International Journal of Materials Science and Applications

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Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor

Received: 22 August 2014    Accepted: 12 September 2014    Published: 30 September 2014
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Abstract

A porous silicon based sensor has been developed to detect anions in a salt solution by the application of DC pulses on a Semiconductor/Electrolyte system. The sensor performance can be explained invoking a model where charge accumulation in the semiconductor surface states directly affects their geometric capacitances. By varying anions concentrations in salt solution, the results show a fairly constant value of substrate resistance, whereas variations in those geometric capacitances depend on the anion concentration. The constancy of substrate resistance and variability of geometric capacitance constitute key points for the development of an anion solution sensor.

DOI 10.11648/j.ijmsa.20140305.20
Published in International Journal of Materials Science and Applications (Volume 3, Issue 5, September 2014)
Page(s) 200-204
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Porous Silicon, Chemical Sensors, Surface States

References
[1] "O. Bisi, S. Ossicini, and L. Pavesi, “Porous silicon: a quantum sponge structure for silicon based optoelectronics,” Surf. Sci. Rep., vol. 38, no. 1–3, pp. 1–126 ( 2000).
[2] G. Korotcenkov, Handbook of Gas Sensor Materials. Springer New York, 2013.
[3] N. Murillo, E. Rucavado, and A. Ramírez-Porras, “Effect of ethanol in an inorganic salt detector based on porous silicon,” Phys. Status Solidi C, vol. 6, no. 7, pp. 1709–1712 ( 2009).
[4] T. R. Dargaville, B. L. Farrugia, J. A. Broadbent, S. Pace, Z. Upton, and N. H. Voelcker, “Sensors and imaging for wound healing: A review,” Biosens. Bioelectron., vol. 41, pp. 30–42 (2013).
[5] S. Dhanekar and S. Jain, “Porous silicon biosensor: Current status,” Biosens. Bioelectron., vol. 41, pp. 54–64, (2013).
[6] A. Many, N. B. Grover, and Goldstein, Semiconductor Surfaces, By A. Many, Y. Goldstein, and N.B. Grover. Amsterdam, North-Holland Pub. Co., 1965.
[7] S. Z. Weisz, A. R. Porras, M. Gomez, A. Many, Y. Goldstein, and E. Savir, “Relation between luminescence and electronic surface characteristics in p-type porous silicon,” J. Lumin., vol. 72–74, pp. 729–730 (1997).
[8] M. Wolovelsky, J. Levy, A. Many, S. Z. Weisz, and O. Resto, “Space charge and surface state characteristics of the silicon/electrolyte interface,” Surf. Sci., vol. 171, pp. 442–464 (1986).
[9] A. Ramirez Porras, O. Resto, S. Z. Weisz, Y. Goldstein, A. Many, and E. Savir, “Luminescence and Surface-State Characteristics in P-Type Porous Silicon,” MRS Online Proc. Libr., vol. 452 (1996). "
Author Information
  • CICIMA and Escuela de Fisica, Universidad de Costa Rica, San Pedro 11501, Costa Rica

  • Escuela de Fisica, Instituto Tecnologico de Costa Rica, Cartago, Costa Rica

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  • APA Style

    Arturo Ramirez-Porras, Natalia Murillo-Quiros. (2014). Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor. International Journal of Materials Science and Applications, 3(5), 200-204. https://doi.org/10.11648/j.ijmsa.20140305.20

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    ACS Style

    Arturo Ramirez-Porras; Natalia Murillo-Quiros. Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor. Int. J. Mater. Sci. Appl. 2014, 3(5), 200-204. doi: 10.11648/j.ijmsa.20140305.20

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    AMA Style

    Arturo Ramirez-Porras, Natalia Murillo-Quiros. Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor. Int J Mater Sci Appl. 2014;3(5):200-204. doi: 10.11648/j.ijmsa.20140305.20

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  • @article{10.11648/j.ijmsa.20140305.20,
      author = {Arturo Ramirez-Porras and Natalia Murillo-Quiros},
      title = {Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor},
      journal = {International Journal of Materials Science and Applications},
      volume = {3},
      number = {5},
      pages = {200-204},
      doi = {10.11648/j.ijmsa.20140305.20},
      url = {https://doi.org/10.11648/j.ijmsa.20140305.20},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ijmsa.20140305.20},
      abstract = {A porous silicon based sensor has been developed to detect anions in a salt solution by the application of DC pulses on a Semiconductor/Electrolyte system. The sensor performance can be explained invoking a model where charge accumulation in the semiconductor surface states directly affects their geometric capacitances. By varying anions concentrations in salt solution, the results show a fairly constant value of substrate resistance, whereas variations in those geometric capacitances depend on the anion concentration. The constancy of substrate resistance and variability of geometric capacitance constitute key points for the development of an anion solution sensor.},
     year = {2014}
    }
    

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  • TY  - JOUR
    T1  - Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor
    AU  - Arturo Ramirez-Porras
    AU  - Natalia Murillo-Quiros
    Y1  - 2014/09/30
    PY  - 2014
    N1  - https://doi.org/10.11648/j.ijmsa.20140305.20
    DO  - 10.11648/j.ijmsa.20140305.20
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 200
    EP  - 204
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20140305.20
    AB  - A porous silicon based sensor has been developed to detect anions in a salt solution by the application of DC pulses on a Semiconductor/Electrolyte system. The sensor performance can be explained invoking a model where charge accumulation in the semiconductor surface states directly affects their geometric capacitances. By varying anions concentrations in salt solution, the results show a fairly constant value of substrate resistance, whereas variations in those geometric capacitances depend on the anion concentration. The constancy of substrate resistance and variability of geometric capacitance constitute key points for the development of an anion solution sensor.
    VL  - 3
    IS  - 5
    ER  - 

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