The effect of He-Ne (632.8 nm) and diode (650 nm) lasers on the electrical characteristics of silicon diode have been studied. The electrical characteristics of the diode were recorded before laser irradiations, then the diode is subjected to He-Ne laser for 5 and 10 minutes and then the diode electrical characteristics were recorded for each time of exposure and the same was done in the case of irradiation with diode laser. The electrical characteristics of the diode before and after laser irradiations were compared and thermal effect was noticed when compared the effect of lasers irradiation and the well known temperature effect on the electrical characteristics of the diode. It was found that the effect of the He-Ne (632.8 nm) and diode laser (650 nm) on the electrical characteristics of silicon diode at exposure time of 5 minutes were comparable but for 10 minutes of exposure the effect of He-Ne laser irradiation on the characteristics was different from that of diode laser and this is due to the fact that the two lasers has different properties.
| Published in | American Journal of Optics and Photonics (Volume 6, Issue 1) |
| DOI | 10.11648/j.ajop.20180601.12 |
| Page(s) | 8-13 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
He-Ne Laser, Diode Laser, Electrical Characteristics of Silicon Diode, Laser Modes of Interaction
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APA Style
Yousif Hassan Alsheikh Abd Alraheim, Zainab Abdulla Mohamed Taha, Zainab Mohamed Taha. (2018). The Effect of He-Ne and Diode Lasers on the Electrical Characteristics of Silicon Diode. American Journal of Optics and Photonics, 6(1), 8-13. https://doi.org/10.11648/j.ajop.20180601.12
ACS Style
Yousif Hassan Alsheikh Abd Alraheim; Zainab Abdulla Mohamed Taha; Zainab Mohamed Taha. The Effect of He-Ne and Diode Lasers on the Electrical Characteristics of Silicon Diode. Am. J. Opt. Photonics 2018, 6(1), 8-13. doi: 10.11648/j.ajop.20180601.12
AMA Style
Yousif Hassan Alsheikh Abd Alraheim, Zainab Abdulla Mohamed Taha, Zainab Mohamed Taha. The Effect of He-Ne and Diode Lasers on the Electrical Characteristics of Silicon Diode. Am J Opt Photonics. 2018;6(1):8-13. doi: 10.11648/j.ajop.20180601.12
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Download@article{10.11648/j.ajop.20180601.12,
author = {Yousif Hassan Alsheikh Abd Alraheim and Zainab Abdulla Mohamed Taha and Zainab Mohamed Taha},
title = {The Effect of He-Ne and Diode Lasers on the Electrical Characteristics of Silicon Diode},
journal = {American Journal of Optics and Photonics},
volume = {6},
number = {1},
pages = {8-13},
doi = {10.11648/j.ajop.20180601.12},
url = {https://doi.org/10.11648/j.ajop.20180601.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20180601.12},
abstract = {The effect of He-Ne (632.8 nm) and diode (650 nm) lasers on the electrical characteristics of silicon diode have been studied. The electrical characteristics of the diode were recorded before laser irradiations, then the diode is subjected to He-Ne laser for 5 and 10 minutes and then the diode electrical characteristics were recorded for each time of exposure and the same was done in the case of irradiation with diode laser. The electrical characteristics of the diode before and after laser irradiations were compared and thermal effect was noticed when compared the effect of lasers irradiation and the well known temperature effect on the electrical characteristics of the diode. It was found that the effect of the He-Ne (632.8 nm) and diode laser (650 nm) on the electrical characteristics of silicon diode at exposure time of 5 minutes were comparable but for 10 minutes of exposure the effect of He-Ne laser irradiation on the characteristics was different from that of diode laser and this is due to the fact that the two lasers has different properties.},
year = {2018}
}
TY - JOUR T1 - The Effect of He-Ne and Diode Lasers on the Electrical Characteristics of Silicon Diode AU - Yousif Hassan Alsheikh Abd Alraheim AU - Zainab Abdulla Mohamed Taha AU - Zainab Mohamed Taha Y1 - 2018/01/18 PY - 2018 N1 - https://doi.org/10.11648/j.ajop.20180601.12 DO - 10.11648/j.ajop.20180601.12 T2 - American Journal of Optics and Photonics JF - American Journal of Optics and Photonics JO - American Journal of Optics and Photonics SP - 8 EP - 13 PB - Science Publishing Group SN - 2330-8494 UR - https://doi.org/10.11648/j.ajop.20180601.12 AB - The effect of He-Ne (632.8 nm) and diode (650 nm) lasers on the electrical characteristics of silicon diode have been studied. The electrical characteristics of the diode were recorded before laser irradiations, then the diode is subjected to He-Ne laser for 5 and 10 minutes and then the diode electrical characteristics were recorded for each time of exposure and the same was done in the case of irradiation with diode laser. The electrical characteristics of the diode before and after laser irradiations were compared and thermal effect was noticed when compared the effect of lasers irradiation and the well known temperature effect on the electrical characteristics of the diode. It was found that the effect of the He-Ne (632.8 nm) and diode laser (650 nm) on the electrical characteristics of silicon diode at exposure time of 5 minutes were comparable but for 10 minutes of exposure the effect of He-Ne laser irradiation on the characteristics was different from that of diode laser and this is due to the fact that the two lasers has different properties. VL - 6 IS - 1 ER -
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