Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness

Mohammad Faruk Hossain; Mohammad Shahidullah Kayser; Mohammad Sarwar Pervez; Mohammad Ariful Islam Nahid

doi:doi:10.11648/j.ijhep.20170403.12

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Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness

Mohammad Faruk Hossain, Mohammad Shahidullah Kayser, Mohammad Sarwar Pervez, Mohammad Ariful Islam Nahid

Published in International Journal of High Energy Physics (Volume 4, Issue 3)

Received: 27 July 2017 Accepted: 17 August 2017 Published: 18 September 2017

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Abstract

The fabrication of the Co/ZnO multilayer thin film for studying the influence of thermal annealing on optical and electrical properties is presented in this paper. In this case, at first Co/ZnO multilayer films were prepared by e-beam evaporation in a vacuum at a pressure of 3.2×10^-5 torr. In the multilayer, the thickness of Co and ZnO was kept same. Each layer thickness was varied from 5 nm to 15 nm and repeated three times. The deposition rate of the Co and ZnO thin films are about 1.33 nm/s & 1.43 nm/s respectively. The optical and electrical properties of the deposited and annealed Co/ZnO films had been studied. The average transparency of Co/ZnO multilayer thin film is roughly about 55% and decreased with increasing film thickness and increased when annealed. The T. C. R. of deposited and annealed Co/ZnO multilayer thin films in all cases is negative which indicates that the thin films are semiconducting in nature.

Published in	International Journal of High Energy Physics (Volume 4, Issue 3)
DOI	10.11648/j.ijhep.20170403.12
Page(s)	32-35
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Co, ZnO, E-Beam, Multilayer, Optical Properties, Electrical Properties, Thickness

References

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Mohammad Faruk Hossain, Mohammad Shahidullah Kayser, Mohammad Sarwar Pervez, Mohammad Ariful Islam Nahid. (2017). Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness. International Journal of High Energy Physics, 4(3), 32-35. https://doi.org/10.11648/j.ijhep.20170403.12

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ACS Style

Mohammad Faruk Hossain; Mohammad Shahidullah Kayser; Mohammad Sarwar Pervez; Mohammad Ariful Islam Nahid. Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness. Int. J. High Energy Phys. 2017, 4(3), 32-35. doi: 10.11648/j.ijhep.20170403.12

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AMA Style

Mohammad Faruk Hossain, Mohammad Shahidullah Kayser, Mohammad Sarwar Pervez, Mohammad Ariful Islam Nahid. Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness. Int J High Energy Phys. 2017;4(3):32-35. doi: 10.11648/j.ijhep.20170403.12

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@article{10.11648/j.ijhep.20170403.12,
  author = {Mohammad Faruk Hossain and Mohammad Shahidullah Kayser and Mohammad Sarwar Pervez and Mohammad Ariful Islam Nahid},
  title = {Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness},
  journal = {International Journal of High Energy Physics},
  volume = {4},
  number = {3},
  pages = {32-35},
  doi = {10.11648/j.ijhep.20170403.12},
  url = {https://doi.org/10.11648/j.ijhep.20170403.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijhep.20170403.12},
  abstract = {The fabrication of the Co/ZnO multilayer thin film for studying the influence of thermal annealing on optical and electrical properties is presented in this paper. In this case, at first Co/ZnO multilayer films were prepared by e-beam evaporation in a vacuum at a pressure of 3.2×10-5 torr. In the multilayer, the thickness of Co and ZnO was kept same. Each layer thickness was varied from 5 nm to 15 nm and repeated three times. The deposition rate of the Co and ZnO thin films are about 1.33 nm/s & 1.43 nm/s respectively. The optical and electrical properties of the deposited and annealed Co/ZnO films had been studied. The average transparency of Co/ZnO multilayer thin film is roughly about 55% and decreased with increasing film thickness and increased when annealed. The T. C. R. of deposited and annealed Co/ZnO multilayer thin films in all cases is negative which indicates that the thin films are semiconducting in nature.},
 year = {2017}
}

