The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching

Lu Xiaoci; Li Changqing; Ding Gangjian

doi:doi:10.11648/j.ijmsa.20160503.18

| Peer-Reviewed |

The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching

Lu Xiaoci, Li Changqing, Ding Gangjian

Received: 14 July 2016 Accepted: Published: 15 July 2016

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

The preparation of silicon nanowires by metal catalytic chemical etching has the advantages of low cost and simple operation. This study attempts to use a silver-assisted chemical etching to prepare silicon nanowires. In the process of experiment we change the corrosive liquid concentration of corrosion and corrosion time to compare these factors on the surface topography of silicon nanowires in the preparation. The experimental results were observed by optical microscope and electron microscope. The experiment shows that in the process of etching, etching time of CLSM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. The wafer surface surface morphology of honeycomb like, and the result shows that when the corrosive liquid concentration is 0.02mol/L and the corrosive time is four works better, formed the length 100-200nm and the line diameter 100μm and more uniform silicon nanowires.

DOI	10.11648/j.ijmsa.20160503.18
Published in	International Journal of Materials Science and Applications (Volume 5, Issue 3, May 2016)
Page(s)	164-168
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Metal-Assisted Chemical Etching, Silicon Nanowires, SEM

References

[1]	Pei Lizhai, Tang Yuanhong, Guo Chi. Optical properties of one dimensional silicon nano materials [J]. Journal of artificial crystal, 2006 (01).
[2]	Pei Lizhai, Tang Yuanhong, Guo pool. Journal of materials review [Dissertation] electrical properties of silicon nanowires, 2004 (04).
[3]	Morales A M Lieber, C M. A laser [3] ablation method for the synthesis of crystalline semiconductor nanowires [J]. Since, 1998, 279: 208-211.
[4]	Zhang Y F Tang, Y H [4], N Wang, nanowires prepared by laser ablation at high temperature [J]. Appl Phys Lett et a1. Silicon, 1998, 72 (15): 1835-1837.
[5]	Tang Y H Zhang, Y F et, N Wang, a1. Morphology of Si nanowires synthesized by high temperature laser ablation [J]. J Appl Phys [5], 1999, 85 (11): 7981-7983.
[6]	Li X Bohn, P W. Metal-Assited chemical in etching HF/H₂O₂ produces porous silicon [J]. Appl Phys Lett [6], 2000, 77: 2572-2574.
[7]	Splinter et, al. Novel porous silicon formation [7] A. technology using internal current generation Mat, Sci E C, 15 (1-2), 2001, 109-112 PP.
[8]	Canham L T. Silicon [8] quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Appl Phys Lett, 1990, 57: 1046.
[9]	Yang Lijiao, Wang Jinliang, Yang Chengtao such as. Silicon nanowire light induced luminescence mechanism and research progress of materials [J]. Herald, 2012, 26 (21): 135-141
[10]	Bai Z G Yu D P Wang J J etal. Synthesis and photoluminescence properties of semiconductor nanowires [J]. Master Sci Eng B 2000, 72: 117-120 [10].
[11]	Li Changqing, Zhou Tingting, Mei Xinli, Morningstar. Chemical etching step method preparing silicon nanowires (English) [J]. Materials science and engineering of 2013 (04).
[12]	Yao Rihui, Chen Ziming, impacts, Ying Cong Chen, Chen Jin Qiao. Metal catalyzed chemical etching method for preparing silicon nanowire materials [J]. Herald, 2013, 23: 1-6.
[13]	Liu Li, Cao Yang, He Junhui, Yang Qiaowen. Preparation of silicon nanowire arrays and their applications in [J]. chemistry, 2013, Z1: 248-259.
[14]	Zhou Yang. Study on Preparation of silicon nanowires by chemical etching [D]. Dalian University of Technology, 2011.
[15]	Zhao Meihong. Preparation and optical properties of silicon nano materials [D]. Capital Normal University, 2007.
[16]	Yao Rihui, Chen Ziming, impacts, Ying Cong Chen, Chen Jin Qiao. Metal catalyzed chemical etching method for preparing silicon nanowire materials [J]. Herald, 2013, 23: 1-6.
[17]	Chen Ziming, impacts, Ying Cong Chen, Chen Jin Qiao, Xiao Jingyang, Yao Rihui. Based on catalytic etching of silicon nanowires preparation [J]. Functional materials. 2014, 12: 12122-12127.
[18]	Zhou Jianwei, Liang Jingqiu, Liang Zhongzhu, Wang Weibiao. Optical properties of silicon nanowire arrays [J]. Journal of luminescence, 2010, 06: 894-898.
[19]	Huang Yanhua, Han rang, Chen Songyan. Preparation of three-dimensional porous silicon by chemical corrosion induced by metal silver [J]. Journal of Putian University, 2015, 05: 54-59.

