Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons
International Journal of Materials Science and Applications
Volume 8, Issue 4, July 2019, Pages: 56-67
Received: Jul. 10, 2019;
Accepted: Aug. 18, 2019;
Published: Sep. 6, 2019
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Ousmane Ngom, Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
Modou Faye, Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
Mamadou Mbaye, Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
Cheikh Mbow, Department of Physics, Laboratory of Fluid Mechanics, Hydraulics and Transfers, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
Bassirou Ba, Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
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In this article, a detailed study of the physical phenomena in the base of a silicon heterojunction solar cell (HIT) is elaborated. To carry out this work we have established a mathematical model which is in the form of a system of two continuity equations. The latter are subjected to physical conditions of nature to define our field of study. This system of continuity equations is solved using a computational program in a digital programming language. Numerical analysis is used in this study because the mathematical system describing the transport phenomena of load carriers (electrons and excitons) in a silicon heterojunction photovoltaic cell is very complex. Thus, to facilitate numerical resolution, the dimensional parameters of the physical system are rendered dimensionless. The resulting dimensionless equations are discretized by the finite volume method. They are then implemented in a calculation program by an iterative line-by-line relaxation method of the Gauss-Siedel type. In addition, with a low density coupling coefficient b=10-16cm3s-1 that depends on the material’s properties, the influence of temperature on the diffusion lengths, on the carrier and photocurrent densities, and on the internal quantum yield is studied. This study is carried out using polychromatic illumination with ultraviolet, visible and infrared wavelengths.
Heterojunction (HIT), Temperature, Excitons, Spectral Response, Quantum Performance
To cite this article
Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons, International Journal of Materials Science and Applications. Special Issue: Advanced Materials for Energy Storage and Conversion Applications.
Vol. 8, No. 4,
2019, pp. 56-67.
Copyright © 2019 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/
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M. Faye, M. Niane, S. Ndiaye, O. Ngom, C. Mbow, B. Ba; Numerical Modeling of Effects of Excitons on Photoelectric Properties of Cells; Journal of Scientific and Engineering Research volume 6 (6) (2019) 138-146.
M. Burgelman and B. Minnaert; Including excitons in semiconductor solar cell modelling; Thin Solid Films 511-512, 214-218 (2006).
S. Zh. Karazhanov; Temperature and doping level dependence solar cell performance Including excitons. Solar Energy Materials & Solar Cells 63 (2000) 149-163.
M. Faye, C. Mbow, B. Ba; Internal Electric Field In The Space Charge Layer Of A Solar Cell Based On Silicon In The Presence Of Excitons; International journal of scientific & technology research volume 4 (2015) 66-69.
M. Faye, M. Niane, S. Ndiaye, C. Mbow, B. Ba; Effects of Variability of The Average Temperature on The Distribution of Electrons and of Excitons in A Semiconductor; Journal of Materials Science & Surface Engineering; volume 4 (7) (2016) 467-471.
A. Armin, D. M. Stoltzfus, J. E. Donaghey, A. J. Clulow, R. C. R. Nagiri, P. L. Burn, I. R. Gentle and P. Meredith; Engineering dielectric constants in organic semiconductors; The Royal Society of Chemistry (2017).
N. Hiroshiba, K. Morimoto, R. Hayakawa, Y. Wakayama, T. Mori, and K. Matsuishi; Exciton dynamics at the heteromolecular interface between N, N’-dioctyl-3,4,9,10-perylenedicarboxilimide and quaterrylene studied using time-resolved photoluminescence; AIP ADVANCES 4, 067112 (2014).
Oleksandr V. Mikhnenko, Paul W. M. Blom, Thuc-Quyen Nguyen; Exciton Diffusion in Organic Semiconductors; Energy & Environmental Science 1-64 (2015).
M. K. Riede, T. Mueller, B. Maennig, K. Leo, K. O. Sylvester-Hvid, B. Zimmermann, M. Niggemann and A. Gombert; Comment on “Roles of donor and acceptor nanodomains in 6% efficient thermally annealed polymer photovoltaics”; Appl. Phys. Lett. 90, 163511 (2007).
S. Blumstengel, S. Sadofev, C. Xu, J. Puls, and F. Henneberger; Converting Wannier into Frenkel Excitons in an Inorganic/Organic Hybrid Semiconductor Nanostructure; Physical review letters; PRL 97, 237401 (2006).
Hangleiter, R. Hacker; Enhancement of band-to-band Auger recombination by electron-hole correlations; Phys. Rev. Lett. 65, 215 (1990).
Patankar, S. V.; Numerical Heat Transfer and Fluid Flow. Hemi- sphere Publishing Corporation, Taylor and Francis Group, New York 1980.
C. Klingshirn, H. Kalt, M. Umlauff, W. Petri, F. A. Majumder, S. V. Bogdanov, W. Langbein, M. Grün, M. Hetterich, K. P. Geyzers, M. Heuken, A. Naumov, H. Stanzl, W. Gebhardt, “Stimulated emission of II–VI epitaxial layers”, J. Cryst. Growth 138, 786, (1994) p. 786-790.
D. C. Reynolds, C. W. Litton, T. C. Collins, “Zeeman effects in the edge emission and absorption of ZnO”, Phys. Rev. 140, A1726, (1965) 1726-1734.
J. M. Hvam, “Exciton–exciton interaction and laser emission in high–purity ZnO”, Solid State Commun. 12, 95–97, (1973).