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Research of Voltage-Balancing Methods of Series-Connected IGBTs

Received: 18 October 2016    Accepted:     Published: 19 October 2016
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Abstract

Voltage-balancing method is the key to the application of series-connected Insulated-Gate Bipolar Transistor(IGBT). In this paper the voltage-balancing process is divided into 4 stages: dynamic turning-on process, dynamic turning-off process, the tail current state and steady state, whose voltage-balancing methods are then proposed respectively: gate compensation capacitor network for dynamic process; resistance capacitance(RC) voltage-balancing circuit designed for tail current state with the capacitance given by a formula; and parallel-connected voltage-balancing resistance for the steady state. Based on the work above, power module of two series-connected IGBTs is designed and tested under high voltage and high current condition. The result shows that under the series total voltage 2kV (1.85kV maximum peak voltage for each IGBT) and 2kA current, the power module balanced the voltage of the whole period of an turning on and off process, and both of the voltage-unbalance-rate of dynamic and steady state are less than 5%.

Published in Automation, Control and Intelligent Systems (Volume 4, Issue 5)
DOI 10.11648/j.acis.20160405.11
Page(s) 73-79
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

IGBT Series, Power Module, Dynamic Voltage Balancing, Tail Current

References
[1] S. Eicher, M. Rahimo, E. Tsyplakov, et al. 4.5kV press pack IGBT designed for ruggedness and reliability [C]. IEEE Industry Application Conference, 39th IAS Annual Meeting. 2004: 1534-1539.
[2] Dou Zechun, Rupert Stevens, XinLanyuan. et al. Design and characteristic analysis of novel press-contact IGBT module[J]. Electric Drive for Locomtives, 2013, 1(01): 10-13(in Chinese).
[3] Jin Rui, YuKunshan, Zhang Peng, et al. Development of IGBT devices and the typical application in the smart grid [J. Smart Grid, 2013, 01(02): 11-16(in Chinese).
[4] YU Hualong, LU Ting, JI Shiqi, YUAN Liqiang, ZHAO Zhengming. Active Clamping Circuit Threshold Voltage Design for Series-connected HVIGBTs [J]. Proceedings of the CSEE, 2016, 36(5): 1357-1365.
[5] Zhang Bingjing. Research on the unbalancing dynamic voltage of SerialPress-contact IGBT [D]. North China Electric Power University, 2014.03.
[6] Xingyu Li. The Research of Series Connected Diode Clamping IGBTEqualizing [D]. Beijing Institute of Technology, 2016.01.
[7] K. Sasagawa, Y. Abe, K. Matsuse. Voltage-blancing method for IGBTs connected in series [J]. IEEE Transactions on Industry Application, 2004, 40(4): 1025-1030.
[8] Ning Dalong, Tong Xiangqian, Li Xia, et al. Design of RCD Active Gate Control Circuit for Series Connected IGBTs [J]. Transaction of China Electrotechnical Society, 2013, 28(2): 192-198.
[9] Soonwook H, Chitta V, Torrey D A. Series Connection of IGBT’s with Active Voltage Balancing[J]. IEEE Transactions on Industrial Applications, 1999(35): 917-923.
[10] Consoli A, Musumeci S, Oriti G, et al. Active Voltage Balancement of Series Connected IGBTs [C]. Conference Record of the 30th IAS Annual Meeting, 1995, 13: 2752-2758.
[11] Patrick R Palmer, Enrico Santi, Jerry L Hudgins, et al. Circuit Simulator Models for the Diode and IGBT with Full Temperature Dependent Features [J]. IEEE Transactions on Power Electronics, 2003, 18(5): 1220-1229.
[12] Tong Xiangqian, Ning Dalong, Xia Wei, et al. Design of RCD Active Gate Control Circuit for Series Connected IGBTs [J]. Transaction of China Electrotechnical Society, 2013, 28(2): 192-198.
[13] Withanage R, Shammas N. Series Connection of Insulated Gate Bipolar Transistors [C]. Proceedings of European Power Electronics and Applications Conference, 2005: 10-19.
[14] PANG Hui, WEN Jialiang, HE Zhiyuan, et al. Unbalancing Voltage of High Power Series Connected IGBT Valve [J]. Proceeding of the CSEE, 2011, 31(21): 1-8.
[15] Petar J. Grobovic, An IGBT Gate Driver for Feed-Forward Control of Turn-on Losses and Reverse Recovery Current [J]. IEEE Transactions on power electronic, 2008, 23(02): 643-652.
[16] Igor Baraia, Jon Andoni Barrena, An Experimentally Verified Active Gate Control Method for the Series Connection of IGBT/Diodes [J]. IEEE transactions on power electronic, 2012, 27(02): 1025-1038.
[17] LIU Lei. Research on Voltage Balancing Techniques of Series-Connected IGBTs [D], Nanjing: Nanjing University of Aeronautics and Astronautics, 2009: 29-30.
[18] http://new.abb.com/semiconductors/insulated-gate-bipolar-transistor-(igbt)-and-diode-modules/stakpak.
Cite This Article
  • APA Style

