High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3
International Journal of Materials Science and Applications
Volume 3, Issue 5, September 2014, Pages: 177-182
Received: Aug. 17, 2014; Accepted: Sep. 6, 2014; Published: Sep. 20, 2014
Views 3170      Downloads 184
Authors
Dohyung Kim, Graduate School of Advanced Technology and Science, Tokushima University, Tokushima, Japan
Heesub Lee, Epitaxy Research Team, Seoul Viosys corporation, Kyunggi-do, Republic of Korea
Yoshiki Naoi, Institutes of Technology and Science, Tokushima University, Tokushima, Japan
Shiro Sakai, Institutes of Technology and Science, Tokushima University, Tokushima, Japan
Article Tools
Follow on us
Abstract
The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.
Keywords
AlGaN Diffusion, MOVPE, Al4C3, High Temperature
To cite this article
Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai, High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3, International Journal of Materials Science and Applications. Vol. 3, No. 5, 2014, pp. 177-182. doi: 10.11648/j.ijmsa.20140305.18
References
[1]
H. Sato, H. Wang, D. Sato, R. Takaki, N. Wada, T. Tanahashi, K. Yamashita, S. Kawano, T. Mizobuchi, A. Dempo, K. Morioka, M. Kimura, S. Nohda, T. Sugahara and S. Sakai, “High efficiency AlGaInN-based light emitting diode in the 360-380 nm wavelength range,” Phys. Stat. Sol. (a) 200, p. 102, 2003.
[2]
Y. Muramoto, M. Kimura and S. Nouda, “Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp,” Semicond. Sci. Technol. 29, p. 084004, 2014
[3]
M. Katsuragawa. S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189/190, P. 528. 1998.
[4]
D. S. Green, U. K. Mishra and J. S. Speck, “Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy,” J. Appl. Phys 95, p. 8456, 2004.
[5]
A. F. Wright, “Substitutional and interstitial carbon in wurtzite GaN,” J. Appl. Phys 92, p. 2575, 2002.
[6]
J. L. Lyons, A. Janotti, C. G. Van de walle, “Carbon impurities and the yellow luminescence in GaN,” Appl. Phys. Lett 97, P. 152108, 2010.
[7]
D. J. As, E. Tschumak, H. Pöttgen, O. Kasdorf, J. W. Gerlach, H. Karl and K. Lischka, “Carbon doping of non-polar cubic GaN by CBr4,” J. Cryst. Growth 311, p. 2039, 2009.
[8]
N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi and N. Sawaki, “Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy,” J. Appl. Phys. 45, p.7655, 2006.
[9]
H. Kawanishi and T. Tomizawa, “Carbon-doped p-type (0001) plane AlGaN (Al=6-55%) with high hole density,” Phys. Stat. Sol. (b) 249, p. 459, 2012.
[10]
F. Horie, Y. Onishi, Y. Naoi and S. Sakai, “Heterostructure Formation on AlC/Sapphire Substrate Which Emits at Wavelength of 330 nm.” Ext. Abstract, the 30th Electronic Materials Symp.,Th2-16, Shiga, June 2011.
[11]
Y. Onishi, D. Kim and S. Sakai, “Growth of AlC on Sapphire, Silicon and SiC substrate,” Ext. Abstract, the 31th Electronic Materials Symp.,We2-5, Izu, July 2012.
[12]
S. Wada and S. Sakai, “Optimum temperature to grow nano-AlC on sapphire by metalorganic chemical vapor deposition,” the 4th Int. Symp. Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials, P3069B, Aichi, March 2012.
[13]
D. Kim, Y. Onishi, R. Oki and S. Sakai, “Photo-induced current and its degradation in Al4C3/Al2O3 (0001) grown by metalorganic chemical vapor deposition,” Thin Solid Films 557, p. 216, 2014.
[14]
Y. Ozcatalbas, “Investigation of the machinability behaviour of Al4C3 reinforced Al-based composite produced by mechanical alloying technique,” Composite Science and Technology 63, p. 53, 2003.
[15]
D. Kim, H. Lee, K. Yamazumi, Y. Naoi and Shiro Sakai, “Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al4C3,” J. Appl. Phys. 52, p. 08JG18, 2013.
[16]
R. G. Banal, M. Funato and Y. Kawakami, “Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy,” Phys. Stat. Solid (c) 7, p.2111, 2010.
[17]
B. Arnaudov, T. Paskova, S. Evtimova, E. Valcheva, M. Heuken and B. Monemar, “Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity,” Phys. Rev. B 67, p.045314, 2003.
[18]
S. Nakamura and G. Fasol, “The Blue Laser Diode,” Springer, New York, p. 113, 1997.
[19]
M. Arita, S. Kako, S. Iwamoto and Y. Arakawa, “Fabrication of AlGaN Two-Dimensional Photonic Crystal Nanocavities by Selective Thermal Decomposition of GaN,” Appl. Phys. Express 5, p. 126502, 2012.
[20]
A. S. Grove, “Physics and Technology of Semiconductor Devices,” Wiley, New YorK, p.43, 1967.
[21]
H. Carter, G. Gildenblat, S. Nakamura and J. Nemanich, “Diamond, SiC and Nitride Wide Bandgap Semiconductor,” Material Research Society, Pennsylvania, p. 459, 1994.
[22]
C. Qiu and R. Metselaar, “Phase Relations in the Aluminum Carbide-Aluminum Nitride-Aluminum Oxide System,” J. Am. Ceram. Soc 80, p. 21013, 1997.
ADDRESS
Science Publishing Group
1 Rockefeller Plaza,
10th and 11th Floors,
New York, NY 10020
U.S.A.
Tel: (001)347-983-5186