The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.
| Published in |
American Journal of Nano Research and Applications (Volume 5, Issue 3-1)
This article belongs to the Special Issue Nanotechnologies |
| DOI | 10.11648/j.nano.s.2017050301.21 |
| Page(s) | 48-55 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2024. Published by Science Publishing Group |
Nanosize Clusters, Radiation, Semiconductors
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APA Style
Nodar Kekelidze, Elza Khutsishvili, Zaur Kvinikadze, Zinaida Davitaja, David Kekelidze, et al. (2017). Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. American Journal of Nano Research and Applications, 5(3-1), 48-55. https://doi.org/10.11648/j.nano.s.2017050301.21
ACS Style
Nodar Kekelidze; Elza Khutsishvili; Zaur Kvinikadze; Zinaida Davitaja; David Kekelidze, et al. Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. Am. J. Nano Res. Appl. 2017, 5(3-1), 48-55. doi: 10.11648/j.nano.s.2017050301.21
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Download@article{10.11648/j.nano.s.2017050301.21,
author = {Nodar Kekelidze and Elza Khutsishvili and Zaur Kvinikadze and Zinaida Davitaja and David Kekelidze and Bela Kvirkvelia and Ketevan Sadradze and Lali Nadiradze and George Kekelidze},
title = {Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x},
journal = {American Journal of Nano Research and Applications},
volume = {5},
number = {3-1},
pages = {48-55},
doi = {10.11648/j.nano.s.2017050301.21},
url = {https://doi.org/10.11648/j.nano.s.2017050301.21},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.s.2017050301.21},
abstract = {The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.},
year = {2017}
}
TY - JOUR T1 - Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x AU - Nodar Kekelidze AU - Elza Khutsishvili AU - Zaur Kvinikadze AU - Zinaida Davitaja AU - David Kekelidze AU - Bela Kvirkvelia AU - Ketevan Sadradze AU - Lali Nadiradze AU - George Kekelidze Y1 - 2017/02/28 PY - 2017 N1 - https://doi.org/10.11648/j.nano.s.2017050301.21 DO - 10.11648/j.nano.s.2017050301.21 T2 - American Journal of Nano Research and Applications JF - American Journal of Nano Research and Applications JO - American Journal of Nano Research and Applications SP - 48 EP - 55 PB - Science Publishing Group SN - 2575-3738 UR - https://doi.org/10.11648/j.nano.s.2017050301.21 AB - The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation. VL - 5 IS - 3-1 ER -
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