.},
     year = {2014}
    }
    

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  • TY  - JOUR
    T1  - Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3
    AU  - Musaver Musayev
    AU  - Sedreddin Axmedov
    AU  - Gurban Axmedov
    Y1  - 2014/06/20
    PY  - 2014
    N1  - https://doi.org/10.11648/j.ijmsa.20140303.17
    DO  - 10.11648/j.ijmsa.20140303.17
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 111
    EP  - 115
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20140303.17
    AB  - Processes of oxidation in the films Bi2Te3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi2Te3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х1018 up to 6х1019 cm-3. The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi2O3. The method of diffraction electron with high energy – electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi - S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi2S3 from conditions of reception of thin layers - besieged as under influence on molecular pair an external electric field intensity 3000Vxcm-1, and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.
    VL  - 3
    IS  - 3
    ER  - 

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