Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline
Science Research
Volume 4, Issue 1, February 2016, Pages: 21-25
Received: Dec. 31, 2015; Accepted: Jan. 8, 2016; Published: Feb. 25, 2016
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Authors
Ousmane Ba, Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Nacire Mbengue, Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Fatou Dia, Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Alassane Diaw, Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Mamadou Moustapha Diop, Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Bassirou Ba, Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Fabé Idrissa Barro, Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
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Abstract
These days solar cells layers are increasingly used primarily because of their low cost. During the last decades the performance of these cells were clearly improved. In the present work, a comparative study of two photovoltaic materials that are gallium arsenic and silicon. This allowed us to define the most efficient photovoltaic material. We have used for this purpose a method of adequate global search optimization for the search for optimal performance based on structural parameters (doping and thickness) of solar cells. This optimization method has allowed us to obtain a return of 26.15% for a solar cell based on GaAs and 18.15% for a solar cell based on Si, we were interested as to show the influence of the depth of penetration of light photons on the solar cells based on Si and GaAs which showed that the variation of the current density and more importantly on the deposit Arsenide Gallium 45.3 A / cm2.
Keywords
Solar Cells, GaAs, Si, Anti-Reflective Coating, Optimization, Performance
To cite this article
Ousmane Ba, Nacire Mbengue, Fatou Dia, Alassane Diaw, Mamadou Moustapha Diop, Bassirou Ba, Fabé Idrissa Barro, Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline, Science Research. Vol. 4, No. 1, 2016, pp. 21-25. doi: 10.11648/j.sr.20160401.14
Copyright
Copyright © 2016 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
References
[1]
Aiken, D. J. (2000a). Antireflection coating design for series interconnected multi-junction solar cells. Progress in Photovoltaic: Research and Applications, volume 8, numéro 6, p. 563-570.
[2]
J. J. Liou and W. W. Wong, "Comparison and optimization of the performance of Si and GaAs solar cells", Solar Energy Mater. Solar Cells, 28(1992), pp. 9-28.
[3]
Bai Yiming, Chen Nuofu, Dai Ruixuan, et al. Dispersion effect on double-layer antireflection coatings of GaAs solar cells. Chinese Journal of Semi-conductors, 2006, 27(4): 725 (in Chinese).
[4]
J.-F. Lelièvre, E. Fourmond, A Kaminski, et al., Solar Energy Material & Solar Cells vol. 93 (2009), 1281-1289.
[5]
Jaouad, A. et Aimez, V. (2006). Passivation of air-exposed AlGaAs using low frequency plasma-enhanced chemical vapor deposition of silicon nitride. Applied Physics Letters, volume 89, numéro 9, p. 092125.
[6]
H. E. Elgamel and M. Allen Barnett, ‘Efficient Combination of Surface and Bulk Passivation Schemes of High-efficiency Multicrystalline Silicon Solar Cells’, J. Appl. Phys. 78, 5, pp. 3457-3461, 1995.
[7]
Jaouad, A., Aimez, V. et Aktik, C. (2004). GaAs passivation by low-frequency plasma enhanced chemical vapour deposition of silicon nitride. Electronics Letters, volume 40, numéro 16, p. 1024-1026.
[8]
S. C. Tsaur et al., "Theoretical and experimental results for GaAs solar cells", in proceedings of the fourth international symposium on GaAs and related compounds, conference series N°17, The Institute of Physics, London, U. K.,(2009), pp. 156.
[9]
G. Santana and A. Morales-Acevedo, Solar Energy Materials & Solar Cells 60 (2000) 135.
[10]
G Santana and A. Morales-Acevedo. Optimization of pecvd SiNx H films for silicon solar cells. Solar Energy Materials and Solar Cells, pages 135–142, 2000.
[11]
H. Mäckel, R Lüdeman. ”Detailed study of the composition of hydrogenated SiNx layers for high-quality silicon surface passivation”, Journal of Applied physics, 92(5), 2002, pp. 2602-2609.
[12]
M. I. Alayo, I. Pereyra, W. L. Scopel, M. C. A. Fanitini, “On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapour deposition (PECVD) SiOxNy films”, Thin Solid Films, 402, 2002, pp. 254-161.
[13]
J. J. Liou, “Physical Models for Predicting the Performances of Si/Si, AlGaAs/GaAs and Si/SiGe Solar Cells,” Solar Energy Materials and Solar Cells, vol. 29, no. 3, (2009), pp. 261-276.
[14]
Sadek Khellaf and Abdelhamid Ounissi “Optimizing the Efficiency of Solar Cells based on GaAs University Center of Bechar, Algeria vol. 69, no. 2-3, (2005), pp. 57-63.
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