Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process

Chironjeet Chaki; Manoshi Chaki; Keya Roy

doi:doi:10.11648/j.ajmsp.20190401.17

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Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process

Chironjeet Chaki, Manoshi Chaki, Keya Roy

Published in American Journal of Materials Synthesis and Processing (Volume 4, Issue 1)

Received: 30 May 2019 Accepted: 2 July 2019 Published: 15 July 2019

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Abstract

A simplistic simulation technique has been developed for computing the individual intermetallic compound (IMC) thickness which is formed in substrate-solder (Cu-Sn) systems during the diffusion soldering process in high-temperature power electronic applications. The method requires the time-dependent temperature profile for the soldering process and the growth rate parameters (e.g. concentration gradient, diffusion coefficient, activation energy, etc.) for the development of IMC layers as input. The method is suitable for predicting the thickness of an intermetallic phase layer during the diffusion soldering process. As such, it can be used in high-temperature power electronic application’s solder processing to enhance the reliability and lifetime of solder interconnections by allowing the control of the thickness of IMC layers. The method is demonstrated for IMC growth between pure copper as substrate and pure Sn as solder material. The growth behavior of the IMC layer is increased with increasing temperature over time according to the Arrhenius theory in the temperature range between 24°C to 260°C. To simulate the formation of IMC thickness in diffusion soldering interconnections, a simplistic way has been attempted using the popular commercial finite element simulation tool Comsol Multiphysics and scientific computing application ‘Matlab’. By means of transient thermal input, the diffusion-controlled intermetallic phase formation is simulated here. Few assumptions are taken care of this simulation process, for example, no convection, no reaction, solid-solid diffusion, no the pressure effect on the computational domain.

Published in	American Journal of Materials Synthesis and Processing (Volume 4, Issue 1)
DOI	10.11648/j.ajmsp.20190401.17
Page(s)	54-61
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Diffusion Soldering, Finite Element Model, Power Electronic Application, Interconnection Technology

References

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[13]	M. Wizard and G. Definitions, “Introduction to COMSOL Multiphysics,” pp. 1–6, 2014.
[14]	A. Morozov, A. Freidin, W. H. Müller, A. Semencha, and M. Tribunskiy, “Modeling temperature dependent chemical reaction of intermetallic compound growth”, 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2019, pp. 1–8.
[15]	Y. Tang, Q. W. Guo, S. M. Luo, et al., “Formation and growth of interfacial intermetallics in Sn-0.3Ag-0.7Cu-xCeO2/Cu solder joints during the reflow process”, Journal of Alloys and Compounds (Elsevier), vol. 778, pp. 741–755, Mar. 2019.
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APA Style

Chironjeet Chaki, Manoshi Chaki, Keya Roy. (2019). Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process. American Journal of Materials Synthesis and Processing, 4(1), 54-61. https://doi.org/10.11648/j.ajmsp.20190401.17

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ACS Style

Chironjeet Chaki; Manoshi Chaki; Keya Roy. Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process. Am. J. Mater. Synth. Process. 2019, 4(1), 54-61. doi: 10.11648/j.ajmsp.20190401.17

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AMA Style

Chironjeet Chaki, Manoshi Chaki, Keya Roy. Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process. Am J Mater Synth Process. 2019;4(1):54-61. doi: 10.11648/j.ajmsp.20190401.17

