An important requirement in the employment of the different existing PV technologies is the understanding of the performance exhibited by each technology, once installed outdoors. Such records are necessary since the outdoor PV electrical characteristics are different from those corresponding to STC (which rarely occurs outdoors) information listed in manufacturer data-sheets. Therefore the PV monitoring and evaluations, under different environmental conditions, are indispensable for the architects and PV systems installers, in order to accurately size the installations. In this paper the influence of temperature on the photovoltaic parameters of amorphous silicon (a-Si) and copper indium diselenide (CIS) thin film modules has been investigated, as well as the energy produced under actual operating conditions. The cur-rent-voltage characteristics and maximum power have been recorded at regular intervals, for one year in the Mediterranean climate city of Patras, Greece (latitude 380). Patras averages over 4.2 peak sun hours (PSH) per day and module working temperatures between 16 0C and 600C. Our results have shown that, the percentage reduction of the open circuit voltage with temperature increase is greater for the CIS than for the a-Si modules. The short circuit current temperature coefficient for the CIS modules is positive at low and medium temperatures, though over the entire range of working temperature remains approximately constant with a slight tendency to reduce. The maximum power decreases almost linearly, while the efficiency for temperatures higher than 50oC reduces sharply. It is remarkable that with respect to the temperature increase the a-Si modules efficiency remains very near to the rated value, and the short circuit current temperature coefficient and the power coefficient are positive. The fill factor for these modules decreases linearly and equally as a function of temperature. The series and parallel resistance for the a-Si decrease slightly with temperature increase, whereas for the CIS the series resistance increases and the parallel resistance decreases in a more pronounced way. Maximum year-round energy production corresponds to the tilt angles of about 20 and 50 degrees in the summer and winter respectively.
| Published in | International Journal of Renewable and Sustainable Energy (Volume 2, Issue 4) |
| DOI | 10.11648/j.ijrse.20130204.12 |
| Page(s) | 140-146 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
Thin Film, Module, A-Si, CIS, Temperature Coefficient, Tilt Angle
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APA Style
V. Perraki, G. Tsolkas. (2013). Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules. International Journal of Sustainable and Green Energy, 2(4), 140-146. https://doi.org/10.11648/j.ijrse.20130204.12
ACS Style
V. Perraki; G. Tsolkas. Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules. Int. J. Sustain. Green Energy 2013, 2(4), 140-146. doi: 10.11648/j.ijrse.20130204.12
AMA Style
V. Perraki, G. Tsolkas. Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules. Int J Sustain Green Energy. 2013;2(4):140-146. doi: 10.11648/j.ijrse.20130204.12
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Download@article{10.11648/j.ijrse.20130204.12,
author = {V. Perraki and G. Tsolkas},
title = {Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules},
journal = {International Journal of Sustainable and Green Energy},
volume = {2},
number = {4},
pages = {140-146},
doi = {10.11648/j.ijrse.20130204.12},
url = {https://doi.org/10.11648/j.ijrse.20130204.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijrse.20130204.12},
abstract = {An important requirement in the employment of the different existing PV technologies is the understanding of the performance exhibited by each technology, once installed outdoors. Such records are necessary since the outdoor PV electrical characteristics are different from those corresponding to STC (which rarely occurs outdoors) information listed in manufacturer data-sheets. Therefore the PV monitoring and evaluations, under different environmental conditions, are indispensable for the architects and PV systems installers, in order to accurately size the installations. In this paper the influence of temperature on the photovoltaic parameters of amorphous silicon (a-Si) and copper indium diselenide (CIS) thin film modules has been investigated, as well as the energy produced under actual operating conditions. The cur-rent-voltage characteristics and maximum power have been recorded at regular intervals, for one year in the Mediterranean climate city of Patras, Greece (latitude 380). Patras averages over 4.2 peak sun hours (PSH) per day and module working temperatures between 16 0C and 600C. Our results have shown that, the percentage reduction of the open circuit voltage with temperature increase is greater for the CIS than for the a-Si modules. The short circuit current temperature coefficient for the CIS modules is positive at low and medium temperatures, though over the entire range of working temperature remains approximately constant with a slight tendency to reduce. The maximum power decreases almost linearly, while the efficiency for temperatures higher than 50oC reduces sharply. It is remarkable that with respect to the temperature increase the a-Si modules efficiency remains very near to the rated value, and the short circuit current temperature coefficient and the power coefficient are positive. The fill factor for these modules decreases linearly and equally as a function of temperature. The series and parallel resistance for the a-Si decrease slightly with temperature increase, whereas for the CIS the series resistance increases and the parallel resistance decreases in a more pronounced way. Maximum year-round energy production corresponds to the tilt angles of about 20 and 50 degrees in the summer and winter respectively.},
year = {2013}
}
TY - JOUR T1 - Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules AU - V. Perraki AU - G. Tsolkas Y1 - 2013/07/10 PY - 2013 N1 - https://doi.org/10.11648/j.ijrse.20130204.12 DO - 10.11648/j.ijrse.20130204.12 T2 - International Journal of Sustainable and Green Energy JF - International Journal of Sustainable and Green Energy JO - International Journal of Sustainable and Green Energy SP - 140 EP - 146 PB - Science Publishing Group SN - 2575-1549 UR - https://doi.org/10.11648/j.ijrse.20130204.12 AB - An important requirement in the employment of the different existing PV technologies is the understanding of the performance exhibited by each technology, once installed outdoors. Such records are necessary since the outdoor PV electrical characteristics are different from those corresponding to STC (which rarely occurs outdoors) information listed in manufacturer data-sheets. Therefore the PV monitoring and evaluations, under different environmental conditions, are indispensable for the architects and PV systems installers, in order to accurately size the installations. In this paper the influence of temperature on the photovoltaic parameters of amorphous silicon (a-Si) and copper indium diselenide (CIS) thin film modules has been investigated, as well as the energy produced under actual operating conditions. The cur-rent-voltage characteristics and maximum power have been recorded at regular intervals, for one year in the Mediterranean climate city of Patras, Greece (latitude 380). Patras averages over 4.2 peak sun hours (PSH) per day and module working temperatures between 16 0C and 600C. Our results have shown that, the percentage reduction of the open circuit voltage with temperature increase is greater for the CIS than for the a-Si modules. The short circuit current temperature coefficient for the CIS modules is positive at low and medium temperatures, though over the entire range of working temperature remains approximately constant with a slight tendency to reduce. The maximum power decreases almost linearly, while the efficiency for temperatures higher than 50oC reduces sharply. It is remarkable that with respect to the temperature increase the a-Si modules efficiency remains very near to the rated value, and the short circuit current temperature coefficient and the power coefficient are positive. The fill factor for these modules decreases linearly and equally as a function of temperature. The series and parallel resistance for the a-Si decrease slightly with temperature increase, whereas for the CIS the series resistance increases and the parallel resistance decreases in a more pronounced way. Maximum year-round energy production corresponds to the tilt angles of about 20 and 50 degrees in the summer and winter respectively. VL - 2 IS - 4 ER -
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