International Journal of Materials Science and Applications

| Peer-Reviewed |

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics

Received: 16 December 2016    Accepted: 27 December 2016    Published: 21 January 2017
Views:       Downloads:

Share This Article

Abstract

In this work, effect of vanadium doping of CaCu3Ti4O12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C – 160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.

DOI 10.11648/j.ijmsa.20170601.18
Published in International Journal of Materials Science and Applications (Volume 6, Issue 1, January 2017)
Page(s) 54-64
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Ceramics, Solid State Reaction Method, Microstructure, Dielectric Properties, Electrical Conduction

References
[1] M. A. Subramanian, D. Li, N. Duan, B. A. Reisner, A. W. Sleight, “High dielectric constant in ACu3Ti4O12 and ACu3Ti3FeO12 phases,” J. Solid State Chem., Vol. 151, pp. 323-325, 2000.
[2] W. D. Kingery, H. K. Bowen, D. R. Uhlmann, “Introduction to ceramics,” second ed., John Wiley and Sons Inc., MA, pp. 913-974, 1976.
[3] K. Thomas Jacob, Chander Shekhar, Xiaogan Li, Girish M. Kale, “Gibbs energy of formation of CaCu3Ti4O12 and phase relations in the system CaO–CuO/Cu2O–TiO2,” Acta Mater., Vol. 56, pp. 4798–4803, 2008.
[4] A. K. Rai, K. D. Mandal, D. Kumar, O. Parkash, “Characterization of nickel doped CCTO: CaCu2.9Ni0.1Ti4O12 and CaCu3Ti3.9Ni0.1O12 synthesized by semi-wet route,” J. Alloys Compd., Vol. 491, pp. 507–512, 2010.
[5] V. Brize, G. Gruener, J. Wolfman, K. Fatyeyeva, M. Tabellout, M. Gervais, F. Gervais, “Grain size effects on the dielectric constant of CaCu3Ti4O12 ceramics,” Materials Science and Engineering, Vol. B 129, pp. 135–138, 2006.
[6] W. D. Kingery, H. K. Bowen, D. R. Uhlmann, “Introduction to Ceramics,” second ed., John Wiley and Sons Inc., MA, pp. 913-974, 1976.
[7] D. C. Sinclair, T. B. Adams, F. D. Morrison, A. R. West, “CaCu3Ti4O12: one-step internal barrier layer capacitor,” Appl. Phys. Lett., Vol. 80, pp. 2153-2155, 2000.
[8] A. R. West, T. B. Adams, F. D. Morrison, D. C. Sinclair, “Novel high capacitance materials: BaTiO3: La and CaCu3Ti4O12,” J. Eur. Ceram. Soc., Vol. 24, pp. 1439–1448, 2004.
[9] Virginie Brizé, Cécile Autret-Lambert, Jérôme Wolfman, Monique Gervais, Patrick Simon, François Gervais, “Temperature dependence of electron spin resonance in CaCu3Ti4O12 substituted with transition metal elements,” sol. State sciences, Vol. 11, pp. 875-880, 2009.
[10] Pei Liu, Yuanming Lai, Yiming Zeng, Shuang Wu, Zihan Huang, Jiao Han, “Influence of sintering conditions on microstructure and electrical properties of CaCu3Ti4O12 (CCTO) ceramics, ” J. of Alloys and Compounds, Vol. 650, pp. 59-64, 2015.
[11] Rosyaini Afindi Zaman, Mohamad Johari Abu, Julie Juliewatty Mohamed, Mohd Fadzil Ain, Zainal Arifin Ahmad, “Investigation of the Mixing Medium Effect on the Development of the CCTO Microstructure at 1000 ̊C.” Procedia Chemistry, Vol. 16, pp. 906-909, 2016.
[12] T. B. Adams, D. C. Sinclair, A. R. West, “Influence of Processing Conditions on the Electrical Properties of CaCu3Ti4O12 Ceramics,” J. Am. Ceram. Soc., Vol. 89, pp. 3129, 2006.
[13] J. Li, A. W. Sleight, M. A. Subramanian, “Evidence for internal resistive barriers in a crystal of the giant dielectric constant material: CaCu3Ti4O12,” Solid State Commun., Vol. 135, pp. 260, 2005.
[14] Juan Rodriguez-Carvajal, Laboratoire Léon Brillouin, (CEA-CNRS), CEA/Saclay, France.
[15] L. Fang, M. R. Shen, W. W. Cao, “Enhanced dielectric response of GeO2-doped CaCu3Ti4O12 ceramics,” J. Appl. Phys., Vol. 95, pp. 6483, 2004.
[16] P. B. A. Fechine, A. F. L. Almeida, F. N. A. Freire, M. R. P. Santos, F. M. M. Pereira, R. Jimenez, J. Mendiola, A. S. B. Sombra, “Dielectric relaxation of BaTiO3 (BTO)–CaCu3Ti4O12 (CCTO) composite screen-printed thick films at low temperatures,” Mat. Chem. and Physics, Vol. 96, pp. 402–408, 2006.
[17] Raman Kashayap, O. P. Thakur, R. P. Tandon, “Study of structural, diectric and electrical conduction behaviour of Gd substituted CaCu3Ti4O12 ceramics,” ceramis international, vol. 38, pp. 3029-3037, 2012.
[18] L. F. Xu, P. B. Qi, X. P. Song, X. J. Luo, C. P. Yang, “Dielectric relaxation behaviors of pure Pr6O11-doped CaCu3Ti4O12 ceramics in high temperature range,” J. of Alloys and Compounds, Vol. 509, pp. 7697-7701, 2011.
[19] B. S. Prakash, K. B. R. Varma, “Influence of sintering conditions and doping on the dielectric relaxation originating from the surface layer effects in CaCu/sub 3/Ti/sub 4/O/sub 12/ ceramics,” J. Phys. Chem. Solids, Vol. 68, pp. 490, 2007.
[20] X. J. Luo, C. P. Yang, S. S Chen, X. P. Song, H. Wang, K. Baerner, “The trap state relaxation related polarization in CaCu3Ti4O12,” J. Appl. Phys., Vol. 108, pp. 1-5, 2010.
[21] A. M. M. Farea, Shalendra Kumar, Khalid Mujasam Batoo, Ali youssef, Alimuddin, “influence of frequency, temperature and composition on electrical properties of polycrystalline Co0.5CdxFe2.5-xO4 ferrites,” Physica B, Vol. 403, pp. 684-701, 2008.
[22] W. Li, R. W. Schwartz, “AC conductivity relaxation processes in CaCu3Ti4O12 ceramics: grain boundary and domain boundary effects,” Appl. Phys. Lett., Vol. 89, pp. 242906 (1-3), 2006.
[23] A. K. Jonscher, “Dielectric relaxation in solids,” first ed., Chelsea Dielectrics Press, London, pp. 62-115, 1983.
Author Information
  • Laboratory of Environmental and Materials Chemistry, Jean Lorougnon GUEDE University, Daloa, Ivory Coast

