Studies on the Influence of Growth Time on the Rutile TiO<sub>2</sub> Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode

Abbas M. Selman

doi:doi:10.11648/j.nano.20160403.11

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Studies on the Influence of Growth Time on the Rutile TiO₂ Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode

Abbas M. Selman

Published in American Journal of Nano Research and Applications (Volume 4, Issue 3)

Received: 23 October 2016 Accepted: 8 November 2016 Published: 10 January 2017

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Abstract

In this study, the effect of duration on the growth of rutile TiO₂ nanostructures (Ns) deposited onto the p-Si (111) substrate on the structural, morphological, and optical properties of rutile TiO₂ Ns has been investigated. All Si substrates were seeded with a TiO₂ seed layer synthesized using a radio-frequency (RF) reactive magnetron sputtering system. Chemical bath deposition method (CBD) was employed to grow rutile TiO₂ Ns on seeded Si substrates at duration time of growth (1, 2, 3, and 4 h). X-ray diffraction, Raman spectroscopy,and field-emission scanning electron microscopy (FESEM) analyses demonstrated the tetragonal rutile structure of the synthesized TiO₂ Ns with the highest (110) peak intensity. Optical properties were investigatedby using photoluminescence (PL) spectroscopy of the grown rutile Ns, with the spectra exhibiting the sharpest (smallest FWHMs) and highest peak revealed the high quality of TiO₂ Ns with few defects was found for the sample prepared for 3 h, which reflects the crystalline quality. These results show that the optimized growth conditions yield very high quality TiO₂ Ns on p-type (111)-oriented silicon substrates. A fast-response p-n heterojunction photodiode was fabricated by depositing Al contacts on the front of the optimal sample via RF reactive magnetron sputtering. Upon illumination of a pulsed UV light (325 nm, 1.6 mW/cm²) at 5 V bias voltage, the device showed 3.8 × 10² sensitivity, the photoresponse peak was 460 mA/W, the response and recovery times were 50.8 and 57.8 ms, respectively.

Published in	American Journal of Nano Research and Applications (Volume 4, Issue 3)
DOI	10.11648/j.nano.20160403.11
Page(s)	23-32
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Titanium Dioxide, Rutile Nanostructures, Chemical Bath Deposition, Growthtime, Photodiode

References

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Abbas M. Selman. (2017). Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode. American Journal of Nano Research and Applications, 4(3), 23-32. https://doi.org/10.11648/j.nano.20160403.11

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Abbas M. Selman. Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode. Am. J. Nano Res. Appl. 2017, 4(3), 23-32. doi: 10.11648/j.nano.20160403.11

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AMA Style

Abbas M. Selman. Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode. Am J Nano Res Appl. 2017;4(3):23-32. doi: 10.11648/j.nano.20160403.11

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@article{10.11648/j.nano.20160403.11,
  author = {Abbas M. Selman},
  title = {Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode},
  journal = {American Journal of Nano Research and Applications},
  volume = {4},
  number = {3},
  pages = {23-32},
  doi = {10.11648/j.nano.20160403.11},
  url = {https://doi.org/10.11648/j.nano.20160403.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20160403.11},
  abstract = {In this study, the effect of duration on the growth of rutile TiO2 nanostructures (Ns) deposited onto the p-Si (111) substrate on the structural, morphological, and optical properties of rutile TiO2 Ns has been investigated. All Si substrates were seeded with a TiO2 seed layer synthesized using a radio-frequency (RF) reactive magnetron sputtering system. Chemical bath deposition method (CBD) was employed to grow rutile TiO2 Ns on seeded Si substrates at duration time of growth (1, 2, 3, and 4 h). X-ray diffraction, Raman spectroscopy,and field-emission scanning electron microscopy (FESEM) analyses demonstrated the tetragonal rutile structure of the synthesized TiO2 Ns with the highest (110) peak intensity. Optical properties were investigatedby using photoluminescence (PL) spectroscopy of the grown rutile Ns, with the spectra exhibiting the sharpest (smallest FWHMs) and highest peak revealed the high quality of TiO2 Ns with few defects was found for the sample prepared for 3 h, which reflects the crystalline quality. These results show that the optimized growth conditions yield very high quality TiO2 Ns on p-type (111)-oriented silicon substrates. A fast-response p-n heterojunction photodiode was fabricated by depositing Al contacts on the front of the optimal sample via RF reactive magnetron sputtering. Upon illumination of a pulsed UV light (325 nm, 1.6 mW/cm2) at 5 V bias voltage, the device showed 3.8 × 102 sensitivity, the photoresponse peak was 460 mA/W, the response and recovery times were 50.8 and 57.8 ms, respectively.},
 year = {2017}
}

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TY  - JOUR
T1  - Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode
AU  - Abbas M. Selman
Y1  - 2017/01/10
PY  - 2017
N1  - https://doi.org/10.11648/j.nano.20160403.11
DO  - 10.11648/j.nano.20160403.11
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 23
EP  - 32
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20160403.11
AB  - In this study, the effect of duration on the growth of rutile TiO2 nanostructures (Ns) deposited onto the p-Si (111) substrate on the structural, morphological, and optical properties of rutile TiO2 Ns has been investigated. All Si substrates were seeded with a TiO2 seed layer synthesized using a radio-frequency (RF) reactive magnetron sputtering system. Chemical bath deposition method (CBD) was employed to grow rutile TiO2 Ns on seeded Si substrates at duration time of growth (1, 2, 3, and 4 h). X-ray diffraction, Raman spectroscopy,and field-emission scanning electron microscopy (FESEM) analyses demonstrated the tetragonal rutile structure of the synthesized TiO2 Ns with the highest (110) peak intensity. Optical properties were investigatedby using photoluminescence (PL) spectroscopy of the grown rutile Ns, with the spectra exhibiting the sharpest (smallest FWHMs) and highest peak revealed the high quality of TiO2 Ns with few defects was found for the sample prepared for 3 h, which reflects the crystalline quality. These results show that the optimized growth conditions yield very high quality TiO2 Ns on p-type (111)-oriented silicon substrates. A fast-response p-n heterojunction photodiode was fabricated by depositing Al contacts on the front of the optimal sample via RF reactive magnetron sputtering. Upon illumination of a pulsed UV light (325 nm, 1.6 mW/cm2) at 5 V bias voltage, the device showed 3.8 × 102 sensitivity, the photoresponse peak was 460 mA/W, the response and recovery times were 50.8 and 57.8 ms, respectively.
VL  - 4
IS  - 3
ER  -

