Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method
Volume 7, Issue 1, June 2018, Pages: 32-37
Received: Jun. 24, 2018;
Accepted: Jul. 5, 2018;
Published: Jul. 31, 2018
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Phyoe Sandar Win, Department of Electronic Engineering, Mandalay Technological University, Mandalay, Myanmar
Kathy Kyaw Min, Department of Electronic Engineering, Mandalay Technological University, Mandalay, Myanmar
Hla Myo Tun, Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Zaw Min Naing, Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Win Khaing Moe, Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.
Phyoe Sandar Win,
Kathy Kyaw Min,
Hla Myo Tun,
Zaw Min Naing,
Win Khaing Moe,
Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method, Optics.
Vol. 7, No. 1,
2018, pp. 32-37.
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