    Lv Miao, Mei Guifang, Xu Guancheng, Dong Xiaoshuai. (2016). Research of Voltage-Balancing Methods of Series-Connected IGBTs. Automation, Control and Intelligent Systems, 4(5), 73-79. https://doi.org/10.11648/j.acis.20160405.11

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    ACS Style

    Lv Miao; Mei Guifang; Xu Guancheng; Dong Xiaoshuai. Research of Voltage-Balancing Methods of Series-Connected IGBTs. Autom. Control Intell. Syst. 2016, 4(5), 73-79. doi: 10.11648/j.acis.20160405.11

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    AMA Style

    Lv Miao, Mei Guifang, Xu Guancheng, Dong Xiaoshuai. Research of Voltage-Balancing Methods of Series-Connected IGBTs. Autom Control Intell Syst. 2016;4(5):73-79. doi: 10.11648/j.acis.20160405.11

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  • @article{10.11648/j.acis.20160405.11,
      author = {Lv Miao and Mei Guifang and Xu Guancheng and Dong Xiaoshuai},
      title = {Research of Voltage-Balancing Methods of Series-Connected IGBTs},
      journal = {Automation, Control and Intelligent Systems},
      volume = {4},
      number = {5},
      pages = {73-79},
      doi = {10.11648/j.acis.20160405.11},
      url = {https://doi.org/10.11648/j.acis.20160405.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.acis.20160405.11},
      abstract = {Voltage-balancing method is the key to the application of series-connected Insulated-Gate Bipolar Transistor(IGBT). In this paper the voltage-balancing process is divided into 4 stages: dynamic turning-on process, dynamic turning-off process, the tail current state and steady state, whose voltage-balancing methods are then proposed respectively: gate compensation capacitor network for dynamic process; resistance capacitance(RC) voltage-balancing circuit designed for tail current state with the capacitance given by a formula; and parallel-connected voltage-balancing resistance for the steady state. Based on the work above, power module of two series-connected IGBTs is designed and tested under high voltage and high current condition. The result shows that under the series total voltage 2kV (1.85kV maximum peak voltage for each IGBT) and 2kA current, the power module balanced the voltage of the whole period of an turning on and off process, and both of the voltage-unbalance-rate of dynamic and steady state are less than 5%.},
     year = {2016}
    }
    

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  • TY  - JOUR
    T1  - Research of Voltage-Balancing Methods of Series-Connected IGBTs
    AU  - Lv Miao
    AU  - Mei Guifang
    AU  - Xu Guancheng
    AU  - Dong Xiaoshuai
    Y1  - 2016/10/19
    PY  - 2016
    N1  - https://doi.org/10.11648/j.acis.20160405.11
    DO  - 10.11648/j.acis.20160405.11
    T2  - Automation, Control and Intelligent Systems
    JF  - Automation, Control and Intelligent Systems
    JO  - Automation, Control and Intelligent Systems
    SP  - 73
    EP  - 79
    PB  - Science Publishing Group
    SN  - 2328-5591
    UR  - https://doi.org/10.11648/j.acis.20160405.11
    AB  - Voltage-balancing method is the key to the application of series-connected Insulated-Gate Bipolar Transistor(IGBT). In this paper the voltage-balancing process is divided into 4 stages: dynamic turning-on process, dynamic turning-off process, the tail current state and steady state, whose voltage-balancing methods are then proposed respectively: gate compensation capacitor network for dynamic process; resistance capacitance(RC) voltage-balancing circuit designed for tail current state with the capacitance given by a formula; and parallel-connected voltage-balancing resistance for the steady state. Based on the work above, power module of two series-connected IGBTs is designed and tested under high voltage and high current condition. The result shows that under the series total voltage 2kV (1.85kV maximum peak voltage for each IGBT) and 2kA current, the power module balanced the voltage of the whole period of an turning on and off process, and both of the voltage-unbalance-rate of dynamic and steady state are less than 5%.
    VL  - 4
    IS  - 5
    ER  - 

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Author Information
  • Xi’an Xuji Power Electronic Technology Co. Ltd., Xi’an, China

  • Xi’an Xuji Power Electronic Technology Co. Ltd., Xi’an, China

  • Xi’an Xuji Power Electronic Technology Co. Ltd., Xi’an, China

  • Xi’an Xuji Power Electronic Technology Co. Ltd., Xi’an, China

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