International Journal of Materials Science and Applications

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Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode

Received: 5 August 2016    Accepted:     Published: 8 August 2016
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Abstract

We successfully developed a new transmission-type GaAs/GaAsP strained superlattice photocathode with an AlGaAs transparent inter-layer and Si3N4 anti-reflection coating. The electrons emitted from this photocathode showed a high spin polarization of 90% with a quantum efficiency as high as 0.4%. In the application for spin-polarized low energy electron microscope, a high emission current of over 1 µA was observed at 3.6 mW pump laser power. Transmission electron microscopy observation revealed that there were a small disorder and some dislocations in the GaAs/GaAsP superlattice layers. The disordered superlattice layers result in a fluctuation of the superlattice band structure and the dislocations trap the photo-electrons during the diffusion to the surface. Both of the defects influenced the performance of spin-polarized photocathode.

DOI 10.11648/j.ijmsa.20160504.11
Published in International Journal of Materials Science and Applications (Volume 5, Issue 4, July 2016)
Page(s) 178-182
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Spin Polarization, Photocathode, Superlattice, Microscopy

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Cite This Article
  • APA Style

    Xiuguang Jin, Fumiaki Ichihashi, Atsushi Mano, Masahiko Suzuki, Tsuneo Yasue, et al. (2016). Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. International Journal of Materials Science and Applications, 5(4), 178-182. https://doi.org/10.11648/j.ijmsa.20160504.11

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    ACS Style

    Xiuguang Jin; Fumiaki Ichihashi; Atsushi Mano; Masahiko Suzuki; Tsuneo Yasue, et al. Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. Int. J. Mater. Sci. Appl. 2016, 5(4), 178-182. doi: 10.11648/j.ijmsa.20160504.11

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    AMA Style

    Xiuguang Jin, Fumiaki Ichihashi, Atsushi Mano, Masahiko Suzuki, Tsuneo Yasue, et al. Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. Int J Mater Sci Appl. 2016;5(4):178-182. doi: 10.11648/j.ijmsa.20160504.11

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  • @article{10.11648/j.ijmsa.20160504.11,
      author = {Xiuguang Jin and Fumiaki Ichihashi and Atsushi Mano and Masahiko Suzuki and Tsuneo Yasue and Takanori Koshikawa and Yoshikazu Takeda},
      title = {Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode},
      journal = {International Journal of Materials Science and Applications},
      volume = {5},
      number = {4},
      pages = {178-182},
      doi = {10.11648/j.ijmsa.20160504.11},
      url = {https://doi.org/10.11648/j.ijmsa.20160504.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160504.11},
      abstract = {We successfully developed a new transmission-type GaAs/GaAsP strained superlattice photocathode with an AlGaAs transparent inter-layer and Si3N4 anti-reflection coating. The electrons emitted from this photocathode showed a high spin polarization of 90% with a quantum efficiency as high as 0.4%. In the application for spin-polarized low energy electron microscope, a high emission current of over 1 µA was observed at 3.6 mW pump laser power. Transmission electron microscopy observation revealed that there were a small disorder and some dislocations in the GaAs/GaAsP superlattice layers. The disordered superlattice layers result in a fluctuation of the superlattice band structure and the dislocations trap the photo-electrons during the diffusion to the surface. Both of the defects influenced the performance of spin-polarized photocathode.},
     year = {2016}
    }
    

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  • TY  - JOUR
    T1  - Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode
    AU  - Xiuguang Jin
    AU  - Fumiaki Ichihashi
    AU  - Atsushi Mano
    AU  - Masahiko Suzuki
    AU  - Tsuneo Yasue
    AU  - Takanori Koshikawa
    AU  - Yoshikazu Takeda
    Y1  - 2016/08/08
    PY  - 2016
    N1  - https://doi.org/10.11648/j.ijmsa.20160504.11
    DO  - 10.11648/j.ijmsa.20160504.11
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 178
    EP  - 182
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20160504.11
    AB  - We successfully developed a new transmission-type GaAs/GaAsP strained superlattice photocathode with an AlGaAs transparent inter-layer and Si3N4 anti-reflection coating. The electrons emitted from this photocathode showed a high spin polarization of 90% with a quantum efficiency as high as 0.4%. In the application for spin-polarized low energy electron microscope, a high emission current of over 1 µA was observed at 3.6 mW pump laser power. Transmission electron microscopy observation revealed that there were a small disorder and some dislocations in the GaAs/GaAsP superlattice layers. The disordered superlattice layers result in a fluctuation of the superlattice band structure and the dislocations trap the photo-electrons during the diffusion to the surface. Both of the defects influenced the performance of spin-polarized photocathode.
    VL  - 5
    IS  - 4
    ER  - 

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Author Information
  • Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan

  • Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan

  • Synchrotron Radiation Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan

  • Fundamental Electronics Research Institute, Osaka Electro-Communication University, Neyagawa, Osaka, Japan

  • Fundamental Electronics Research Institute, Osaka Electro-Communication University, Neyagawa, Osaka, Japan

  • Fundamental Electronics Research Institute, Osaka Electro-Communication University, Neyagawa, Osaka, Japan

  • Aichi Synchrotron Radiation Center, Seto, Japan

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