Pure and Gd-doped nano-crystalline GeSe2 were prepared by the melt-quenching technique. The crystal structure, local structure and emission properties are investigated. Structure analysis using Rietveld program suggests monoclinic structure for both virgin and doped samples with nano-particle size 41nm for GeSe2 and 48nm for Gd-doped sample. A wide optical band gap as estimated from absorbance measurements is 4.1ev and 4.8ev for pure and doped samples in accordance with the confinement effects. Raman spectra show two unresolved components at ~ 202 cm-1 with broad line width. Also, well identified low intensity (υ < 145 cm-1) and high intensity (υ > 250 cm-1) bands are detected. For Gd-doped sample, the main band is shifted to lower energies and its FWHM is reduced by ~ 50% accompanied by an intensity increase of about ~ 17 fold times. The photoluminescence analysis of the pure sample shows a main emission band at ~ 604 nm. This band is splitted into two separated bands with higher intensity. The detected emission bands at wavelength > 650 nm are assigned to transmission from 6GJ to the different 6PJ terms.
| DOI | 10.11648/j.ajop.20160405.11 |
| Published in | American Journal of Optics and Photonics (Volume 4, Issue 5, October 2016) |
| Page(s) | 40-45 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
Nano-Crystalline GeSe2Doped with Gd3+, Microstructure, Optical, Raman and Photoluminescence Characteristics
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APA Style
H. Hantour. (2016). First Investigation of Optical Properties and Local Structure of Gd3+ Doped Nano-Crystalline GeSe2. American Journal of Optics and Photonics, 4(5), 40-45. https://doi.org/10.11648/j.ajop.20160405.11
ACS Style
H. Hantour. First Investigation of Optical Properties and Local Structure of Gd3+ Doped Nano-Crystalline GeSe2. Am. J. Opt. Photonics 2016, 4(5), 40-45. doi: 10.11648/j.ajop.20160405.11
AMA Style
H. Hantour. First Investigation of Optical Properties and Local Structure of Gd3+ Doped Nano-Crystalline GeSe2. Am J Opt Photonics. 2016;4(5):40-45. doi: 10.11648/j.ajop.20160405.11
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Download@article{10.11648/j.ajop.20160405.11,
author = {H. Hantour},
title = {First Investigation of Optical Properties and Local Structure of Gd3+ Doped Nano-Crystalline GeSe2},
journal = {American Journal of Optics and Photonics},
volume = {4},
number = {5},
pages = {40-45},
doi = {10.11648/j.ajop.20160405.11},
url = {https://doi.org/10.11648/j.ajop.20160405.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20160405.11},
abstract = {Pure and Gd-doped nano-crystalline GeSe2 were prepared by the melt-quenching technique. The crystal structure, local structure and emission properties are investigated. Structure analysis using Rietveld program suggests monoclinic structure for both virgin and doped samples with nano-particle size 41nm for GeSe2 and 48nm for Gd-doped sample. A wide optical band gap as estimated from absorbance measurements is 4.1ev and 4.8ev for pure and doped samples in accordance with the confinement effects. Raman spectra show two unresolved components at ~ 202 cm-1 with broad line width. Also, well identified low intensity (υ < 145 cm-1) and high intensity (υ > 250 cm-1) bands are detected. For Gd-doped sample, the main band is shifted to lower energies and its FWHM is reduced by ~ 50% accompanied by an intensity increase of about ~ 17 fold times. The photoluminescence analysis of the pure sample shows a main emission band at ~ 604 nm. This band is splitted into two separated bands with higher intensity. The detected emission bands at wavelength > 650 nm are assigned to transmission from 6GJ to the different 6PJ terms.},
year = {2016}
}
TY - JOUR T1 - First Investigation of Optical Properties and Local Structure of Gd3+ Doped Nano-Crystalline GeSe2 AU - H. Hantour Y1 - 2016/11/29 PY - 2016 N1 - https://doi.org/10.11648/j.ajop.20160405.11 DO - 10.11648/j.ajop.20160405.11 T2 - American Journal of Optics and Photonics JF - American Journal of Optics and Photonics JO - American Journal of Optics and Photonics SP - 40 EP - 45 PB - Science Publishing Group SN - 2330-8494 UR - https://doi.org/10.11648/j.ajop.20160405.11 AB - Pure and Gd-doped nano-crystalline GeSe2 were prepared by the melt-quenching technique. The crystal structure, local structure and emission properties are investigated. Structure analysis using Rietveld program suggests monoclinic structure for both virgin and doped samples with nano-particle size 41nm for GeSe2 and 48nm for Gd-doped sample. A wide optical band gap as estimated from absorbance measurements is 4.1ev and 4.8ev for pure and doped samples in accordance with the confinement effects. Raman spectra show two unresolved components at ~ 202 cm-1 with broad line width. Also, well identified low intensity (υ < 145 cm-1) and high intensity (υ > 250 cm-1) bands are detected. For Gd-doped sample, the main band is shifted to lower energies and its FWHM is reduced by ~ 50% accompanied by an intensity increase of about ~ 17 fold times. The photoluminescence analysis of the pure sample shows a main emission band at ~ 604 nm. This band is splitted into two separated bands with higher intensity. The detected emission bands at wavelength > 650 nm are assigned to transmission from 6GJ to the different 6PJ terms. VL - 4 IS - 5 ER -
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