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@article{10.11648/j.ajmsp.20190401.17,
  author = {Chironjeet Chaki and Manoshi Chaki and Keya Roy},
  title = {Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process},
  journal = {American Journal of Materials Synthesis and Processing},
  volume = {4},
  number = {1},
  pages = {54-61},
  doi = {10.11648/j.ajmsp.20190401.17},
  url = {https://doi.org/10.11648/j.ajmsp.20190401.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmsp.20190401.17},
  abstract = {A simplistic simulation technique has been developed for computing the individual intermetallic compound (IMC) thickness which is formed in substrate-solder (Cu-Sn) systems during the diffusion soldering process in high-temperature power electronic applications. The method requires the time-dependent temperature profile for the soldering process and the growth rate parameters (e.g. concentration gradient, diffusion coefficient, activation energy, etc.) for the development of IMC layers as input. The method is suitable for predicting the thickness of an intermetallic phase layer during the diffusion soldering process. As such, it can be used in high-temperature power electronic application’s solder processing to enhance the reliability and lifetime of solder interconnections by allowing the control of the thickness of IMC layers. The method is demonstrated for IMC growth between pure copper as substrate and pure Sn as solder material. The growth behavior of the IMC layer is increased with increasing temperature over time according to the Arrhenius theory in the temperature range between 24°C to 260°C. To simulate the formation of IMC thickness in diffusion soldering interconnections, a simplistic way has been attempted using the popular commercial finite element simulation tool Comsol Multiphysics and scientific computing application ‘Matlab’. By means of transient thermal input, the diffusion-controlled intermetallic phase formation is simulated here. Few assumptions are taken care of this simulation process, for example, no convection, no reaction, solid-solid diffusion, no the pressure effect on the computational domain.},
 year = {2019}
}

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TY  - JOUR
T1  - Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process
AU  - Chironjeet Chaki
AU  - Manoshi Chaki
AU  - Keya Roy
Y1  - 2019/07/15
PY  - 2019
N1  - https://doi.org/10.11648/j.ajmsp.20190401.17
DO  - 10.11648/j.ajmsp.20190401.17
T2  - American Journal of Materials Synthesis and Processing
JF  - American Journal of Materials Synthesis and Processing
JO  - American Journal of Materials Synthesis and Processing
SP  - 54
EP  - 61
PB  - Science Publishing Group
SN  - 2575-1530
UR  - https://doi.org/10.11648/j.ajmsp.20190401.17
AB  - A simplistic simulation technique has been developed for computing the individual intermetallic compound (IMC) thickness which is formed in substrate-solder (Cu-Sn) systems during the diffusion soldering process in high-temperature power electronic applications. The method requires the time-dependent temperature profile for the soldering process and the growth rate parameters (e.g. concentration gradient, diffusion coefficient, activation energy, etc.) for the development of IMC layers as input. The method is suitable for predicting the thickness of an intermetallic phase layer during the diffusion soldering process. As such, it can be used in high-temperature power electronic application’s solder processing to enhance the reliability and lifetime of solder interconnections by allowing the control of the thickness of IMC layers. The method is demonstrated for IMC growth between pure copper as substrate and pure Sn as solder material. The growth behavior of the IMC layer is increased with increasing temperature over time according to the Arrhenius theory in the temperature range between 24°C to 260°C. To simulate the formation of IMC thickness in diffusion soldering interconnections, a simplistic way has been attempted using the popular commercial finite element simulation tool Comsol Multiphysics and scientific computing application ‘Matlab’. By means of transient thermal input, the diffusion-controlled intermetallic phase formation is simulated here. Few assumptions are taken care of this simulation process, for example, no convection, no reaction, solid-solid diffusion, no the pressure effect on the computational domain.
VL  - 4
IS  - 1
ER  -

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Author Information

Chironjeet Chaki

Department of Mechanical Engineering, Rajshahi University of Engineering & Technology, Rajshahi, Bangladesh
Manoshi Chaki

Department of Apparel Engineering, Bangladesh University of Textiles, Dhaka, Bangladesh
Keya Roy

Department of Civil Engineering, Rajshahi University of Engineering & Technology, Rajshahi, Bangladesh

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APA Style

Chironjeet Chaki, Manoshi Chaki, Keya Roy. (2019). Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process. American Journal of Materials Synthesis and Processing, 4(1), 54-61. https://doi.org/10.11648/j.ajmsp.20190401.17

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ACS Style

Chironjeet Chaki; Manoshi Chaki; Keya Roy. Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process. Am. J. Mater. Synth. Process. 2019, 4(1), 54-61. doi: 10.11648/j.ajmsp.20190401.17

