Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum
International Journal of Energy and Power Engineering
Volume 4, Issue 6, December 2015, Pages: 353-357
Received: Dec. 11, 2015; Published: Dec. 11, 2015
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Authors
Ying Dai, School of Science, Shenyang University of Technology, Shenyang, China
Shanyu Quan, School of Science, Shenyang University of Technology, Shenyang, China
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Abstract
Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.
Keywords
Near-Ultraviolet LEDs, Efficiency Droop, Auger Recombination
To cite this article
Ying Dai, Shanyu Quan, Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum, International Journal of Energy and Power Engineering. Vol. 4, No. 6, 2015, pp. 353-357. doi: 10.11648/j.ijepe.20150406.14
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