Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb:  The Window Layer Effect

Mamadou Dia; Babacar Mbow; EL Hadji Mamadou Keita; Abdoul Aziz Correa; Mamadou Lamine Sow

doi:doi:10.11648/j.ijmsa.20170601.17

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Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect

Mamadou Dia, Babacar Mbow, EL Hadji Mamadou Keita, Abdoul Aziz Correa, Mamadou Lamine Sow

Published in International Journal of Materials Science and Applications (Volume 6, Issue 1)

Received: 8 December 2016 Accepted: 20 December 2016 Published: 18 January 2017

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Abstract

The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga_1-xIn_xSb, Ga_1-yAl_ySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.

Published in	International Journal of Materials Science and Applications (Volume 6, Issue 1)
DOI	10.11648/j.ijmsa.20170601.17
Page(s)	45-53
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

III-V Photodetectors, Heterostructures, Near-Infrared, Quantum Efficiency, Spectral Response, Window Layer

References

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[2]	L. Gouskov, M. Boustani, G. Bougnot, C. Gril, A. Joullie et al. Photodétecteurs à base de Ga1-xAlxSb dans la gamme 1,3-1,6µm. Revue de physique Appliquée, 18(12), 781-782, (1983).
[3]	P. Viktorovitch. Passivation des sémiconducteurs III-V. Revue Phys.Appl 25 895-914, (1990).
[4]	B. MBOW, A. MEZERREG, N. REZZOUG, and C. LLINARES. Spectral Responses in Near-infrared of III-V Photodetectors. Phys, sat. sol (a) 141, 511-525, (1994).
[5]	YUAN. TIAN et al. The analysis of the performance for Photodetectors. Phys, sat. sol(a) 174, 414, (1999).
[6]	A Joullié, F. De Anda, P. Salsac. Diffusion du zinc dans GaAlSb et application à la photodétection infrarouge. Revue Phys. Appl. 19223-230 (1984).
[7]	C. Touzi, Z. Chine, T. Boufaden, B. El Jani. Etude de la réponse spectacle des cellules photovoltaïques à base de GaN.Phys, Chem. News 1 69-72, (2001).
[8]	S. N. SINGH and P. K. SINGH. Exact calculation of back surface recombination velocity and its influence on quantum efficiency of n+-p-p+ structure based silicon cells. Proc IEEE 1629-1631, (1988).
[9]	L. Nam, M. Rodot et al. Réponse spectacle de photopiles de haut rendement au silicium multicristallin. Journal de physique III EDP Sciences, 2 (7), 1305-1316, (1992).
[10]	H Mathieu & H Fanet. Physique des sémiconducteurs et des composants électroniques, Dunod: 6ème édition
[11]	J. Bozec et G. Rolland. Evaluation de la longueur de diffusion par la méthode EBIC dans les piles solaires à l’AsGa et application à l’environnement spatial. Revue de Physique Appliquée, 21 (8), 509-514, (1986).

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Mamadou Dia, Babacar Mbow, EL Hadji Mamadou Keita, Abdoul Aziz Correa, Mamadou Lamine Sow. (2017). Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. International Journal of Materials Science and Applications, 6(1), 45-53. https://doi.org/10.11648/j.ijmsa.20170601.17

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ACS Style

Mamadou Dia; Babacar Mbow; EL Hadji Mamadou Keita; Abdoul Aziz Correa; Mamadou Lamine Sow. Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. Int. J. Mater. Sci. Appl. 2017, 6(1), 45-53. doi: 10.11648/j.ijmsa.20170601.17

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AMA Style

Mamadou Dia, Babacar Mbow, EL Hadji Mamadou Keita, Abdoul Aziz Correa, Mamadou Lamine Sow. Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. Int J Mater Sci Appl. 2017;6(1):45-53. doi: 10.11648/j.ijmsa.20170601.17

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@article{10.11648/j.ijmsa.20170601.17,
  author = {Mamadou Dia and Babacar Mbow and EL Hadji Mamadou Keita and Abdoul Aziz Correa and Mamadou Lamine Sow},
  title = {Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb:  The Window Layer Effect},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {1},
  pages = {45-53},
  doi = {10.11648/j.ijmsa.20170601.17},
  url = {https://doi.org/10.11648/j.ijmsa.20170601.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170601.17},
  abstract = {The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga1-xInxSb, Ga1-yAlySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.},
 year = {2017}
}

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TY  - JOUR
T1  - Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb:  The Window Layer Effect
AU  - Mamadou Dia
AU  - Babacar Mbow
AU  - EL Hadji Mamadou Keita
AU  - Abdoul Aziz Correa
AU  - Mamadou Lamine Sow
Y1  - 2017/01/18
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170601.17
DO  - 10.11648/j.ijmsa.20170601.17
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 45
EP  - 53
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170601.17
AB  - The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga1-xInxSb, Ga1-yAlySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.
VL  - 6
IS  - 1
ER  -

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Author Information

Mamadou Dia

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
Babacar Mbow

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
EL Hadji Mamadou Keita

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
Abdoul Aziz Correa

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
Mamadou Lamine Sow

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal

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APA Style

Mamadou Dia, Babacar Mbow, EL Hadji Mamadou Keita, Abdoul Aziz Correa, Mamadou Lamine Sow. (2017). Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. International Journal of Materials Science and Applications, 6(1), 45-53. https://doi.org/10.11648/j.ijmsa.20170601.17

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ACS Style

Mamadou Dia; Babacar Mbow; EL Hadji Mamadou Keita; Abdoul Aziz Correa; Mamadou Lamine Sow. Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. Int. J. Mater. Sci. Appl. 2017, 6(1), 45-53. doi: 10.11648/j.ijmsa.20170601.17

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AMA Style

Mamadou Dia, Babacar Mbow, EL Hadji Mamadou Keita, Abdoul Aziz Correa, Mamadou Lamine Sow. Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. Int J Mater Sci Appl. 2017;6(1):45-53. doi: 10.11648/j.ijmsa.20170601.17

Copy | Download

@article{10.11648/j.ijmsa.20170601.17,
  author = {Mamadou Dia and Babacar Mbow and EL Hadji Mamadou Keita and Abdoul Aziz Correa and Mamadou Lamine Sow},
  title = {Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb:  The Window Layer Effect},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {1},
  pages = {45-53},
  doi = {10.11648/j.ijmsa.20170601.17},
  url = {https://doi.org/10.11648/j.ijmsa.20170601.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170601.17},
  abstract = {The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga1-xInxSb, Ga1-yAlySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb:  The Window Layer Effect
AU  - Mamadou Dia
AU  - Babacar Mbow
AU  - EL Hadji Mamadou Keita
AU  - Abdoul Aziz Correa
AU  - Mamadou Lamine Sow
Y1  - 2017/01/18
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170601.17
DO  - 10.11648/j.ijmsa.20170601.17
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 45
EP  - 53
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170601.17
AB  - The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga1-xInxSb, Ga1-yAlySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.
VL  - 6
IS  - 1
ER  -

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