Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash
Science Discovery
Volume 8, Issue 4, August 2020, Pages: 69-73
Received: Aug. 20, 2020; Published: Aug. 25, 2020
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Authors
Zhao Long, Beijing Institute of Aerospace Control Devices, Beijing, China
Shen Xiaohe, Beijing Institute of Aerospace Control Devices, Beijing, China
Chen Geng, Beijing Institute of Aerospace Control Devices, Beijing, China
Hu Xiaoxi, Beijing Institute of Aerospace Control Devices, Beijing, China
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Abstract
NAND-flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data and is often used as an online storage device for embedded products. However, NAND-flash has the problems of bad blocks and other insufficient reliability.In a certain aerospace model temperature/strain measurement system, the NAND-flash memory is erased and written through DSP software, and the strain/temperature measurement data collected by the sensor is stored in real time. After the system was powered on many times and completed data collection and decoding, it was found that the data stored in the NAND-flash had abnormal faults. By analyzing the test phenomenon and failure mechanism, the failure problem is attributed to the fact that the data in the NAND-flash is not erased, and it is coupled with the newly written data, and it is finally located because the data in the original data address cannot be effectively erased when the data address is stored. Coupling also occurred, resulting in an error in the data address, and the data was coupled after power-on again. Based on the above-mentioned reasons, this paper proposed a troubleshooting method and conducted a test. The verification was successfully passed and the problem was resolved.This method has high reference significance in the large-capacity and high-reliability data storage of NAND-flash in the field of aerospace models.
Keywords
NAND-flash, Data Exception, Fault Analysis
To cite this article
Zhao Long, Shen Xiaohe, Chen Geng, Hu Xiaoxi, Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash, Science Discovery. Vol. 8, No. 4, 2020, pp. 69-73. doi: 10.11648/j.sd.20200804.12
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