SOI-Multi-FinFET was analyzed by a three-dimensional numerical device simulator and its electrical characteristics and potential distribution in the oxide and the silicon in the section perpendicular to the flow of the current were compared for single-fin, three-fin and five-fin FET to investigate the influence of fins number on corner effect in Dual-gate SOI Multi-FinFET, and we provide a comparison with a Tri-gate SOI Multi-FinFET structure.
| Published in | Science Journal of Circuits, Systems and Signal Processing (Volume 3, Issue 1) |
| DOI | 10.11648/j.cssp.20140301.11 |
| Page(s) | 1-4 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
SOI, Fin FET, Corner Effect, Dual-Gate, Tri-Gate, Multi-Fin FET
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APA Style
A.N. Moulai Khatir, A. Guen-Bouazza, B. Bouazza. (2014). Corner Effect in Multiplier SOI-Fin FETs. Science Journal of Circuits, Systems and Signal Processing, 3(1), 1-4. https://doi.org/10.11648/j.cssp.20140301.11
ACS Style
A.N. Moulai Khatir; A. Guen-Bouazza; B. Bouazza. Corner Effect in Multiplier SOI-Fin FETs. Sci. J. Circuits Syst. Signal Process. 2014, 3(1), 1-4. doi: 10.11648/j.cssp.20140301.11
AMA Style
A.N. Moulai Khatir, A. Guen-Bouazza, B. Bouazza. Corner Effect in Multiplier SOI-Fin FETs. Sci J Circuits Syst Signal Process. 2014;3(1):1-4. doi: 10.11648/j.cssp.20140301.11
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Download@article{10.11648/j.cssp.20140301.11,
author = {A.N. Moulai Khatir and A. Guen-Bouazza and B. Bouazza},
title = {Corner Effect in Multiplier SOI-Fin FETs},
journal = {Science Journal of Circuits, Systems and Signal Processing},
volume = {3},
number = {1},
pages = {1-4},
doi = {10.11648/j.cssp.20140301.11},
url = {https://doi.org/10.11648/j.cssp.20140301.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.cssp.20140301.11},
abstract = {SOI-Multi-FinFET was analyzed by a three-dimensional numerical device simulator and its electrical characteristics and potential distribution in the oxide and the silicon in the section perpendicular to the flow of the current were compared for single-fin, three-fin and five-fin FET to investigate the influence of fins number on corner effect in Dual-gate SOI Multi-FinFET, and we provide a comparison with a Tri-gate SOI Multi-FinFET structure.},
year = {2014}
}
TY - JOUR T1 - Corner Effect in Multiplier SOI-Fin FETs AU - A.N. Moulai Khatir AU - A. Guen-Bouazza AU - B. Bouazza Y1 - 2014/02/20 PY - 2014 N1 - https://doi.org/10.11648/j.cssp.20140301.11 DO - 10.11648/j.cssp.20140301.11 T2 - Science Journal of Circuits, Systems and Signal Processing JF - Science Journal of Circuits, Systems and Signal Processing JO - Science Journal of Circuits, Systems and Signal Processing SP - 1 EP - 4 PB - Science Publishing Group SN - 2326-9073 UR - https://doi.org/10.11648/j.cssp.20140301.11 AB - SOI-Multi-FinFET was analyzed by a three-dimensional numerical device simulator and its electrical characteristics and potential distribution in the oxide and the silicon in the section perpendicular to the flow of the current were compared for single-fin, three-fin and five-fin FET to investigate the influence of fins number on corner effect in Dual-gate SOI Multi-FinFET, and we provide a comparison with a Tri-gate SOI Multi-FinFET structure. VL - 3 IS - 1 ER -
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