Science Journal of Chemistry
Volume 8, Issue 4, August 2020, Pages: 77-80
Received: Mar. 19, 2020;
Accepted: Apr. 24, 2020;
Published: Sep. 14, 2020
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Elchin Ahmed Kerimov, Department of Physics, Azerbaijan State Academy of Oil and Industry, Baku, Azerbaijan
Sevinj Nadir Musaeva, Department of Electrical Engineering and Electrical Equipment, Azerbaijan Technical University, Baku, Azerbaijan
The creation of high-quality high-speed semiconductor devices and integrated circuits requires the introduction of new materials into the technology for their manufacture. The most promising of them are silicides-silicon compounds with more electropositive elements. These compounds can be obtained as a result of a solid phase reaction at a temperature in the range of about one to half the melting point of this metal on an absolute scale. Silicides have a high conductivity of a metallic nature, high temperature stability, and surpass in these properties any heavily doped semiconductor layer. The use of polysilicon as a material for gates and connecting lines providing a layer resistance of 20 Ohms/□ allowed us to reduce the minimum dimensions of the elements of devices to 25 microns. Methods were proposed for the formation of silicide films, as well as technological processes necessary for the manufacture of semiconductor devices and microcircuits with their application, which allowed us to start developing devices with a minimum element size of 1 μm and to begin their industrial production. The stable and reliable characteristics of platinum-silicon silicide (PtSi-Si) contacts have led to the widespread use of silicides as materials for ohmic contacts, gates in metal-oxide-semiconductor (MIS)-transistors, materials for storing optical information, photodetectors operating in IR-spectral regions, etc. The Si-2p band has an asymmetric shape; the structure of valence states differs from metallic ones.
Elchin Ahmed Kerimov,
Sevinj Nadir Musaeva,
Physical Bases of Work of Photo Receivers Based on Silicides, Science Journal of Chemistry.
Vol. 8, No. 4,
2020, pp. 77-80.
Copyright © 2020 Authors retain the copyright of this article.
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Yeo Yee-Chia, King Tsu-Jae, Hu Chenming // Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology, Journal of applied physics, 2002, v. 92, No 12.
Yudasaka M., Zhang M., Jabs C. et al. Effect of an organic polymer in purification and cutting of single-wall carbon nanotubes // Appl. Phys. A. 2000, v. 71, No 4, p. 449-451.
Alemany L., Zhang L., Zeng L. et al. SolidState NMR Analysis of Fluorinated Single-Walled Carbon Nanotubes: Assessing the Extent of Fluorination // Chemistry of Materials. 2007, v. 19, No 4, p. 735-744.
Ando T. Theory of electronic states and transport in carbon nanotubes // Phys J. Sok. Japan. 2005, v. 74, p. 777.
Baca A. Fabrication of GaAs devices. London, United Kingdom: The Institution of Electrical Engineers, 2005, p. 350.
Balan N., Gruzdev A., Nevsky A. / Books of abstracts, International conference "Micro-and nanoelectronics 2005", October 3rd-7th, 2005, Moscow, Zvenigorod, Russia. p. 1–11.
Barrow J. Reducing Ground Bounce in DC-to-DC Converters—Some Grounding Essentials, Analog Dialogue. 2007, v. 41–2, p. 2–7.
Belin T., Epron F. Characterization methods of carbon nanotubes: a review // Materials Science and Engineering B. 2005, v. 119, No 2, p. 105-118.
Benton J., Kimerling L. Capacitance transient spectroscopy of trace contamination in silicon // J. Electrochem. Soc. 1982, v. 129, No 9, p. 2098-2102.
Bhattacharya P., Properties of III-V quantum wells and superlattices, U.S.A., 1996.
Brintlinger T., Chen Y., Durkop T., et al, Melingailis J. Rapid imaging of nanotubes on insulating substrates // Appl. Phys. Lett. 2002, v. 81, p. 2454-2456.
Bulusheva L., Okotrub A., Guesel A. et al. Molecular Nanostructures. XVII Int. Winterschool / Euroconf. on Electronic Properties of Novel Materials / Eds Kuzmany H., Fink J., Mehring M., Roth S. AIP Conf. Proc. 685, 2003, p. 108.
Chang C., Segmüller A. Huang H., et al. // Electrochem J. Soc. 1986, v. 133, № 6, p. 1256–1260.
Chen Y., Fitzgerald J., Chadderton L., Of Metastable and Nanocrystalline Materials. 1999, v. 2, No 6, p. 375-380.
Choi H., Ihm J., Louie S., et al, Phys. Rev. Lett. 84, 2000, p. 17-29.