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Abbas M. Selman

Department of Pharmacognosy and Medicinal Plants, Faculty of Pharmacy, University of Kufa, Najaf, Iraq; Institute of Nano Optoelectronic Research and Technology (INOR), UniversitiSains Malaysia, Penang, Malaysia

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Abbas M. Selman. (2017). Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode. American Journal of Nano Research and Applications, 4(3), 23-32. https://doi.org/10.11648/j.nano.20160403.11

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Abbas M. Selman. Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode. Am. J. Nano Res. Appl. 2017, 4(3), 23-32. doi: 10.11648/j.nano.20160403.11

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AMA Style

Abbas M. Selman. Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode. Am J Nano Res Appl. 2017;4(3):23-32. doi: 10.11648/j.nano.20160403.11

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@article{10.11648/j.nano.20160403.11,
  author = {Abbas M. Selman},
  title = {Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode},
  journal = {American Journal of Nano Research and Applications},
  volume = {4},
  number = {3},
  pages = {23-32},
  doi = {10.11648/j.nano.20160403.11},
  url = {https://doi.org/10.11648/j.nano.20160403.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20160403.11},
  abstract = {In this study, the effect of duration on the growth of rutile TiO2 nanostructures (Ns) deposited onto the p-Si (111) substrate on the structural, morphological, and optical properties of rutile TiO2 Ns has been investigated. All Si substrates were seeded with a TiO2 seed layer synthesized using a radio-frequency (RF) reactive magnetron sputtering system. Chemical bath deposition method (CBD) was employed to grow rutile TiO2 Ns on seeded Si substrates at duration time of growth (1, 2, 3, and 4 h). X-ray diffraction, Raman spectroscopy,and field-emission scanning electron microscopy (FESEM) analyses demonstrated the tetragonal rutile structure of the synthesized TiO2 Ns with the highest (110) peak intensity. Optical properties were investigatedby using photoluminescence (PL) spectroscopy of the grown rutile Ns, with the spectra exhibiting the sharpest (smallest FWHMs) and highest peak revealed the high quality of TiO2 Ns with few defects was found for the sample prepared for 3 h, which reflects the crystalline quality. These results show that the optimized growth conditions yield very high quality TiO2 Ns on p-type (111)-oriented silicon substrates. A fast-response p-n heterojunction photodiode was fabricated by depositing Al contacts on the front of the optimal sample via RF reactive magnetron sputtering. Upon illumination of a pulsed UV light (325 nm, 1.6 mW/cm2) at 5 V bias voltage, the device showed 3.8 × 102 sensitivity, the photoresponse peak was 460 mA/W, the response and recovery times were 50.8 and 57.8 ms, respectively.},
 year = {2017}
}

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TY  - JOUR
T1  - Studies on the Influence of Growth Time on the Rutile TiO2 Nanostructures Prepared on Si Substrates with Fabricated High-Sensitivity and Fast-Response p-n Heterojunction Photodiode
AU  - Abbas M. Selman
Y1  - 2017/01/10
PY  - 2017
N1  - https://doi.org/10.11648/j.nano.20160403.11
DO  - 10.11648/j.nano.20160403.11
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 23
EP  - 32
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20160403.11
AB  - In this study, the effect of duration on the growth of rutile TiO2 nanostructures (Ns) deposited onto the p-Si (111) substrate on the structural, morphological, and optical properties of rutile TiO2 Ns has been investigated. All Si substrates were seeded with a TiO2 seed layer synthesized using a radio-frequency (RF) reactive magnetron sputtering system. Chemical bath deposition method (CBD) was employed to grow rutile TiO2 Ns on seeded Si substrates at duration time of growth (1, 2, 3, and 4 h). X-ray diffraction, Raman spectroscopy,and field-emission scanning electron microscopy (FESEM) analyses demonstrated the tetragonal rutile structure of the synthesized TiO2 Ns with the highest (110) peak intensity. Optical properties were investigatedby using photoluminescence (PL) spectroscopy of the grown rutile Ns, with the spectra exhibiting the sharpest (smallest FWHMs) and highest peak revealed the high quality of TiO2 Ns with few defects was found for the sample prepared for 3 h, which reflects the crystalline quality. These results show that the optimized growth conditions yield very high quality TiO2 Ns on p-type (111)-oriented silicon substrates. A fast-response p-n heterojunction photodiode was fabricated by depositing Al contacts on the front of the optimal sample via RF reactive magnetron sputtering. Upon illumination of a pulsed UV light (325 nm, 1.6 mW/cm2) at 5 V bias voltage, the device showed 3.8 × 102 sensitivity, the photoresponse peak was 460 mA/W, the response and recovery times were 50.8 and 57.8 ms, respectively.
VL  - 4
IS  - 3
ER  -

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