Simulation of Single-Diode Equivalent Model of Polycrystalline Silicon Solar Cells
International Journal of Materials Science and Applications
Volume 7, Issue 1-1, January 2018, Pages: 8-10
Received: Aug. 29, 2017;
Accepted: Aug. 30, 2017;
Published: Aug. 31, 2017
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Beddiaf Zaidi, Department of Physics, Faculty of Matter Sciences, University of Batna 1, Batna, Algeria
Izzeddine Saouane, Laboratoire De Physique Énergétique, Faculté Des Sciences, Université des Frères Mentouri /1, Constantine, Algérie
Chander Shekhar, Department of Applied Physics, Amity University Haryana, Gurgaon, India
A solar module is composed of photons of different energies, and some are absorbed at the p-n junction. A single-diode equivalent model is used to describe the electronic properties of solar cells. The theory as well as the construction and working of photovoltaic cells using single-diode method are also presented. So, choosing a electrical equivalent model can is based on area in which we would like to realize for study of solar cell characteristics. Parameters solar cell (Short-Circuit Current, Open-Circuit Voltage) are changed due to changing the light intensity and temperature. In the current paper we present the effect of temperature, series resistance and shunt resistance on the (P-V) characteristics simulated in Matlab/Simulink.
Simulation of Single-Diode Equivalent Model of Polycrystalline Silicon Solar Cells, International Journal of Materials Science and Applications. Special Issue: Energy and Materials II.
Vol. 7, No. 1-1,
2018, pp. 8-10.
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