The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors

Liangliang Tang; Chang Xu; Zhuming Liu

doi:doi:10.11648/j.ijmsa.20160505.18

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The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors

Liangliang Tang, Chang Xu, Zhuming Liu

Published in International Journal of Materials Science and Applications (Volume 5, Issue 5)

Received: 13 October 2016 Accepted: Published: 13 October 2016

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Abstract

Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.

Published in	International Journal of Materials Science and Applications (Volume 5, Issue 5)
DOI	10.11648/j.ijmsa.20160505.18
Page(s)	228-234
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Zn Diffusion, Self-Diffusion, III-V Compound Semiconductors

References

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APA Style

Liangliang Tang, Chang Xu, Zhuming Liu. (2016). The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. International Journal of Materials Science and Applications, 5(5), 228-234. https://doi.org/10.11648/j.ijmsa.20160505.18

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ACS Style

Liangliang Tang; Chang Xu; Zhuming Liu. The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. Int. J. Mater. Sci. Appl. 2016, 5(5), 228-234. doi: 10.11648/j.ijmsa.20160505.18

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AMA Style

Liangliang Tang, Chang Xu, Zhuming Liu. The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. Int J Mater Sci Appl. 2016;5(5):228-234. doi: 10.11648/j.ijmsa.20160505.18

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@article{10.11648/j.ijmsa.20160505.18,
  author = {Liangliang Tang and Chang Xu and Zhuming Liu},
  title = {The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors},
  journal = {International Journal of Materials Science and Applications},
  volume = {5},
  number = {5},
  pages = {228-234},
  doi = {10.11648/j.ijmsa.20160505.18},
  url = {https://doi.org/10.11648/j.ijmsa.20160505.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160505.18},
  abstract = {Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.},
 year = {2016}
}

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TY  - JOUR
T1  - The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors
AU  - Liangliang Tang
AU  - Chang Xu
AU  - Zhuming Liu
Y1  - 2016/10/13
PY  - 2016
N1  - https://doi.org/10.11648/j.ijmsa.20160505.18
DO  - 10.11648/j.ijmsa.20160505.18
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 228
EP  - 234
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20160505.18
AB  - Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.
VL  - 5
IS  - 5
ER  -

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Author Information

Liangliang Tang

College of Energy and Electricity, Hohai University, Nanjing, China
Chang Xu

College of Energy and Electricity, Hohai University, Nanjing, China
Zhuming Liu

Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China

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Plain Text BibTeX RIS

APA Style

Liangliang Tang, Chang Xu, Zhuming Liu. (2016). The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. International Journal of Materials Science and Applications, 5(5), 228-234. https://doi.org/10.11648/j.ijmsa.20160505.18

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ACS Style

Liangliang Tang; Chang Xu; Zhuming Liu. The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. Int. J. Mater. Sci. Appl. 2016, 5(5), 228-234. doi: 10.11648/j.ijmsa.20160505.18

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AMA Style

Liangliang Tang, Chang Xu, Zhuming Liu. The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. Int J Mater Sci Appl. 2016;5(5):228-234. doi: 10.11648/j.ijmsa.20160505.18

Copy | Download

@article{10.11648/j.ijmsa.20160505.18,
  author = {Liangliang Tang and Chang Xu and Zhuming Liu},
  title = {The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors},
  journal = {International Journal of Materials Science and Applications},
  volume = {5},
  number = {5},
  pages = {228-234},
  doi = {10.11648/j.ijmsa.20160505.18},
  url = {https://doi.org/10.11648/j.ijmsa.20160505.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160505.18},
  abstract = {Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.},
 year = {2016}
}

Copy | Download

TY  - JOUR
T1  - The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors
AU  - Liangliang Tang
AU  - Chang Xu
AU  - Zhuming Liu
Y1  - 2016/10/13
PY  - 2016
N1  - https://doi.org/10.11648/j.ijmsa.20160505.18
DO  - 10.11648/j.ijmsa.20160505.18
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 228
EP  - 234
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20160505.18
AB  - Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.
VL  - 5
IS  - 5
ER  -

Copy | Download