American Journal of Nano Research and Applications

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Phonon Scatterings in the Lattice Thermal Conductivity of Si_(1-x) Ge_x Alloy Nanowires: Theoretical Study

Received: 14 February 2014    Accepted:     Published: 20 March 2014
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Abstract

Theoretical investigation of the alloy concentration and temperature dependences of the lattice thermal conductivity of silicon-germanium nanowires is performed using the Steigmeier and Abeles model. Phonon scattering processes are represented by frequency-dependent relaxation time approximation. In addition to the commonly considered acoustic three-phonon umklapp processes, phonon-boundary and point-defect scattering mechanisms are assumed. No distinction is made between longitudinal and transverse phonons. The importance of all the mechanisms involved in the model is clearly demonstrated. Analysis of the results shows that: (1) alloy scattering is the dominant scattering mechanism at intermediate and high temperatures; (2) thermal conductivity is mainly depends on the alloy concentration across the full range of temperatures; (3) weak diameter dependence of thermal conductivity is observed in Si_(1-x) Ge_x alloy nanowires; (4) the roughness of nanowires depends on the alloy concentration and has a major role in decreasing thermal conductivity at low temperatures; (5) the anharmonicity parameter is not size-dependent, as compared to Si and Ge nanowires. These findings provide new insights into the fundamental understanding of high-performance nanostructural semiconductors of relevance to optoelectronic and thermoelectric devices.

DOI 10.11648/j.nano.20140202.12
Published in American Journal of Nano Research and Applications (Volume 2, Issue 2, March 2014)
Page(s) 21-27
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

SiGe Alloy, Lattice Thermal Conductivity, Phonon Scattering, Nanowires

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Author Information
  • Department of Physics, Faculty of Science and Science Education, University of Sulaimani, Sulaimanyah, Iraqi Kurdistan, Iraq

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    Soran Mohammed Mamand. (2014). Phonon Scatterings in the Lattice Thermal Conductivity of Si_(1-x) Ge_x Alloy Nanowires: Theoretical Study. American Journal of Nano Research and Applications, 2(2), 21-27. https://doi.org/10.11648/j.nano.20140202.12

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    Soran Mohammed Mamand. Phonon Scatterings in the Lattice Thermal Conductivity of Si_(1-x) Ge_x Alloy Nanowires: Theoretical Study. Am. J. Nano Res. Appl. 2014, 2(2), 21-27. doi: 10.11648/j.nano.20140202.12

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    AMA Style

    Soran Mohammed Mamand. Phonon Scatterings in the Lattice Thermal Conductivity of Si_(1-x) Ge_x Alloy Nanowires: Theoretical Study. Am J Nano Res Appl. 2014;2(2):21-27. doi: 10.11648/j.nano.20140202.12

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  • @article{10.11648/j.nano.20140202.12,
      author = {Soran Mohammed Mamand},
      title = {Phonon Scatterings in the Lattice Thermal Conductivity of Si_(1-x) Ge_x Alloy Nanowires: Theoretical Study},
      journal = {American Journal of Nano Research and Applications},
      volume = {2},
      number = {2},
      pages = {21-27},
      doi = {10.11648/j.nano.20140202.12},
      url = {https://doi.org/10.11648/j.nano.20140202.12},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.nano.20140202.12},
      abstract = {Theoretical investigation of the alloy concentration and temperature dependences of the lattice thermal conductivity of silicon-germanium nanowires is performed using the Steigmeier and Abeles model. Phonon scattering processes are represented by frequency-dependent relaxation time approximation. In addition to the commonly considered acoustic three-phonon umklapp processes, phonon-boundary and point-defect scattering mechanisms are assumed. No distinction is made between longitudinal and transverse phonons. The importance of all the mechanisms involved in the model is clearly demonstrated. Analysis of the results shows that: (1) alloy scattering is the dominant scattering mechanism at intermediate and high temperatures; (2) thermal conductivity is mainly depends on the alloy concentration across the full range of temperatures; (3) weak diameter dependence of thermal conductivity is observed in Si_(1-x) Ge_x alloy nanowires; (4) the roughness of nanowires depends on the alloy concentration and has a major role in decreasing thermal conductivity at low temperatures; (5) the anharmonicity parameter is not size-dependent, as compared to Si and Ge nanowires. These findings provide new insights into the fundamental understanding of high-performance nanostructural semiconductors of relevance to optoelectronic and thermoelectric devices.},
     year = {2014}
    }
    

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  • TY  - JOUR
    T1  - Phonon Scatterings in the Lattice Thermal Conductivity of Si_(1-x) Ge_x Alloy Nanowires: Theoretical Study
    AU  - Soran Mohammed Mamand
    Y1  - 2014/03/20
    PY  - 2014
    N1  - https://doi.org/10.11648/j.nano.20140202.12
    DO  - 10.11648/j.nano.20140202.12
    T2  - American Journal of Nano Research and Applications
    JF  - American Journal of Nano Research and Applications
    JO  - American Journal of Nano Research and Applications
    SP  - 21
    EP  - 27
    PB  - Science Publishing Group
    SN  - 2575-3738
    UR  - https://doi.org/10.11648/j.nano.20140202.12
    AB  - Theoretical investigation of the alloy concentration and temperature dependences of the lattice thermal conductivity of silicon-germanium nanowires is performed using the Steigmeier and Abeles model. Phonon scattering processes are represented by frequency-dependent relaxation time approximation. In addition to the commonly considered acoustic three-phonon umklapp processes, phonon-boundary and point-defect scattering mechanisms are assumed. No distinction is made between longitudinal and transverse phonons. The importance of all the mechanisms involved in the model is clearly demonstrated. Analysis of the results shows that: (1) alloy scattering is the dominant scattering mechanism at intermediate and high temperatures; (2) thermal conductivity is mainly depends on the alloy concentration across the full range of temperatures; (3) weak diameter dependence of thermal conductivity is observed in Si_(1-x) Ge_x alloy nanowires; (4) the roughness of nanowires depends on the alloy concentration and has a major role in decreasing thermal conductivity at low temperatures; (5) the anharmonicity parameter is not size-dependent, as compared to Si and Ge nanowires. These findings provide new insights into the fundamental understanding of high-performance nanostructural semiconductors of relevance to optoelectronic and thermoelectric devices.
    VL  - 2
    IS  - 2
    ER  - 

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