Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique
International Journal of Materials Science and Applications
Volume 6, Issue 4, July 2017, Pages: 223-229
Received: Jan. 4, 2016; Accepted: Jun. 28, 2017; Published: Jul. 26, 2017
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Authors
Sabur Abiodun Ayinde, Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria; Department of Physics/Electronics, Federal Polytechnic, Ede, Nigeria
Adetokunbo T. Famojuro, Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria
Oladepo Fasakin, Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
Bolutife Olofinjana, Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
Adetayo Victor Adedeji, Department of Chemistry and Physics, Elizabeth City State University, Elizabeth City, NC, USA
Moses Sesan Eluyemi, Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
Marcus Adebola Eleruja, Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
Ezekiel Oladele Bolarinwa Ajayi, Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
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Abstract
A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm3/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1  and  were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.
Keywords
Copper Cadmium Oxy-Sulphide, Precursor, Metal Organic Chemical Vapor Deposition (MOCVD), Thin Film, Characterization
To cite this article
Sabur Abiodun Ayinde, Adetokunbo T. Famojuro, Oladepo Fasakin, Bolutife Olofinjana, Adetayo Victor Adedeji, Moses Sesan Eluyemi, Marcus Adebola Eleruja, Ezekiel Oladele Bolarinwa Ajayi, Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique, International Journal of Materials Science and Applications. Vol. 6, No. 4, 2017, pp. 223-229. doi: 10.11648/j.ijmsa.20170604.19
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Copyright © 2017 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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