Advances in Materials
Volume 2, Issue 1, February 2013, Pages: 6-11
Received: Dec. 23, 2012;
Published: Feb. 20, 2013
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Bassam G. Rasheed, Applied sciences department, University of Technology, Baghdad - IRAQ
Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.
Bassam G. Rasheed,
Synthesis of Silicon Nanostructures: Comparative Study, Advances in Materials.
Vol. 2, No. 1,
2013, pp. 6-11.
L. Canham,"Silicon quantum wire array fabrication by elec-trochemical and chemical dissolution of wafers", Appl.Phys.Lett 57, 1990, pp. 1046.
G. John and V. Singh. Effective exponent for the size de-pendence of luminescence in semiconductor nanocrystallites" Phys. Rev., 263,1995, pp. 3.
A. Loni, L. Canham and P. Calcott. "Blue photoluminescence from rapid thermally oxidized porous silicon following storage in ambient air" J. Appl.Phys., 77, 1995, pp. H. Koyama,T. Nakagawa, T. Ozaki and N. Koshida "Post‐anodization filtered illumination of porous silicon in HF so-lutions: An effective method to improve luminescence prop-erties" Appl.Phys.Lett.,65,1994, pp. 1656.
L. Koker and K. Kolasiniski, "In situ photoluminescence studies of photochemically grown porous silicon", Mat.Sci. & Eng B. 69-70, 2000, pp.132.
M. Ngan, K. Lee and K. Cheah, "High power density laser etching of silicon" J.Appl.Phys.83, 1998, pp. 1637.
N. Noguchi and I. Suemune, "Selective formation of lumi-nescent porous silicon by photosynthesis" J.Appl.Phys., 75, 1994, pp. 4765.
K. Cheah, L. Ho and Q. Wang, "Luminescence centers in porous silicon" Appl. Phys.A, 76, 1995, pp. 601.
H. Mavi, B. Rasheed, A. Shukla, S. Abbi, and K. Jain, "Spectroscopic investigations of porous silicon prepared by laser-induced etching of silicon" J.Phys.D:Appl.Phys.34, 2001, 292.
E. Teo, B. Breese, A. Bettiol, D. Karasi, R. Chameaux, F. Watt, and D. Blackwood, "Multicolor Photoluminescence from Porous Silicon Using Focused, High-Energy Helium Ions" Adv. Mater, 18, 2006, pp. 51.
R. Prabakaran, R. Kesavamoorth, and A. Singh, "Optical and microstructural investigations of porous silicon" Mat. Sci. 28, 2005, pp. 219.
D. Riabinina, C. Durand, M. Chaker and F. Rosei, "Photo-luminescent silicon nanocrystals synthesized by reactive laser ablation" Appl.Phys.Lett,88, 2006, pp. 73105.
M. Beale, J. Benjamine and A. Cullis, "Microstructure and formation mechanism of porous silicon" Appl. Phys. Lett. 46, 1985, pp. 86.
F. Koch and P. Koch, "Light from Si-nanoparticle systems- a comprehensive view" J. Non-Crys. Solids, 198, 1996, pp. 840.
P. Deak, Z. Hajnal and D. Fuchs, "Correlation between the luminescence and Raman peaks in quantum-confined systems" Thin Solid Films, 255, 1995, pp. 241.
N. Mathews, P. Sebastian and V. Agrawal, "Photoelectro-chemical characterization of porous Si", Int.J.Hydr.Enegy, 28, 2003, pp. 629.
M. Thonissen, M. Berger and H. luth, "Preparation of thin porous silicon layers by stain etching" ,Thin solid Films 276, 1996, 21.
J. Van and H. Nabben, "Processing and Properties of Com-pound Semiconductors" J.Electrchem. Soc, 38, 1991, pp. 3401.
A. Abed and B. Rasheed, "Study the Effect of CO2 Laser Annealing on Silicon Nanostructures", Modern Applied Science, 4, 2010, pp. 56.
I. Campbell and P. Fauchet, "Raman Spectroscopy In Low-Dimensional Semiconductors", Solid State and Materials Sciences 14, 1988, pp.S79-S101.
H. Munder, C. Anderzejak and M. ligeon, "A detailed Raman study of porous silicon", Thin Solid Films, 221, 1992, pp. 27.