Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz
International Journal of Materials Science and Applications
Volume 6, Issue 5, September 2017, Pages: 230-234
Received: Jul. 4, 2017;
Accepted: Jul. 17, 2017;
Published: Aug. 11, 2017
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Tsung-Tse Lin, Terahertz Quantum Device Laboratory, Center for Advanced Photonics, RIKEN, Sendai, Japan
Hideki Hirayama, Terahertz Quantum Device Laboratory, Center for Advanced Photonics, RIKEN, Sendai, Japan
In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4～5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.
Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz, International Journal of Materials Science and Applications.
Vol. 6, No. 5,
2017, pp. 230-234.
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