High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3
International Journal of Materials Science and Applications
Volume 3, Issue 5, September 2014, Pages: 177-182
Received: Aug. 17, 2014; Accepted: Sep. 6, 2014; Published: Sep. 20, 2014
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Dohyung Kim, Graduate School of Advanced Technology and Science, Tokushima University, Tokushima, Japan
Heesub Lee, Epitaxy Research Team, Seoul Viosys corporation, Kyunggi-do, Republic of Korea
Yoshiki Naoi, Institutes of Technology and Science, Tokushima University, Tokushima, Japan
Shiro Sakai, Institutes of Technology and Science, Tokushima University, Tokushima, Japan
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The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.
AlGaN Diffusion, MOVPE, Al4C3, High Temperature
To cite this article
Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai, High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3, International Journal of Materials Science and Applications. Vol. 3, No. 5, 2014, pp. 177-182. doi: 10.11648/j.ijmsa.20140305.18
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