Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics
American Journal of Bioscience and Bioengineering
Volume 3, Issue 3-1, June 2015, Pages: 7-13
Received: Mar. 3, 2015; Accepted: Mar. 3, 2015; Published: Mar. 12, 2015
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Cristian Ravariu, Dept. of Electron Devices, Faculty of Electronics, Polytechnic University of Bucharest, BioNEC Group, Bucharest, Romania
Daniela Dragomirescu, CNRS LAAS, UPS, INSA, INP, ISAE, University of Toulouse, 7 avenue du colonel Roche, Toulouse, France
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This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.
Organic Transistors, Simulations, Bioelectronics
To cite this article
Cristian Ravariu, Daniela Dragomirescu, Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics, American Journal of Bioscience and Bioengineering. Special Issue:Bio-Electronics: Biosensors, Biomedical Signal Processing, and Organic Engineering. Vol. 3, No. 3-1, 2015, pp. 7-13. doi: 10.11648/j.bio.s.2015030301.12
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