Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution
American Journal of Optics and Photonics
Volume 5, Issue 5, October 2017, Pages: 50-54
Received: Oct. 25, 2017; Accepted: Nov. 3, 2017; Published: Dec. 18, 2017
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Authors
Alioune Aidara Diouf, Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal; Department of Nanoscience & Nanotechnology Research, Dakar American University of Science & Technology, Somone, Senegal
Bassirou Lo, Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal
Abel Sambou, Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal
Oumar Sakho, Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal
Aboubaker Chedikh Beye, Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal
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Abstract
The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.
Keywords
Exciton A, B and C, Gaussian Distribution, Reflectivity Spectrum, a-Plane Oriented ZnO
To cite this article
Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye, Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution, American Journal of Optics and Photonics. Vol. 5, No. 5, 2017, pp. 50-54. doi: 10.11648/j.ajop.20170505.11
Copyright
Copyright © 2017 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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