American Journal of Bioscience and Bioengineering

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Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics

Received: 03 March 2015    Accepted: 03 March 2015    Published: 12 March 2015
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Abstract

This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.

DOI 10.11648/j.bio.s.2015030301.12
Published in American Journal of Bioscience and Bioengineering (Volume 3, Issue 3-1, June 2015)

This article belongs to the Special Issue Bio-Electronics: Biosensors, Biomedical Signal Processing, and Organic Engineering

Page(s) 7-13
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Organic Transistors, Simulations, Bioelectronics

References
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Author Information
  • Dept. of Electron Devices, Faculty of Electronics, Polytechnic University of Bucharest, BioNEC Group, Bucharest, Romania

  • CNRS LAAS, UPS, INSA, INP, ISAE, University of Toulouse, 7 avenue du colonel Roche, Toulouse, France

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  • APA Style

    Cristian Ravariu, Daniela Dragomirescu. (2015). Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. American Journal of Bioscience and Bioengineering, 3(3-1), 7-13. https://doi.org/10.11648/j.bio.s.2015030301.12

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    ACS Style

    Cristian Ravariu; Daniela Dragomirescu. Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. Am. J. BioSci. Bioeng. 2015, 3(3-1), 7-13. doi: 10.11648/j.bio.s.2015030301.12

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    AMA Style

    Cristian Ravariu, Daniela Dragomirescu. Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. Am J BioSci Bioeng. 2015;3(3-1):7-13. doi: 10.11648/j.bio.s.2015030301.12

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  • @article{10.11648/j.bio.s.2015030301.12,
      author = {Cristian Ravariu and Daniela Dragomirescu},
      title = {Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics},
      journal = {American Journal of Bioscience and Bioengineering},
      volume = {3},
      number = {3-1},
      pages = {7-13},
      doi = {10.11648/j.bio.s.2015030301.12},
      url = {https://doi.org/10.11648/j.bio.s.2015030301.12},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.bio.s.2015030301.12},
      abstract = {This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.},
     year = {2015}
    }
    

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  • TY  - JOUR
    T1  - Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics
    AU  - Cristian Ravariu
    AU  - Daniela Dragomirescu
    Y1  - 2015/03/12
    PY  - 2015
    N1  - https://doi.org/10.11648/j.bio.s.2015030301.12
    DO  - 10.11648/j.bio.s.2015030301.12
    T2  - American Journal of Bioscience and Bioengineering
    JF  - American Journal of Bioscience and Bioengineering
    JO  - American Journal of Bioscience and Bioengineering
    SP  - 7
    EP  - 13
    PB  - Science Publishing Group
    SN  - 2328-5893
    UR  - https://doi.org/10.11648/j.bio.s.2015030301.12
    AB  - This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.
    VL  - 3
    IS  - 3-1
    ER  - 

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