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TY - JOUR
T1 - Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness
AU - Mohammad Faruk Hossain
AU - Mohammad Shahidullah Kayser
AU - Mohammad Sarwar Pervez
AU - Mohammad Ariful Islam Nahid
Y1 - 2017/09/18
PY - 2017
N1 - https://doi.org/10.11648/j.ijhep.20170403.12
DO - 10.11648/j.ijhep.20170403.12
T2 - International Journal of High Energy Physics
JF - International Journal of High Energy Physics
JO - International Journal of High Energy Physics
SP - 32
EP - 35
PB - Science Publishing Group
SN - 2376-7448
UR - https://doi.org/10.11648/j.ijhep.20170403.12
AB - The fabrication of the Co/ZnO multilayer thin film for studying the influence of thermal annealing on optical and electrical properties is presented in this paper. In this case, at first Co/ZnO multilayer films were prepared by e-beam evaporation in a vacuum at a pressure of 3.2×10-5 torr. In the multilayer, the thickness of Co and ZnO was kept same. Each layer thickness was varied from 5 nm to 15 nm and repeated three times. The deposition rate of the Co and ZnO thin films are about 1.33 nm/s & 1.43 nm/s respectively. The optical and electrical properties of the deposited and annealed Co/ZnO films had been studied. The average transparency of Co/ZnO multilayer thin film is roughly about 55% and decreased with increasing film thickness and increased when annealed. The T. C. R. of deposited and annealed Co/ZnO multilayer thin films in all cases is negative which indicates that the thin films are semiconducting in nature.
VL - 4
IS - 3
ER -

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Author Information

Mohammad Faruk Hossain

Department of Physics, Rajshahi University of Engineering and Technology, Rajshahi, Bangladesh
Mohammad Shahidullah Kayser

Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi, Bangladesh
Mohammad Sarwar Pervez

Department of Natural Science, Varendra University, Rajshahi, Bangladesh
Mohammad Ariful Islam Nahid

Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi, Bangladesh

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Mohammad Faruk Hossain, Mohammad Shahidullah Kayser, Mohammad Sarwar Pervez, Mohammad Ariful Islam Nahid. (2017). Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness. International Journal of High Energy Physics, 4(3), 32-35. https://doi.org/10.11648/j.ijhep.20170403.12

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Mohammad Faruk Hossain; Mohammad Shahidullah Kayser; Mohammad Sarwar Pervez; Mohammad Ariful Islam Nahid. Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness. Int. J. High Energy Phys. 2017, 4(3), 32-35. doi: 10.11648/j.ijhep.20170403.12

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AMA Style

Mohammad Faruk Hossain, Mohammad Shahidullah Kayser, Mohammad Sarwar Pervez, Mohammad Ariful Islam Nahid. Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness. Int J High Energy Phys. 2017;4(3):32-35. doi: 10.11648/j.ijhep.20170403.12

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@article{10.11648/j.ijhep.20170403.12,
  author = {Mohammad Faruk Hossain and Mohammad Shahidullah Kayser and Mohammad Sarwar Pervez and Mohammad Ariful Islam Nahid},
  title = {Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness},
  journal = {International Journal of High Energy Physics},
  volume = {4},
  number = {3},
  pages = {32-35},
  doi = {10.11648/j.ijhep.20170403.12},
  url = {https://doi.org/10.11648/j.ijhep.20170403.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijhep.20170403.12},
  abstract = {The fabrication of the Co/ZnO multilayer thin film for studying the influence of thermal annealing on optical and electrical properties is presented in this paper. In this case, at first Co/ZnO multilayer films were prepared by e-beam evaporation in a vacuum at a pressure of 3.2×10-5 torr. In the multilayer, the thickness of Co and ZnO was kept same. Each layer thickness was varied from 5 nm to 15 nm and repeated three times. The deposition rate of the Co and ZnO thin films are about 1.33 nm/s & 1.43 nm/s respectively. The optical and electrical properties of the deposited and annealed Co/ZnO films had been studied. The average transparency of Co/ZnO multilayer thin film is roughly about 55% and decreased with increasing film thickness and increased when annealed. The T. C. R. of deposited and annealed Co/ZnO multilayer thin films in all cases is negative which indicates that the thin films are semiconducting in nature.},
 year = {2017}
}

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