Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers
American Journal of Nano Research and Applications
Volume 6, Issue 1, March 2018, Pages: 11-20
Received: Jan. 8, 2018;
Accepted: Jan. 20, 2018;
Published: Mar. 7, 2018
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Martin Hofmann, Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany
Cemal Aydogan, Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany; Department of Electronics and Cryptology, TUBITAK - YITAL, Kocaeli, Turkey
Claudia Lenk, Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany
Yana Krivoshapkina, Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany
Steve Lenk, Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany
Burkhard Volland, Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany
Marcus Kaestner, Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany
Burhanettin Erdem Alaca, Department of Mechanical Engineering, Koc University, Istanbul, Turkey
Eberhard Manske, Department of Process Measurement and Sensor Technology, Ilmenau University of Technology, Ilmenau, Germany
Ivo Rangelow, Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany
High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask- and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.
Burhanettin Erdem Alaca,
Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers, American Journal of Nano Research and Applications.
Vol. 6, No. 1,
2018, pp. 11-20.
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