Cite This Article

Plain Text BibTeX RIS

APA Style

Lu Xiaoci, Li Changqing, Ding Gangjian. (2016). The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. International Journal of Materials Science and Applications, 5(3), 164-168. https://doi.org/10.11648/j.ijmsa.20160503.18

Copy | Download

ACS Style

Lu Xiaoci; Li Changqing; Ding Gangjian. The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. Int. J. Mater. Sci. Appl. 2016, 5(3), 164-168. doi: 10.11648/j.ijmsa.20160503.18

Copy | Download

AMA Style

Lu Xiaoci, Li Changqing, Ding Gangjian. The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. Int J Mater Sci Appl. 2016;5(3):164-168. doi: 10.11648/j.ijmsa.20160503.18

Copy | Download

@article{10.11648/j.ijmsa.20160503.18,
  author = {Lu Xiaoci and Li Changqing and Ding Gangjian},
  title = {The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching},
  journal = {International Journal of Materials Science and Applications},
  volume = {5},
  number = {3},
  pages = {164-168},
  doi = {10.11648/j.ijmsa.20160503.18},
  url = {https://doi.org/10.11648/j.ijmsa.20160503.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160503.18},
  abstract = {The preparation of silicon nanowires by metal catalytic chemical etching has the advantages of low cost and simple operation. This study attempts to use a silver-assisted chemical etching to prepare silicon nanowires. In the process of experiment we change the corrosive liquid concentration of corrosion and corrosion time to compare these factors on the surface topography of silicon nanowires in the preparation. The experimental results were observed by optical microscope and electron microscope. The experiment shows that in the process of etching, etching time of CLSM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. The wafer surface surface morphology of honeycomb like, and the result shows that when the corrosive liquid concentration is 0.02mol/L and the corrosive time is four works better, formed the length 100-200nm and the line diameter 100μm and more uniform silicon nanowires.},
 year = {2016}
}

Copy | Download

TY  - JOUR
T1  - The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching
AU  - Lu Xiaoci
AU  - Li Changqing
AU  - Ding Gangjian
Y1  - 2016/07/15
PY  - 2016
N1  - https://doi.org/10.11648/j.ijmsa.20160503.18
DO  - 10.11648/j.ijmsa.20160503.18
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 164
EP  - 168
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20160503.18
AB  - The preparation of silicon nanowires by metal catalytic chemical etching has the advantages of low cost and simple operation. This study attempts to use a silver-assisted chemical etching to prepare silicon nanowires. In the process of experiment we change the corrosive liquid concentration of corrosion and corrosion time to compare these factors on the surface topography of silicon nanowires in the preparation. The experimental results were observed by optical microscope and electron microscope. The experiment shows that in the process of etching, etching time of CLSM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. The wafer surface surface morphology of honeycomb like, and the result shows that when the corrosive liquid concentration is 0.02mol/L and the corrosive time is four works better, formed the length 100-200nm and the line diameter 100μm and more uniform silicon nanowires.
VL  - 5
IS  - 3
ER  -

Copy | Download

Author Information

Lu Xiaoci

School of Information Engineering, Zhengzhou University, Zhengzhou, China
Li Changqing

School of Information Engineering, Zhengzhou University, Zhengzhou, China
Ding Gangjian

School of Information Engineering, Zhengzhou University, Zhengzhou, China

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Lu Xiaoci, Li Changqing, Ding Gangjian. (2016). The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. International Journal of Materials Science and Applications, 5(3), 164-168. https://doi.org/10.11648/j.ijmsa.20160503.18

Copy | Download

ACS Style

Lu Xiaoci; Li Changqing; Ding Gangjian. The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. Int. J. Mater. Sci. Appl. 2016, 5(3), 164-168. doi: 10.11648/j.ijmsa.20160503.18

Copy | Download

AMA Style

Lu Xiaoci, Li Changqing, Ding Gangjian. The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. Int J Mater Sci Appl. 2016;5(3):164-168. doi: 10.11648/j.ijmsa.20160503.18

Copy | Download

@article{10.11648/j.ijmsa.20160503.18,
  author = {Lu Xiaoci and Li Changqing and Ding Gangjian},
  title = {The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching},
  journal = {International Journal of Materials Science and Applications},
  volume = {5},
  number = {3},
  pages = {164-168},
  doi = {10.11648/j.ijmsa.20160503.18},
  url = {https://doi.org/10.11648/j.ijmsa.20160503.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160503.18},
  abstract = {The preparation of silicon nanowires by metal catalytic chemical etching has the advantages of low cost and simple operation. This study attempts to use a silver-assisted chemical etching to prepare silicon nanowires. In the process of experiment we change the corrosive liquid concentration of corrosion and corrosion time to compare these factors on the surface topography of silicon nanowires in the preparation. The experimental results were observed by optical microscope and electron microscope. The experiment shows that in the process of etching, etching time of CLSM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. The wafer surface surface morphology of honeycomb like, and the result shows that when the corrosive liquid concentration is 0.02mol/L and the corrosive time is four works better, formed the length 100-200nm and the line diameter 100μm and more uniform silicon nanowires.},
 year = {2016}
}

Copy | Download

TY  - JOUR
T1  - The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching
AU  - Lu Xiaoci
AU  - Li Changqing
AU  - Ding Gangjian
Y1  - 2016/07/15
PY  - 2016
N1  - https://doi.org/10.11648/j.ijmsa.20160503.18
DO  - 10.11648/j.ijmsa.20160503.18
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 164
EP  - 168
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20160503.18
AB  - The preparation of silicon nanowires by metal catalytic chemical etching has the advantages of low cost and simple operation. This study attempts to use a silver-assisted chemical etching to prepare silicon nanowires. In the process of experiment we change the corrosive liquid concentration of corrosion and corrosion time to compare these factors on the surface topography of silicon nanowires in the preparation. The experimental results were observed by optical microscope and electron microscope. The experiment shows that in the process of etching, etching time of CLSM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. The wafer surface surface morphology of honeycomb like, and the result shows that when the corrosive liquid concentration is 0.02mol/L and the corrosive time is four works better, formed the length 100-200nm and the line diameter 100μm and more uniform silicon nanowires.
VL  - 5
IS  - 3
ER  -

Copy | Download