American Journal of Materials Synthesis and Processing

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Structural and Dielectric Properties of Lanthanum Doped CaCu3Ti4O12 for Capacitor Application

Received: 24 September 2017    Accepted: 26 October 2017    Published: 15 November 2017
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Abstract

CaCu3Ti4O12 (CCTO) is a novel material with high relative dielectric constant and low loss tangent, CCTO belongs to a family of oxides of the type ACu3Ti4O12 (A=Ca, Cd, Sr, Na, Th). CaCu3Ti4O12 was first reported by Subramanian et al., to have an unusually high dielectric constant (~10,000) at 1 kHz. It is well known that dielectric properties of CCTO are strongly dependent upon the processing conditions as well as on doping. Semi-wet route was used to synthesise samples of CaCu3Ti4O12 and Ca(1-3x/2)LaxCu3Ti4O12 (x=0.01). Analytical grade chemicals, Ca(NO3)2.4H2O, La(NO3)3.6H2O, Cu(NO3)2.3H2O, titanium dioxide and citric acid having purity better than 99.95% were used as starting materials. The formation of single-phase solid solutions was confirmed by the absence characteristic lines of constituent’s oxides in the XRD patterns. Dielectric measurement of undoped and La doped CCTO has been performed using four probe novocontrol set up (ZG4) in a wide range of temperature starting from the room temperature. With La doping in CCTO there is an increase in the value of dielectric constant in comparison to undoped CCTO.

DOI 10.11648/j.ajmsp.20170206.13
Published in American Journal of Materials Synthesis and Processing (Volume 2, Issue 6, November 2017)
Page(s) 90-93
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

CaCu3Ti4O12, XRD, Dielectric Constant, Dielectric Loss

References
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    Anshuman Srivastava, Om Parkash, Devendra Kumar, Pralay Maiti. (2017). Structural and Dielectric Properties of Lanthanum Doped CaCu3Ti4O12 for Capacitor Application. American Journal of Materials Synthesis and Processing, 2(6), 90-93. https://doi.org/10.11648/j.ajmsp.20170206.13

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    ACS Style

    Anshuman Srivastava; Om Parkash; Devendra Kumar; Pralay Maiti. Structural and Dielectric Properties of Lanthanum Doped CaCu3Ti4O12 for Capacitor Application. Am. J. Mater. Synth. Process. 2017, 2(6), 90-93. doi: 10.11648/j.ajmsp.20170206.13

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    AMA Style

    Anshuman Srivastava, Om Parkash, Devendra Kumar, Pralay Maiti. Structural and Dielectric Properties of Lanthanum Doped CaCu3Ti4O12 for Capacitor Application. Am J Mater Synth Process. 2017;2(6):90-93. doi: 10.11648/j.ajmsp.20170206.13

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  • @article{10.11648/j.ajmsp.20170206.13,
      author = {Anshuman Srivastava and Om Parkash and Devendra Kumar and Pralay Maiti},
      title = {Structural and Dielectric Properties of Lanthanum Doped CaCu3Ti4O12 for Capacitor Application},
      journal = {American Journal of Materials Synthesis and Processing},
      volume = {2},
      number = {6},
      pages = {90-93},
      doi = {10.11648/j.ajmsp.20170206.13},
      url = {https://doi.org/10.11648/j.ajmsp.20170206.13},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmsp.20170206.13},
      abstract = {CaCu3Ti4O12 (CCTO) is a novel material with high relative dielectric constant and low loss tangent, CCTO belongs to a family of oxides of the type ACu3Ti4O12 (A=Ca, Cd, Sr, Na, Th). CaCu3Ti4O12 was first reported by Subramanian et al., to have an unusually high dielectric constant (~10,000) at 1 kHz. It is well known that dielectric properties of CCTO are strongly dependent upon the processing conditions as well as on doping. Semi-wet route was used to synthesise samples of CaCu3Ti4O12 and Ca(1-3x/2)LaxCu3Ti4O12 (x=0.01). Analytical grade chemicals, Ca(NO3)2.4H2O, La(NO3)3.6H2O, Cu(NO3)2.3H2O, titanium dioxide and citric acid having purity better than 99.95% were used as starting materials. The formation of single-phase solid solutions was confirmed by the absence characteristic lines of constituent’s oxides in the XRD patterns. Dielectric measurement of undoped and La doped CCTO has been performed using four probe novocontrol set up (ZG4) in a wide range of temperature starting from the room temperature. With La doping in CCTO there is an increase in the value of dielectric constant in comparison to undoped CCTO.},
     year = {2017}
    }
    

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  • TY  - JOUR
    T1  - Structural and Dielectric Properties of Lanthanum Doped CaCu3Ti4O12 for Capacitor Application
    AU  - Anshuman Srivastava
    AU  - Om Parkash
    AU  - Devendra Kumar
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    DO  - 10.11648/j.ajmsp.20170206.13
    T2  - American Journal of Materials Synthesis and Processing
    JF  - American Journal of Materials Synthesis and Processing
    JO  - American Journal of Materials Synthesis and Processing
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    EP  - 93
    PB  - Science Publishing Group
    SN  - 2575-1530
    UR  - https://doi.org/10.11648/j.ajmsp.20170206.13
    AB  - CaCu3Ti4O12 (CCTO) is a novel material with high relative dielectric constant and low loss tangent, CCTO belongs to a family of oxides of the type ACu3Ti4O12 (A=Ca, Cd, Sr, Na, Th). CaCu3Ti4O12 was first reported by Subramanian et al., to have an unusually high dielectric constant (~10,000) at 1 kHz. It is well known that dielectric properties of CCTO are strongly dependent upon the processing conditions as well as on doping. Semi-wet route was used to synthesise samples of CaCu3Ti4O12 and Ca(1-3x/2)LaxCu3Ti4O12 (x=0.01). Analytical grade chemicals, Ca(NO3)2.4H2O, La(NO3)3.6H2O, Cu(NO3)2.3H2O, titanium dioxide and citric acid having purity better than 99.95% were used as starting materials. The formation of single-phase solid solutions was confirmed by the absence characteristic lines of constituent’s oxides in the XRD patterns. Dielectric measurement of undoped and La doped CCTO has been performed using four probe novocontrol set up (ZG4) in a wide range of temperature starting from the room temperature. With La doping in CCTO there is an increase in the value of dielectric constant in comparison to undoped CCTO.
    VL  - 2
    IS  - 6
    ER  - 

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Author Information
  • Mechanical Engineering Department, SIET, Allahabad, India

  • Department of Ceramic Engineering, Indian Institute of Technologym, Banaras Hindu University, Varanasi, India

  • Department of Ceramic Engineering, Indian Institute of Technologym, Banaras Hindu University, Varanasi, India

  • School of Material Science & Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi, India

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