Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s
International Journal of Materials Science and Applications
Volume 2, Issue 2, March 2013, Pages: 43-46
Received: Mar. 10, 2013;
Published: Mar. 10, 2013
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Bablu K. Ghosh, Dept. of Electrical and Electronic Eng.,Univeristi Malaysia, sabahUniversity, Jalan UMS 88400 ,Kota-kinabalu, Sabah, Malaysia
Ismail Saad, Dept. of Electrical and Electronic Eng.,Univeristi Malaysia, sabahUniversity, Jalan UMS 88400 ,Kota-kinabalu, Sabah, Malaysia
Akio Yamamoto, Dept. of Electrical & Electronic Eng., Fukui University, Bunkyo 3-9-1, Fukui 910-8507, Japan
The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm) GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found. Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.
Bablu K. Ghosh,
Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s, International Journal of Materials Science and Applications.
Vol. 2, No. 2,
2013, pp. 43-46.
S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai, Jpn. J. Appl. Phys. 34, L1332 (1995).
R. M. Swanson, "The Promise of Concentrators," Progress in Photovoltaics: Res. Appl. 8, pp. 93-111 (2000).
Akio Yamamoto*, Md. R. Islam, Ting-Ting Kang, and Akihiro Hashimoto, Phys. Status Solidi C 7, No. 5 (2010)
D. Wang, S. Yoshida, Y. Hiroyama, M. Ichikawa, IPAP Conf. Series 1 (2000) 355.
N.P. Kobayashi, J.T. Kobayashi, W. Choi, P.D. Dapkus, X. Zhang, D.H. Rich, J. Crystal Growth 189/190 (1998) 172.
P. Javorka, A. Alam, M. Marso, M. Wolter, A. Fox, M. Heuken and P. Kordos, Phys. Stat. sol. (a) 194, No. 2, 472 (2002).
S. Zamir, B. Meyler and J. Salzman, Appl. Phys.Lett.78, 288 (2001).
B.K. Ghosh, T. Tanikawa, A. Hashimoto, A.Yamamotoand Y. Ito, J. Cryst growth, 249 , 422 (2003) .
A. Yamamoto, T. Yamauchi, T. Tanikawa, M. Sasase, B.K. Ghosh, A. Hashimoto, and Y. Ito, J. Cryst growth, 261, 266 (2004) .
M. E. Jones, J. R. Shealy and J. R. Engstrom, Appl. Phys. Lett., 67, 542 (1995).
H.M. Liaw, R. Venugopal, J. Wan, R. Doyle, P.L. Fejes and M.R Melloch, Sol. Stat. Electro., 44, 685 (2000) .
E. Iliopoulos, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, Appl. Phys. Lett. 73(1998)375.