  • Laboratory of Materials Inorganics Chemistry, Félix Houphou?t BOIGNY University, Abidjan, Ivory Coast

  • GREMAN UMR 7347 Laboratory, Fran?ois Rabelais University, Tours, France

  • GREMAN UMR 7347 Laboratory, Fran?ois Rabelais University, Tours, France

  • GREMAN UMR 7347 Laboratory, Fran?ois Rabelais University, Tours, France

  • GREMAN UMR 7347 Laboratory, Fran?ois Rabelais University, Tours, France

Cite This Article
  • APA Style

    Séka Simplice Kouassi, Jean-Pierre Sagou Sagou, Cécile Autret-Lambert, Sonia Didry, Anoop Nautiyal, et al. (2017). Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. International Journal of Materials Science and Applications, 6(1), 54-64. https://doi.org/10.11648/j.ijmsa.20170601.18

    Copy | Download

    ACS Style

    Séka Simplice Kouassi; Jean-Pierre Sagou Sagou; Cécile Autret-Lambert; Sonia Didry; Anoop Nautiyal, et al. Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. Int. J. Mater. Sci. Appl. 2017, 6(1), 54-64. doi: 10.11648/j.ijmsa.20170601.18

    Copy | Download

    AMA Style

    Séka Simplice Kouassi, Jean-Pierre Sagou Sagou, Cécile Autret-Lambert, Sonia Didry, Anoop Nautiyal, et al. Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. Int J Mater Sci Appl. 2017;6(1):54-64. doi: 10.11648/j.ijmsa.20170601.18

    Copy | Download

  • @article{10.11648/j.ijmsa.20170601.18,
      author = {Séka Simplice Kouassi and Jean-Pierre Sagou Sagou and Cécile Autret-Lambert and Sonia Didry and Anoop Nautiyal and Marc Lethiecq},
      title = {Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics},
      journal = {International Journal of Materials Science and Applications},
      volume = {6},
      number = {1},
      pages = {54-64},
      doi = {10.11648/j.ijmsa.20170601.18},
      url = {https://doi.org/10.11648/j.ijmsa.20170601.18},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ijmsa.20170601.18},
      abstract = {In this work, effect of vanadium doping of CaCu3Ti4O12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C – 160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.},
     year = {2017}
    }
    

    Copy | Download

  • TY  - JOUR
    T1  - Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics
    AU  - Séka Simplice Kouassi
    AU  - Jean-Pierre Sagou Sagou
    AU  - Cécile Autret-Lambert
    AU  - Sonia Didry
    AU  - Anoop Nautiyal
    AU  - Marc Lethiecq
    Y1  - 2017/01/21
    PY  - 2017
    N1  - https://doi.org/10.11648/j.ijmsa.20170601.18
    DO  - 10.11648/j.ijmsa.20170601.18
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 54
    EP  - 64
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20170601.18
    AB  - In this work, effect of vanadium doping of CaCu3Ti4O12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C – 160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.
    VL  - 6
    IS  - 1
    ER  - 

    Copy | Download

  • Sections