International Journal of Materials Science and Applications

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Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s

Received: 10 March 2013    Accepted:     Published: 10 March 2013
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Abstract

The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm) GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found. Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.

DOI 10.11648/j.ijmsa.20130202.12
Published in International Journal of Materials Science and Applications (Volume 2, Issue 2, March 2013)
Page(s) 43-46
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Wide band gap, UV detector, RF power electronics, Optoelectronics, Photoluminescence, h-GaN, iso-electronic, Ohmic contact

References
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Author Information
  • Dept. of Electrical and Electronic Eng.,Univeristi Malaysia, sabahUniversity, Jalan UMS 88400 ,Kota-kinabalu, Sabah, Malaysia

  • Dept. of Electrical and Electronic Eng.,Univeristi Malaysia, sabahUniversity, Jalan UMS 88400 ,Kota-kinabalu, Sabah, Malaysia

  • Dept. of Electrical & Electronic Eng., Fukui University, Bunkyo 3-9-1, Fukui 910-8507, Japan

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    Bablu K. Ghosh, Ismail Saad, Akio Yamamoto. (2013). Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. International Journal of Materials Science and Applications, 2(2), 43-46. https://doi.org/10.11648/j.ijmsa.20130202.12

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    ACS Style

    Bablu K. Ghosh; Ismail Saad; Akio Yamamoto. Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. Int. J. Mater. Sci. Appl. 2013, 2(2), 43-46. doi: 10.11648/j.ijmsa.20130202.12

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    AMA Style

    Bablu K. Ghosh, Ismail Saad, Akio Yamamoto. Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. Int J Mater Sci Appl. 2013;2(2):43-46. doi: 10.11648/j.ijmsa.20130202.12

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  • @article{10.11648/j.ijmsa.20130202.12,
      author = {Bablu K. Ghosh and Ismail Saad and Akio Yamamoto},
      title = {Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s},
      journal = {International Journal of Materials Science and Applications},
      volume = {2},
      number = {2},
      pages = {43-46},
      doi = {10.11648/j.ijmsa.20130202.12},
      url = {https://doi.org/10.11648/j.ijmsa.20130202.12},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ijmsa.20130202.12},
      abstract = {The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm)  GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found.  Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.},
     year = {2013}
    }
    

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  • TY  - JOUR
    T1  - Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s
    AU  - Bablu K. Ghosh
    AU  - Ismail Saad
    AU  - Akio Yamamoto
    Y1  - 2013/03/10
    PY  - 2013
    N1  - https://doi.org/10.11648/j.ijmsa.20130202.12
    DO  - 10.11648/j.ijmsa.20130202.12
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 43
    EP  - 46
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20130202.12
    AB  - The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm)  GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found.  Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.
    VL  - 2
    IS  - 2
    ER  - 

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