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Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect
International Journal of Materials Science and Applications
Volume 6, Issue 1, January 2017, Pages: 45-53
Received: Dec. 8, 2016; Accepted: Dec. 20, 2016; Published: Jan. 18, 2017
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Authors
Mamadou Dia, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
Babacar Mbow, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
EL Hadji Mamadou Keita, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
Abdoul Aziz Correa, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
Mamadou Lamine Sow, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and TechnologyUniversity Cheikh Anta DIOP, Dakar, Senegal
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Abstract
The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga1-xInxSb, Ga1-yAlySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.
Keywords
III-V Photodetectors, Heterostructures, Near-Infrared, Quantum Efficiency, Spectral Response, Window Layer
To cite this article
Mamadou Dia, Babacar Mbow, EL Hadji Mamadou Keita, Abdoul Aziz Correa, Mamadou Lamine Sow, Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect, International Journal of Materials Science and Applications. Vol. 6, No. 1, 2017, pp. 45-53. doi: 10.11648/j.ijmsa.20170601.17
Copyright
Copyright © 2017 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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