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AMA Style

Chironjeet Chaki, Manoshi Chaki, Keya Roy. Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process. Am J Mater Synth Process. 2019;4(1):54-61. doi: 10.11648/j.ajmsp.20190401.17

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@article{10.11648/j.ajmsp.20190401.17,
  author = {Chironjeet Chaki and Manoshi Chaki and Keya Roy},
  title = {Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process},
  journal = {American Journal of Materials Synthesis and Processing},
  volume = {4},
  number = {1},
  pages = {54-61},
  doi = {10.11648/j.ajmsp.20190401.17},
  url = {https://doi.org/10.11648/j.ajmsp.20190401.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmsp.20190401.17},
  abstract = {A simplistic simulation technique has been developed for computing the individual intermetallic compound (IMC) thickness which is formed in substrate-solder (Cu-Sn) systems during the diffusion soldering process in high-temperature power electronic applications. The method requires the time-dependent temperature profile for the soldering process and the growth rate parameters (e.g. concentration gradient, diffusion coefficient, activation energy, etc.) for the development of IMC layers as input. The method is suitable for predicting the thickness of an intermetallic phase layer during the diffusion soldering process. As such, it can be used in high-temperature power electronic application’s solder processing to enhance the reliability and lifetime of solder interconnections by allowing the control of the thickness of IMC layers. The method is demonstrated for IMC growth between pure copper as substrate and pure Sn as solder material. The growth behavior of the IMC layer is increased with increasing temperature over time according to the Arrhenius theory in the temperature range between 24°C to 260°C. To simulate the formation of IMC thickness in diffusion soldering interconnections, a simplistic way has been attempted using the popular commercial finite element simulation tool Comsol Multiphysics and scientific computing application ‘Matlab’. By means of transient thermal input, the diffusion-controlled intermetallic phase formation is simulated here. Few assumptions are taken care of this simulation process, for example, no convection, no reaction, solid-solid diffusion, no the pressure effect on the computational domain.},
 year = {2019}
}

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TY  - JOUR
T1  - Development of a Simplistic Method to Simulate the Formation of Intermetallic Compounds in Diffusion Soldering Process
AU  - Chironjeet Chaki
AU  - Manoshi Chaki
AU  - Keya Roy
Y1  - 2019/07/15
PY  - 2019
N1  - https://doi.org/10.11648/j.ajmsp.20190401.17
DO  - 10.11648/j.ajmsp.20190401.17
T2  - American Journal of Materials Synthesis and Processing
JF  - American Journal of Materials Synthesis and Processing
JO  - American Journal of Materials Synthesis and Processing
SP  - 54
EP  - 61
PB  - Science Publishing Group
SN  - 2575-1530
UR  - https://doi.org/10.11648/j.ajmsp.20190401.17
AB  - A simplistic simulation technique has been developed for computing the individual intermetallic compound (IMC) thickness which is formed in substrate-solder (Cu-Sn) systems during the diffusion soldering process in high-temperature power electronic applications. The method requires the time-dependent temperature profile for the soldering process and the growth rate parameters (e.g. concentration gradient, diffusion coefficient, activation energy, etc.) for the development of IMC layers as input. The method is suitable for predicting the thickness of an intermetallic phase layer during the diffusion soldering process. As such, it can be used in high-temperature power electronic application’s solder processing to enhance the reliability and lifetime of solder interconnections by allowing the control of the thickness of IMC layers. The method is demonstrated for IMC growth between pure copper as substrate and pure Sn as solder material. The growth behavior of the IMC layer is increased with increasing temperature over time according to the Arrhenius theory in the temperature range between 24°C to 260°C. To simulate the formation of IMC thickness in diffusion soldering interconnections, a simplistic way has been attempted using the popular commercial finite element simulation tool Comsol Multiphysics and scientific computing application ‘Matlab’. By means of transient thermal input, the diffusion-controlled intermetallic phase formation is simulated here. Few assumptions are taken care of this simulation process, for example, no convection, no reaction, solid-solid diffusion, no the pressure effect on the computational domain.
VL  - 4
IS  - 1
ER  -

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