Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

Arnob Islam; Saiful Islam

doi:doi:10.11648/j.ajop.20140203.14

| Peer-Reviewed

Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

Arnob Islam, Saiful Islam

Published in American Journal of Optics and Photonics (Volume 2, Issue 3)

Received: 29 June 2014 Accepted: 7 July 2014 Published: 20 July 2014

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.

Published in	American Journal of Optics and Photonics (Volume 2, Issue 3)
DOI	10.11648/j.ajop.20140203.14
Page(s)	37-44
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Diode Laser, VCSEL, MQW, DBR

References

[1]	N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. H. Hu, X. S. Liu, M.-J. Li, R. Bhat, and C. E. Zah,“Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD”, IEEE Journal Of Selected Topics In Quantum Electronics, Vol. 11, No. 5, September/October 2005, pp. 990-998.
[2]	Kenichi Iga,”Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution”, Japanese Journal of Applied Physics, Vol. 47, No. 1, 2008, pp. 1-10.
[3]	Z. Pan, L. H. Li, Y. W. Lin, B. Q. Sun, D. S. Jiang and W. K. Ge,”Conduction band offset and electron effective mass in GaInNAs/ GaAs quantum-well structures with low nitrogen concentration”, Applied Physics Letters Volume 78, Number 15, 9 April 2001, pp. 2217-2219.
[4]	Joachim Piprek, Manish Mehta, and Vijay Jayaraman,” Design and Optimization of High-Performance 1.3 μm VCSELs”, Physics and Simulation of Optoelectronic Devices XII, Proceedings of SPIE Vol. 5349, 2004, pp. 375-384.
[5]	J. C. L. Yong, Judy M. Rorison, and Ian H. White,”1.3-_m Quantum-Well InGaAsP, AlGaInAs, and InGaAsN Laser Material Gain: A Theoretical Study”, IEEE Journal of Quantum Electronics, Vol. 38, No. 12, December 2002, pp. 1553-1564.
[6]	S. R. Jin, S. J. Sweeney, S. Tomic, A. R. Adams, and H. Riechert, “Unusual increase of the Auger recombination current in 1.3 mm GaInNAs quantum well lasers under high pressure,” Appl. Phys. Lett., vol. 82, April 2003 pp. 2335-2337.
[7]	S. Lien Chuang, “Physics of Optoelectronic Devices,” 1995, Wiley-Interscience, p. 442.
[8]	J. Piprek, “Semiconductor optoelectronic devices: Introduction to Physics and Simulation,” 2003, Academic Press, pp. 24-26
[9]	P. Harrison, “Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures”, John Wiley & sons, West Sussex, 2009, pp. 17-70, 73-82.
[10]	P. S. Zory, “Quantum Well Lasers” Academic Press, London, 1993, pp. 28-41, 132-154.
[11]	S. R. Selmic, T. M. Chou, J. P. Sih, J. B. Kirk, A. Mantie, J. K. Butler, D. Bour, and G. A. Evans,“Design and characterization of 1.3-µm AlGaInAs-InP Multiple quantum well lasers,” IEEE Journal on Selected Topics in Quantum Electronics, Vol. 7, No. 2, March/April 2001, p. 342.
[12]	S. Adachi, “Properties of Semiconductor Alloys Group-IV, III-V, II-VI Semiconductor”, John Wiley & Sons, New York, 2009, pp. 133-214, 238-253, 277-286, 307-332.
[13]	I. Vurgaftman, J. R. Meyer and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys”, Journal of Applied Physics, Vol. 89, No. 11, 1 June 2001 Appl. Phys. Rev.: Vurgaftman, Meyer, and Ram-Mohan, pp. 5815-5875.
[14]	Vlad Badilita,” Study of Vertical Coupled-Cavity Laser Structures”, Doctor of Science Thesis, Institut de photonique et d'électronique quantiques, Physics Department, École Polytechnique Fédérale De Lausanne, Université de Bucarest, Roumanie et de nationalité Roumaine, 2004, p. 50.
[15]	L. A. Coldren and S. W. Corzine, “Diode Lasers and Photonic Integrated Ciruits”, John Wiley & Sons, N.Y., 1995, pp. 30-59, 186-250.
[16]	T. E. Sale, “Vertical Cavity Surface Emitting Lasers” John Wiley & Sons Inc., 1995, pp. 33-35.
[17]	J. Cheng, C. L. Shieh, X. D. Huang, G. L. Liu, M. V. R. Murty, C. C. Lin, and D. X. Xu., "Efficient long wavelength AlGaInAs vertical-cavity surface-emitting lasers for coarse WDM applications over multimode fibre." Electronics Letters, Vol. 40, No. 19, September 2004, pp 1184-1185.

Cite This Article

Plain Text BibTeX RIS

APA Style

Arnob Islam, Saiful Islam. (2014). Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. American Journal of Optics and Photonics, 2(3), 37-44. https://doi.org/10.11648/j.ajop.20140203.14

Copy | Download

ACS Style

Arnob Islam; Saiful Islam. Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. Am. J. Opt. Photonics 2014, 2(3), 37-44. doi: 10.11648/j.ajop.20140203.14

Copy | Download

AMA Style

Arnob Islam, Saiful Islam. Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. Am J Opt Photonics. 2014;2(3):37-44. doi: 10.11648/j.ajop.20140203.14

Copy | Download

@article{10.11648/j.ajop.20140203.14,
  author = {Arnob Islam and Saiful Islam},
  title = {Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR},
  journal = {American Journal of Optics and Photonics},
  volume = {2},
  number = {3},
  pages = {37-44},
  doi = {10.11648/j.ajop.20140203.14},
  url = {https://doi.org/10.11648/j.ajop.20140203.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20140203.14},
  abstract = {In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR
AU  - Arnob Islam
AU  - Saiful Islam
Y1  - 2014/07/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ajop.20140203.14
DO  - 10.11648/j.ajop.20140203.14
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 37
EP  - 44
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20140203.14
AB  - In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.
VL  - 2
IS  - 3
ER  -

Copy | Download

Author Information

Arnob Islam

Department of Electrical and Electronic Engineering, Northern University Bangladesh, Dhaka 1213, Bangladesh
Saiful Islam

Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1205, Bangladesh

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Arnob Islam, Saiful Islam. (2014). Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. American Journal of Optics and Photonics, 2(3), 37-44. https://doi.org/10.11648/j.ajop.20140203.14

Copy | Download

ACS Style

Arnob Islam; Saiful Islam. Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. Am. J. Opt. Photonics 2014, 2(3), 37-44. doi: 10.11648/j.ajop.20140203.14

Copy | Download

AMA Style

Arnob Islam, Saiful Islam. Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. Am J Opt Photonics. 2014;2(3):37-44. doi: 10.11648/j.ajop.20140203.14

Copy | Download

@article{10.11648/j.ajop.20140203.14,
  author = {Arnob Islam and Saiful Islam},
  title = {Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR},
  journal = {American Journal of Optics and Photonics},
  volume = {2},
  number = {3},
  pages = {37-44},
  doi = {10.11648/j.ajop.20140203.14},
  url = {https://doi.org/10.11648/j.ajop.20140203.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20140203.14},
  abstract = {In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR
AU  - Arnob Islam
AU  - Saiful Islam
Y1  - 2014/07/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ajop.20140203.14
DO  - 10.11648/j.ajop.20140203.14
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 37
EP  - 44
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20140203.14
AB  - In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.
VL  - 2
IS  - 3
ER  -

Copy | Download