Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates
Volume 3, Issue 6, December 2015, Pages: 300-303
Received: Oct. 21, 2015;
Accepted: Oct. 27, 2015;
Published: Nov. 13, 2015
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Hla Myo Tun, Department of Electronic Engineering, Mandalay Technological University, Mandalay Region, Republic of the Union of Myanmar
Thant Zin Win, Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Kensuke Minami, Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan
Satomi Teraya, Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan
Koushi Okita, Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan
Yusui Nakamura, Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan; Kumamoto Institute for Photo-Electro Organics, Kumamoto, Japan
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ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.
Film Formation, Characterization, Mist-CVD, ZnO, LED
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Hla Myo Tun,
Thant Zin Win,
Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates, Science Research.
Vol. 3, No. 6,
2015, pp. 300-303.
Copyright © 2015 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/
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